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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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Room-temperature persistent spectral hole burning in SrFCl:Sm2+ films: Temporal and spatial response

M. Schnieper, F. Trotta, S. Bersier, and H. Bill

Appl. Phys. Lett. 75, 40 (1999); http://dx.doi.org/10.1063/1.124270 (3 pages) | Cited 4 times

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Persistent spectral hole burning was performed on the 7F0–5D1 transition of Sm2+ in thin films of SrFCl. Depending on the substrate and the growth conditions, a total hole depth between 47% and 70% was reached. The holes were Lorentzians of width 4(±0.3) cm−1. The time evolution of the hole depth was studied. It is described by two exponentials: a short time decay (t1 = 0.37 days) and a long time decay (t2 = 20.4 days) with a 20% infinite time limit. One- and two-photon burning mechanisms act. © 1999 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm

J. Heller, J. W. Bartha, C. C. Poon, and A. C. Tam

Appl. Phys. Lett. 75, 43 (1999); http://dx.doi.org/10.1063/1.124271 (3 pages) | Cited 9 times

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We measure the temperature coefficient of the reflectivity of Si at a red wavelength of 633 nm that is much larger than the Si band gap, and at an infrared wavelength of 1047 nm that is close to the band gap. Our reflectivity measurement is done over a temperature range from room temperature to 200 °C, with an accuracy of better than 1 part in 105. Our results show that the temperature coefficient for the infrared reflection is over three times larger than that for the red reflection over the temperature range studied. Our results and technique can be useful for remote monitoring of temperatures of Si or other materials. © 1999 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
07.20.Dt Thermometers

Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller, Chuan-Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, and R. Stanley Williams

Appl. Phys. Lett. 75, 46 (1999); http://dx.doi.org/10.1063/1.124272 (3 pages) | Cited 30 times

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We report on a direct measurement of the strain in a single Ge “quantum dot” island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.10.Pz Instruments for strain, force, and torque
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Bulk ferromagnetic glasses prepared by flux melting and water quenching

T. D. Shen and R. B. Schwarz

Appl. Phys. Lett. 75, 49 (1999); http://dx.doi.org/10.1063/1.124273 (3 pages) | Cited 156 times

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Several ferromagnetic bulk amorphous alloys of the type Fe–(Co, Cr, Mo, Ga, Sb)–P–B–C, containing between 62 and 71 at. % Fe, have been prepared in the form of 4-mm-diam rods. The glass synthesis consists of mechanically alloying the constituents, purifying the melts in B2O3 flux inside fused silica tubes, and quenching the melts at cooling rates on the order of 100 K/s. All these glasses have a large supercooled region Tx−Tg, ranging from 35 to 61 K, within which the glass can be shaped under a relatively small applied load. It is shown that the value of Tx−Tg depends strongly on the metalloid composition. These bulk metallic glasses have very low coercivity and low hysteresis losses. © 1999 American Institute of Physics.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Selective distribution of arsenic precipitates in low-temperature-grown III–V heterostructures

M. N. Chang, N. T. Yeh, C. M. Lu, K. C. Hsieh, and J.-I. Chyi

Appl. Phys. Lett. 75, 52 (1999); http://dx.doi.org/10.1063/1.124274 (3 pages) | Cited 1 time

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We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/Al0.3Ga0.7As multiple quantum wells, where GaAs is Be doped and Al0.3Ga0.7As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In0.1Ga0.9As/GaAs/In0.1Al0.9As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In0.1Ga0.9As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.-g Phase equilibria
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Au–Cu alloy nanoclusters in silica formed by ion implantation and annealing in reducing or oxidizing atmosphere

F. Gonella, G. Mattei, P. Mazzoldi, C. Sada, G. Battaglin, and E. Cattaruzza

Appl. Phys. Lett. 75, 55 (1999); http://dx.doi.org/10.1063/1.124275 (3 pages) | Cited 25 times

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The formation of binary alloy clusters in sequentially ion-implanted Au–Cu silica glass has been studied as a function of the annealing atmosphere. Alloy formation has been unambiguously evidenced in the as-implanted samples. The selective influence on Au precipitation of either oxygen or hydrogen annealing atmosphere leads to separation of gold and copper or to Au–Cu alloy cluster formation, respectively. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Pj Glass-based composites, vitroceramics
61.46.-w Structure of nanoscale materials
61.80.Jh Ion radiation effects
61.43.Fs Glasses
81.40.Gh Other heat and thermomechanical treatments
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
78.40.Kc Metals, semimetals, and alloys

Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

C. Y. Liu, Chih Chen, C. N. Liao, and K. N. Tu

Appl. Phys. Lett. 75, 58 (1999); http://dx.doi.org/10.1063/1.124276 (3 pages) | Cited 84 times

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Room-temperature electromigration occurs in a thin stripe of eutectic SnPb solder stressed by a current density of 105 amp/cm2. Hillocks and voids grow at the anode and the cathode, respectively. While the dominant diffusion species is Sn in this two-phase alloy, the growth of the hillocks, surprisingly, originates from the Pb grains. © 1999 American Institute of Physics.
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81.30.Bx Phase diagrams of metals, alloys, and oxides
66.30.Qa Electromigration

Stability, geometry, and electronic structure of the boron nitride B36N36 fullerene

Simone S. Alexandre, Mário S. C. Mazzoni, and Hélio Chacham

Appl. Phys. Lett. 75, 61 (1999); http://dx.doi.org/10.1063/1.124277 (3 pages) | Cited 61 times

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We apply first-principles calculations to study the structural and electronic properties of a boron nitride fullerene-like cluster, B36N36. This cluster has shape and dimensions comparable to those of a single-shelled BN fullerene recently produced in an electron-beam irradiation experiment. The calculations show that B36N36 is energetically less favorable than C60, when both are compared to nanotube structures. This is consistent with the experimental difficulty to obtain BN fullerenes. On the other hand, B36N36 presents a large energy gap, larger in fact than that of a BN nanotube of the same diameter. This is an indication that the molecule is a stable one, once it is formed. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
36.40.Qv Stability and fragmentation of clusters
36.40.Mr Spectroscopy and geometrical structure of clusters
71.20.Tx Fullerenes and related materials; intercalation compounds
36.40.Cg Electronic and magnetic properties of clusters

Electromechanical effect in freely suspended liquid crystal films

Serguei V. Yablonskii, Toshiyasu Oue, Hidetaka Nambu, Aleksey S. Mikhailov, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 75, 64 (1999); http://dx.doi.org/10.1063/1.124325 (3 pages) | Cited 12 times

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Electromechanical effect in a freely suspended film based on 4-n-octyl-4′-cyanobiphenyl has been detected by means of light scattering at both the first and second harmonics of the exciting electric field. Experimental studies on voltage and frequency dependencies of the optical response are carried out. Organic solvent vapor is shown to strongly affect the electromechanical response. A feasible mechanism for the electromechanical effect is discussed. © 1999 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.15.+e Liquid thin films
77.65.-j Piezoelectricity and electromechanical effects
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
78.20.Jq Electro-optical effects

Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers

M. J. Bergmann, Ü. Özgür, H. C. Casey, H. O. Everitt, and J. F. Muth

Appl. Phys. Lett. 75, 67 (1999); http://dx.doi.org/10.1063/1.124278 (3 pages) | Cited 44 times

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Dispersion of the ordinary and extraordinary indices of refraction for wurtzite AlxGa1−xN epitaxial layers with x = 0.00, 0.04, 0.08, 0.11, and 0.20 in the range of wavelengths 457<λ<980 nm were measured via a prism-coupled waveguide technique. The quantitative accuracy of x is ±10% and the accuracy of the refractive indices is ∼ ±0.01. The dispersion is found to be well described by a 1st-order Sellmeier dispersion formula. A simple functional form is presented that allows calculation of the refractive indices as functions of x and λ. © 1999 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.20.Fm Birefringence

Dynamic electron scattering distinguishes dodecahedral and tetrahedral crystallographic sites in garnet structure

János L. Lábár

Appl. Phys. Lett. 75, 70 (1999); http://dx.doi.org/10.1063/1.124279 (3 pages) | Cited 1 time

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It is shown in this letter that, in contrast to the accepted belief in the literature, it is possible to determine if a minority component is located on the dodecahedral, octahedral, or tetrahedral sites in a garnet single crystal. This prediction of ours is based on dynamical Bloch-wave calculations and proved experimentally with x-ray measurements in a transmission electron microscope. The previous literature seemed to agree on the assumption that the dodecahedral and tetrahedral sites are indistinguishable from each other. © 1999 American Institute of Physics.
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61.66.Fn Inorganic compounds
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
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