APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Nov 1999

Volume 75, Issue 20, pp. 3051-3226

Return to All Sections
back to top
RSS Feeds

Fully sealed, high-brightness carbon-nanotube field-emission display

W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, and J. M. Kim

Appl. Phys. Lett. 75, 3129 (1999); http://dx.doi.org/10.1063/1.125253 (3 pages) | Cited 644 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A fully sealed field-emission display 4.5 in. in size has been fabricated using single-wall carbon nanotube (CNT)-organic binders. The fabricated displays were fully scalable at low temperature, below 415 °C, and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1 V/μm and field emission current of 1.5 mA at 3 V/μm (J = 90 μA/cm2) were observed. Brightness of 1800 cd/m2 at 3.7 V/μm was observed on the entire area of a 4.5 in. panel from the green phosphor-indium–tin–oxide glass. The fluctuation of the current was found to be about 7% over a 4.5 in. cathode area. © 1999 American Institute of Physics.
Show PACS
85.45.Fd Field emission displays (FEDs)
42.79.Kr Display devices, liquid-crystal devices

Conduction and mechanical properties of atomic scale gold contacts

S. P. Jarvis, M. A. Lantz, H. Ogiso, H. Tokumoto, and U. Dürig

Appl. Phys. Lett. 75, 3132 (1999); http://dx.doi.org/10.1063/1.125254 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using a dynamic atomic force microscopy (AFM) technique in ultrahigh vacuum, we have directly measured the stiffness and conduction characteristics of a gold tip and sample. The method involves the application of a small sinusoidal oscillating force to the tip at a frequency well below the primary resonance frequency of the cantilever. By measuring the change in amplitude during the approach and retraction of the sample we have a continuous and accurate measure of the contact stiffness. The high sensitivity of this technique has enabled us to measure the mechanical properties of the junction during its initial formation. The most interesting observations are made in the region of initial contact formation where it is not possible to obtain high mechanical sensitivity from the commonly used static force measurement technique. In this region, as the contact is compressed, the contact softens continuously while the conductance remains constant prior to discrete conductance jumps. These are accompanied by simultaneous jumps in stiffness, as predicted by molecular dynamic simulations. Furthermore, the jumps show a strong tendency to half integer values of the conductance quantum. © 1999 American Institute of Physics.
Show PACS
73.23.-b Electronic transport in mesoscopic systems
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.35.Gy Mechanical properties; surface strains

Electrochemical formation of GaAs/Bi Schottky barriers

Philippe M. Vereecken and Peter C. Searson

Appl. Phys. Lett. 75, 3135 (1999); http://dx.doi.org/10.1063/1.125255 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Bismuth layers have been deposited electrochemically on (100) n- and p-type GaAs. The electrical properties of junctions on n-GaAs were dependent on the bismuth deposition potential. Bismuth films deposited at −0.2 V (Ag/AgCl) were compact, continuous, and exhibited good adhesion; the n-GaAs/Bi junctions exhibited an average barrier height of 0.83 eV. Films deposited at ⩽−0.3 V were porous and the barrier heights exhibited an aging effect decreasing to 0.73 eV after several days under ambient conditions. Bismuth films deposited on p-GaAs exhibited barrier heights of 0.57 eV. The sum of the barrier heights for n- and p-type junctions correspond to 1.40 eV, close to the band gap of GaAs consistent with Fermi-level pinning. © 1999 American Institute of Physics.
Show PACS
81.15.Pq Electrodeposition, electroplating
73.30.+y Surface double layers, Schottky barriers, and work functions
82.45.-h Electrochemistry and electrophoresis
68.35.Gy Mechanical properties; surface strains
73.40.Ns Metal-nonmetal contacts
81.40.Gh Other heat and thermomechanical treatments

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N. I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, Yu. V. Melnik, and V. A. Dmitriev

Appl. Phys. Lett. 75, 3138 (1999); http://dx.doi.org/10.1063/1.125256 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Fabrication of high-performance GaN microwave devices, which are the excellent candidates for new generation of high-power solid-state components, requires insulating GaN substrate materials. Due to lack of bulk GaN crystals and particularly lack of semi-insulating GaN substrates, we propose insulating GaN layers on silicon carbide as substrates for the fabrication of GaN-based microwave devices. In this work, we demonstrate insulating GaN layers on silicon carbide substrates. Insulating GaN layers doped with zinc were grown on silicon carbide substrates by hydride vapor phase epitaxy. High crystal quality of the grown material was proved by x-ray diffraction measurements showing the full width at a half maximum of ω-scan rocking curve of about 100 arcsec. Temperature dependence of specific resistivity of the GaN:Zn layers was measured in the temperature range from 200 to 500 K. The value of the specific resistivity was found to be 1012 Ω cm at 300 K and 109 Ω cm at 500 K. © 1999 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Properties of Si-doped GaN films grown using multiple AlN interlayers

