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15 Nov 1999

Volume 75, Issue 20, pp. 3051-3226

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Erratum: “Evidence for localized Si-donor state and its DX-like properties in AlGaN” [Appl. Phys. Lett. 74, 3833 (1999)]

C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis

Appl. Phys. Lett. 75, 3225 (1999); http://dx.doi.org/10.1063/1.125286 (1 page) | Cited 1 time

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71.55.Eq III-V semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
62.50.-p High-pressure effects in solids and liquids
99.10.Cd Errata
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Erratum: “Optical poling of azo-dye-doped thin films using an ultrashort pulse laser” [Appl. Phys. Lett. 75, 157 (1999)]

Kenji Kitaoka, Jinhai Si, Tsuneo Mitsuyu, and Kazuyuki Hirao

Appl. Phys. Lett. 75, 3225 (1999); http://dx.doi.org/10.1063/1.125287 (1 page)

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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
99.10.Cd Errata
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Erratum: “Facet temperature distribution in broad stripe high power laser diodes” [Appl. Phys. Lett. 75, 1467 (1999)]

Toshiro Hayakawa

Appl. Phys. Lett. 75, 3226 (1999); http://dx.doi.org/10.1063/1.125278 (1 page)

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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
07.20.Dt Thermometers
42.79.Bh Lenses, prisms and mirrors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
78.66.Fd III-V semiconductors
99.10.Cd Errata
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