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Applied Physics Letters / Volume 75 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 75, 3150 (1999); doi:10.1063/1.125260 (3 pages)

Quantum point contact in a magnetic field: Far-infrared resonant heating observed in photoconductivity

R. J. Heron1, R. A. Lewis1, B. E. Kane2, G. R. Facer2, R. G. Clark2, A. S. Dzurak2, N. E. Lumpkin2, R. P. Starrett2, D. G. Rickel3, L. N. Pfeiffer4, and K. W. West4

1Department of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia
2Semiconductor Nanofabrication Facility, University of New South Wales, Sydney 2052, Australia
3National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
4Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

(Received 1 July 1999; accepted 22 September 1999)

We report on the far-infrared photoresponse of a quantum point contact device fabricated on a top-gated GaAs/AlGaAs heterostructure. The top-gated architecture avoids the disorder built into conventional modulation-doped structures. We observe a distinctive far-infrared magnetophotoresponse. This depends on the wavelength of the radiation and on the carrier density, which is controlled by the gate voltage. We conclude by comparison with transport data that the oscillations observed in photoconductivity and which are centred around the cyclotron energy arise from the resonant heating of electrons by the far-infrared radiation. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium arsenide, quantum point contacts, photoelectromagnetic effects, two-dimensional electron gas, semiconductor heterojunctions, hot carriers, III-V semiconductors, HETEROJUNCTIONS, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, PHOTOCONDUCTIVITY, FAR INFRARED RADIATION, MAGNETIC FIELDS, SEMICONDUCTOR DEVICES, RESPONSE FUNCTIONS, CARRIER DENSITY

PACS

  • 73.50.Pz

    Photoconduction and photovoltaic effects

  • 73.23.Ad

    Ballistic transport

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 73.40.Ns

    Metal-nonmetal contacts

  • 73.50.Mx

    High-frequency effects; plasma effects

  • 73.61.Ey

    III-V semiconductors

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.125260

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    B. E. Kane, G. R. Facer, A. S. Dzurak, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 72, 3506 (1998)APPLAB000072000026003506000001.

    G. R. Facer, B. E. Kane, A. S. Dzurak, R. J. Heron, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, and K. W. West, Phys. Rev. B 59, 4622 (1999).

    B. J. van Wees, H. van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett. 60, 848 (1988).

    R. Wyss, C. C. Eugster, J. A. del Alamo, and Q. Hu, Appl. Phys. Lett. 63, 1522 (1993)APPLAB000063000011001522000001.

    Q. Hu, Appl. Phys. Lett. 62, 837 (1993)APPLAB000062000008000837000001.

    F. A. MaaMaaø and L. Y. Gorelik, Phys. Rev. B 53, 15885 (1996).

    B. J. van Wees, L. P. Kouwenhoven, H. van Houten, C. W. J. Beenakker, J. E. Mooij, C. T. Foxon, and J. J. Harris, Phys. Rev. B 38, 3625 (1988).

    B. E. Kane, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 67, 1262 (1995)APPLAB000067000009001262000001.


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