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22 Nov 1999

Volume 75, Issue 21, pp. 3243-3419

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Thermal-expansion effects in near-field optical microscopy fiber probes induced by laser light absorption

P. G. Gucciardi, M. Colocci, M. Labardi, and M. Allegrini

Appl. Phys. Lett. 75, 3408 (1999); http://dx.doi.org/10.1063/1.125309 (3 pages) | Cited 12 times

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We present a study on thermal-expansion effects induced by laser light coupling into metal-coated probes for near-field scanning optical microscopy. An expansion of the probe edge of 170 nm per mW of coupled power has been observed as an effect of the temperature raise due to light absorption in the metal coating. The phenomenon has been studied in both time and frequency domains by modulating the coupled laser power, in order to measure the typical time constants related to heat exchange processes, that turned out to be of the order of a few milliseconds. An analytical model, taking into account both the heat conduction through the coating and the convection losses, provides scales for the system parameters and fits the experimental data remarkably well. © 1999 American Institute of Physics.
Show PACS
07.79.Fc Near-field scanning optical microscopes
07.60.Vg Fiber-optic instruments
42.81.Pa Sensors, gyros
44.35.+c Heat flow in multiphase systems

Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes

Ju Cheol Shin, Cheol Seong Hwang, Hyeong Joon Kim, and Soon Oh Park

Appl. Phys. Lett. 75, 3411 (1999); http://dx.doi.org/10.1063/1.125310 (3 pages) | Cited 28 times

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The electrical conduction behaviors of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films on Pt electrodes were analyzed based on a fully depleted film, thermionic field emission, and space charge limited conduction model in the low and high electric field regions, respectively. For films having thicknesses ranging from 150 to 250 nm, no thickness-dependent variation in the dielectric constant was observed due to the relatively large thicknesses. The rather small film-thickness-dependent leakage current characteristics in the low-field region elucidates that the positive space charge density in the film is about 1018 cm−3, which is a smaller value than that of the sputter deposited (Ba, Sr)TiO3 thin films by an order of magnitude. The calculated interfacial potential barrier height and effective mass of electrons were 0.93 eV and 0.09m0, respectively. The slope larger than 2 from the log J vs log V plot in the high-field region implies that the energy level of electron traps are continuously distributed in the energy band gap. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
73.61.Ng Insulators
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
73.50.Fq High-field and nonlinear effects
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
71.55.Ht Other nonmetals

Reconstruction of three-dimensional chemistry and geometry using focused ion beam microscopy

D. N. Dunn and R. Hull

Appl. Phys. Lett. 75, 3414 (1999); http://dx.doi.org/10.1063/1.125311 (3 pages) | Cited 33 times

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A technique to reconstruct high resolution three-dimensional structural images and chemical maps using focused ion beam microscopy is presented. A focused ion beam microscope is used to collect secondary electron images and secondary ion mass spectroscopy elemental maps as a function of depth. These images and elemental maps are then used to reconstruct volume image and chemical maps with 20 nm lateral and depth resolutions. Methods to improve lateral resolution and to reduce uncertainties due to differential sputtering are also discussed. © 1999 American Institute of Physics.
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68.37.Vj Field emission and field-ion microscopy
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.05.Pj Image processing
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Variation of field emission and photoelectric thresholds of diamond films with average grain size

A. A. Rouse, J. B. Bernhard, E. D. Sosa, and D. E. Golden

Appl. Phys. Lett. 75, 3417 (1999); http://dx.doi.org/10.1063/1.125312 (3 pages) | Cited 11 times

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We report a decrease in field emission threshold from 3.8 to 3.4 eV for room temperature electrophoresis grown polycrystalline diamond films on molybdenum tips as the diamond average grain size increases from 0.25 to 6 μm. The field emission thresholds agree with photoelectric work functions determined from photoelectron spectroscopy measurements of similarly grown flat samples. In addition, diamond surface states are observed at 0.4, 0.9, and 1.8 eV above the valence band. The results are consistent with an increasing negative electron affinity with grain size due to increased surface hydrogen bonding and with perhaps a contribution from surface defect states. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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