D. D. Koleske, M. E. Twigg, A. E. Wickenden, R. L. Henry, R. J. Gorman, J. A. Freitas, and M. Fatemi

Appl. Phys. Lett. 75, 3141 (1999); http://dx.doi.org/10.1063/1.125257 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electrical, optical, and structural properties of Si-doped GaN films grown on multiple AlN interlayers (IL) sandwiched between high-temperature (HT) GaN are presented. We show that as the number of AlN IL/HT GaN layers increases, the electron mobility increases in the top Si-doped GaN layer, showing a near doubling from 440 to 725 cm2 V−1 s−1. Cross-sectional transmission electron microscopy images reveal a significant reduction in the screw dislocation density for GaN films grown on the AlN IL/HT GaN layers. The symmetric and off-axis x-ray linewidths increase as the number of AlN IL/HT GaN layers increase, indicating a greater relative misalignment of the adjacent HT GaN layers. Photoluminescence spectra of undoped and Si-doped GaN films on the multiple AlN IL/HT GaN layers have small yellow-band intensity. Analysis based on a single-donor/single-acceptor model for the electrical conduction suggests that the improved electron mobility is the result of a reduced acceptor concentration in the top GaN film and that this acceptor may possibly be associated with threading screw dislocations in GaN.
Show PACS
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology

Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy

Fangqing Xie and Peter von Blanckenhagen

Appl. Phys. Lett. 75, 3144 (1999); http://dx.doi.org/10.1063/1.125258 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Harmonic oscillations of the tunneling current on partially oxidized Si(111) and on Au clusters deposited on these surfaces were observed by scanning tunneling spectroscopy (STS). The frequencies of the current oscillations are independent of the bias voltage. They are the product of a basic frequency (29.99±0.01 Hz) times an integer N. It is assumed that the basic frequency is the reciprocal of the capture time of an electron in an individual trap, that N is related to the number of traps taking part in the charge-discharge processes during STS, and that the electron traps in the small area participating in the local STS are functionally correlated by some unknown mechanism which reduces the electron capture time proportional to 1/N. © 1999 American Institute of Physics.
Show PACS
72.80.Cw Elemental semiconductors
81.65.Mq Oxidation
73.25.+i Surface conductivity and carrier phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption

K. Hess, B. Tuttle, F. Register, and D. K. Ferry

Appl. Phys. Lett. 75, 3147 (1999); http://dx.doi.org/10.1063/1.125259 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Based on the energetics for hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for this effect may be considerably lower than the previously assumed value (∼3.6 eV). We support these findings further by recent experimental results related to the giant isotope effect in hydrogen related transistor degradation and the fact that degradation occurs also with relatively low supply voltages. We also show that the high threshold energy model is difficult to defend at these low voltages, even though electron–electron interactions provide a mechanism to create hot electrons with energies of ∼3.6 eV. © 1999 American Institute of Physics.  
Show PACS
85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
85.30.De Semiconductor-device characterization, design, and modeling

Quantum point contact in a magnetic field: Far-infrared resonant heating observed in photoconductivity

R. J. Heron, R. A. Lewis, B. E. Kane, G. R. Facer, R. G. Clark, A. S. Dzurak, N. E. Lumpkin, R. P. Starrett, D. G. Rickel, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 75, 3150 (1999); http://dx.doi.org/10.1063/1.125260 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the far-infrared photoresponse of a quantum point contact device fabricated on a top-gated GaAs/AlGaAs heterostructure. The top-gated architecture avoids the disorder built into conventional modulation-doped structures. We observe a distinctive far-infrared magnetophotoresponse. This depends on the wavelength of the radiation and on the carrier density, which is controlled by the gate voltage. We conclude by comparison with transport data that the oscillations observed in photoconductivity and which are centred around the cyclotron energy arise from the resonant heating of electrons by the far-infrared radiation. © 1999 American Institute of Physics.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
73.23.Ad Ballistic transport
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
73.50.Mx High-frequency effects; plasma effects
73.61.Ey III-V semiconductors

Direct gap in ordered silicon carbon alloys

Srinivasan Krishnamurthy, M. A. Berding, A. Sher, Mark van Schilfgaarde, and A.-B. Chen

Appl. Phys. Lett. 75, 3153 (1999); http://dx.doi.org/10.1063/1.125261 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that alloying silicon with a few percent of carbon can render the band gap direct with strong optical absorption, provided the carbon atoms are ordered. The addition of carbon introduces a significant s character into the conduction band minimum, resulting in a large dipole matrix element. First-principles calculations of the optical absorption in ordered in CxSi1−x alloys for x = 1/54 and 1/32 show a near band edge absorption coefficient about half that of GaAs. © 1999 American Institute of Physics.
Show PACS
71.20.Nr Semiconductor compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.15.-m Methods of electronic structure calculations

Effective g∗ factor of two-dimensional electrons in GaN/AlGaN heterojunctions

W. Knap, E. Frayssinet, M. L. Sadowski, C. Skierbiszewski, D. Maude, V. Falko, M. Asif Khan, and M. S. Shur

Appl. Phys. Lett. 75, 3156 (1999); http://dx.doi.org/10.1063/1.125262 (3 pages) | Cited 19 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m∗ = 0.242±0.002 m0. The Lande g factor for the 2D electrons (g = 2.06±0.04) was determined from the angular dependence of the amplitude of Shubnikov–de-Haas oscillations experiments in tilted magnetic field. © 1999 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
76.40.+b Diamagnetic and cyclotron resonances
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close