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15 Nov 1999

Volume 75, Issue 20, pp. 3051-3226

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A characterization technique for quantum well infrared photodetectors

C. J. Chen, K. K. Choi, L. Rokhinson, W. H. Chang, and D. C. Tsui

Appl. Phys. Lett. 75, 3210 (1999); http://dx.doi.org/10.1063/1.125280 (3 pages) | Cited 7 times

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Despite the rapid development of the quantum well (QW) infrared technology, the intrinsic properties of the QW infrared photodetectors (QWIPs) have not been directly measured under the operating conditions of the detector. In this work, we introduce a characterization technique, which utilizes the surface corrugation to probe the absorption coefficient and the photoconductive gain of a QWIP under different operating conditions. This technique enables the intrinsic properties of the detector to be more accurately characterized and its performance better assessed. A mid-wavelength QWIP is used for the demonstration of this technique. The results are compared to those deduced from the conventional measurements. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.50.Pz Photoconduction and photovoltaic effects
68.35.B- Structure of clean surfaces (and surface reconstruction)

Noninvasive simultaneous determination of conductivity and permeability

H. S. Schnyders, Marie-Louise Saboungi, and J. E. Enderby

Appl. Phys. Lett. 75, 3213 (1999); http://dx.doi.org/10.1063/1.125281 (3 pages) | Cited 3 times

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Simultaneous measurements of both the conductivity and permeability are presented using noninvasive methods based on inductive coupling. Explicit expressions for cylindrical and spherical geometries are derived. The technique, especially relevant to liquids and solids in extreme environments, will also be valuable for nanomaterials and other systems where external contacts are difficult to establish. © 1999 American Institute of Physics.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection

Marco Marinelli, E. Milani, A. Paoletti, A. Tucciarone, G. Verona Rinati, M. Angelone, and M. Pillon

Appl. Phys. Lett. 75, 3216 (1999); http://dx.doi.org/10.1063/1.125282 (3 pages) | Cited 44 times

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Diamond films were grown on silicon by microwave chemical-vapor deposition using a CH4–H2 gas mixture. The crystalline quality of the films was assessed through their α-particle detection performance, a property highly sensitive to film quality, by using a 5.5 MeV 241Am source. A maximum collection efficiency η of 70%, 50% being the average value, was obtained in a 115-μm-thick sample after β-particle irradiation (“priming effect”). Unprimed efficiency η=50% maximum, 30% average, was also obtained on other samples. The dependence of the efficiency and the resolving power on the external electric field was studied as well. The results are interpreted by means of a Monte Carlo analysis of the α-particle detection process. It is concluded that, in the priming process, a saturation occurs of deep defects limiting the as-grown detector performance, and charge collection distance is only limited by grain boundaries located close to the substrate side. Therefore, there is indication that further improvement can be reasonably obtained by increasing film thickness. © 1999 American Institute of Physics.
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29.40.Wk Solid-state detectors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
71.55.Cn Elemental semiconductors

Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope

Y. D. Kim, W. Choi, H. Wakimoto, S. Usami, H. Tomokage, and T. Ando

Appl. Phys. Lett. 75, 3219 (1999); http://dx.doi.org/10.1063/1.125283 (3 pages) | Cited 16 times

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Surface morphology characteristics and electron emission properties of boron-doped polycrystalline diamond thin films grown by microwave plasma-assisted chemical-vapor deposition were investigated using an ultra-high-vacuum scanning tunneling microscope. Small secondary grains with average size less than 10 nm were observed to be on top of the isolated crystal surfaces. The current imaging tunneling spectroscopy (CITS) study revealed that high electron emission occurred at some crystalline facets while others showed relatively no measurable electron emission. The CITS study at high magnification also indicated that the electron emission was initiated at the grain boundaries rather than at the top of the grains. This observation suggests that the electrons transport through the grain-boundary conductive channels and preferentially emit at the low electron affinity facets. © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Mm Grain and twin boundaries

Selectivities among capillary bonds in mesoscale self-assembly

Hongkai Wu, Ned Bowden, and George M. Whitesides

Appl. Phys. Lett. 75, 3222 (1999); http://dx.doi.org/10.1063/1.125284 (3 pages) | Cited 10 times

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This letter describes the capillarity-driven self-assembly of mm-sized plates of poly(dimethylsiloxane) at the perfluorodecalin/H2O interface into complex arrays. The shape of the interacting menisci could be tailored by three strategies: (1) changing the shape of uniformly hydrophobic edges; (2) patterning the distribution of vertical hydrophobic strips on the edges and, in some cases, varying the density of the blocks; and (3) patterning the hydrophobic areas on a face to be chiral. © 1999 American Institute of Physics.
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68.03.-g Gas-liquid and vacuum-liquid interfaces
68.05.-n Liquid-liquid interfaces
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