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Applied Physics Letters / Volume 75 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 75, 3153 (1999); http://dx.doi.org/10.1063/1.125261 (3 pages)

Direct gap in ordered silicon carbon alloys

Srinivasan Krishnamurthy1, M. A. Berding1, A. Sher1, Mark van Schilfgaarde2, and A.-B. Chen3

1SRI International, Menlo Park, California 94025
2Sandia National Laboratories, Livermore, California 94550
3Physics Department, Auburn University, Auburn, Alabama 36849

(Received 30 June 1999; accepted 10 September 1999)

We show that alloying silicon with a few percent of carbon can render the band gap direct with strong optical absorption, provided the carbon atoms are ordered. The addition of carbon introduces a significant s character into the conduction band minimum, resulting in a large dipole matrix element. First-principles calculations of the optical absorption in ordered in CxSi1−x alloys for x = 1/54 and 1/32 show a near band edge absorption coefficient about half that of GaAs. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon compounds, silicon alloys, absorption coefficients, optical constants, conduction bands, ab initio calculations, SILICON CARBIDES, ENERGY GAP, ELECTRONIC STRUCTURE, ABSORPTION SPECTRA, SEMICONDUCTOR MATERIALS, MUFFIN-TIN POTENTIAL

PACS

  • 71.20.Nr

    Semiconductor compounds

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 71.15.-m

    Methods of electronic structure calculations

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.125261

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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