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6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

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Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots

D. Morris, N. Perret, and S. Fafard

Appl. Phys. Lett. 75, 3593 (1999); http://dx.doi.org/10.1063/1.125398 (3 pages) | Cited 68 times

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Carrier relaxation processes are investigated in self-assembled InAs/GaAs quantum dots using time-resolved photoluminescence spectroscopy. The quantum-dot photoluminescence rise time has been measured as functions of carrier excitation density and excitation wavelengths. The measured relaxation time is about 32 ps at low excitation density and decreases by 1 over the excitation density from about 3 W/cm2, under nonresonant laser excitation. The threshold of this density-dependent regime occurs at a slightly higher density as the excitation wavelength increases and it disappears when the photon pumping energy is below the wetting layer barrier energy. These results clearly establish the regime where Auger processes become the dominant carrier relaxation mechanism in these self-assembled quantum dots. © 1999 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.61.Ey III-V semiconductors

Optical coupling between monocrystalline colloidal crystals and a planar waveguide

Y. Zhao, I. Avrutsky, and B. Li

Appl. Phys. Lett. 75, 3596 (1999); http://dx.doi.org/10.1063/1.125399 (3 pages) | Cited 8 times

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We have experimentally demonstrated an optical material structure consisting of monocrystalline colloidal crystals and a planar waveguide. We have performed experimental studies of light coupling into the waveguide structure via colloidal gratings, as well as the multiplexing capability of the structure. Effective index obtained from measured parameters agrees well with theoretical calculations. Effect of crystal nonuniformity on diffraction line shape and width, as well as possible applications are discussed. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter

Appl. Phys. Lett. 75, 3599 (1999); http://dx.doi.org/10.1063/1.125400 (3 pages) | Cited 62 times

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We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200–500 meV spectral range. Polarization dependent photocurrent spectroscopy shows that the intersubband transitions in the InAs-QDs are nearly independent of the polarization of the incoming radiation. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering

E. Silveira, A. Tabata, J. R. Leite, R. Trentin, V. Lemos, T. Frey, D. J. As, D. Schikora, and K. Lischka

Appl. Phys. Lett. 75, 3602 (1999); http://dx.doi.org/10.1063/1.125401 (3 pages) | Cited 29 times

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Phase separation effects in cubic InxGa1−xN epitaxial layers were investigated by means of resonant Raman scattering. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. The results, which are confirmed by x-ray diffractometry (XRD) experiments, show the presence of In-rich inclusions in c-InGaN layers with x = 0.19 and 0.33. In-rich inclusions were also found by XRD in a lower In-content layer with x = 0.07. Compositional inhomogeneity of about 10% was observed through selective resonances of localized regions in the In-rich separated inclusions. We find that the In-rich separated phase has nearly the same composition in all analyzed samples (x ≅ 0.8). © 1999 American Institute of Physics.
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68.55.Nq Composition and phase identification
64.75.-g Phase equilibria
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Enhancement of two-photon excited fluorescence using one-dimensional photonic crystals

Jing Yong Ye, Mitsuru Ishikawa, Yuji Yamane, Noriaki Tsurumachi, and Hiroki Nakatsuka

Appl. Phys. Lett. 75, 3605 (1999); http://dx.doi.org/10.1063/1.125402 (3 pages) | Cited 17 times

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We fabricated a one-dimensional photonic crystal structure with a defect layer of a poly(vinyl alcohol) thin film doped with 2-aminopurine (2AP). The defect induced a transmission peak in the photonic band gap at 610 nm, to which ultrashort laser pulses were tuned. We observed enhanced two-photon fluorescence emission from 2AP in the photonic crystal structure with a factor of 120. The enhancement was attributed to the high local field of light generated by a photonic state localized at the defect layer. Furthermore, under the enhanced light intensity, we carried out photobleaching experiments, which gave useful information on the photochemistry of 2AP. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
82.50.-m Photochemistry

Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells

P. J. McCann, K. Namjou, and X. M. Fang

Appl. Phys. Lett. 75, 3608 (1999); http://dx.doi.org/10.1063/1.125403 (3 pages) | Cited 35 times

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Strong photoluminescence between 3 and 4 μm was observed at temperatures as high as 55 °C from PbSe/PbSrSe multiple-quantum-well structures grown on BaF2 (111) substrates by molecular-beam epitaxy. Fabry–Perot interference fringes dominated the spectra, indicating that the luminescence was primarily due to stimulated emission processes. Peak emission energies were determined by fitting Gaussian functions to the spectra, and they showed that emission energies at 25 °C decreased from 402 to 312 meV as quantum-well thickness increased from 40 to 200 Å. The temperature tuning coefficient was also observed to decrease from 0.400 meV/K for a 200 Å multiple-quantum-well sample to 0.313 meV/K for a 40 Å multiple-quantum-well sample. © 1999 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials

Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells

H. Schmidt, A. C. Abare, J. E. Bowers, S. P. Denbaars, and A. Imamoglu

Appl. Phys. Lett. 75, 3611 (1999); http://dx.doi.org/10.1063/1.125404 (3 pages) | Cited 14 times

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We present measurements of second-harmonic generation in interband transitions of InxGa1−xN/GaN multiple quantum well samples. The second-order susceptibility χ(2) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain χ(2) = 1.3±0.4×10−10 m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conversion efficiency was 6.3×10−7. An enhancement of the nonlinearity due to strong internal piezoelectric fields could not be observed. © 1999 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors

Generation of amplitude-squeezed light from 1550 nm distributed feedback semiconductor laser under wavelength selective optical feedback conditions

F. Jérémie, C. Chabran, and P. Gallion

Appl. Phys. Lett. 75, 3614 (1999); http://dx.doi.org/10.1063/1.125405 (3 pages)

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Excess noise that degrades the squeezing of a 1550 nm distributed feedback semiconductor laser is identified using a Mach Zehnder interferometer. This excess noise is reduced using wavelength selective optical feedback. Amplitude-squeezed states then are generated at room temperature. © 1999 American Institute of Physics.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Px Semiconductor lasers; laser diodes
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
42.50.Dv Quantum state engineering and measurements
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Instabilities in low-pressure inductive discharges with attaching gases

M. A. Lieberman, A. J. Lichtenberg, and A. M. Marakhtanov

Appl. Phys. Lett. 75, 3617 (1999); http://dx.doi.org/10.1063/1.125406 (3 pages) | Cited 42 times

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Plasma instabilities at frequencies 1 Hz–900 kHz have been observed in low-pressure inductive processing discharges with attaching gases. Instability windows in pressure and driving power are found. A volume-averaged (global) model of the instability is developed, considering idealized inductive and capacitive energy deposition. As pressure or power are varied to cross a threshold, the instability is born at a Hopf bifurcation, with relaxation oscillations between inductive and capacitive modes causing modulations of charged particle densities, electron temperature, and plasma potential. The oscillations can be so strong that the potential collapses and negative ions flow to the walls. © 1999 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
05.45.-a Nonlinear dynamics and chaos
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
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Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells

S. C. Hohng and D. S. Kim

Appl. Phys. Lett. 75, 3620 (1999); http://dx.doi.org/10.1063/1.125407 (3 pages)

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Two-color photoluminescence experiments are performed on the anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown, and its many intriguing aspects, particularly the role of long-lived defects, are revealed. Our experiments shed light on the ongoing controversies between many different models. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

History-dependent orientational order of rubbed polyimide for liquid-crystal alignment

Milind P. Mahajan and Charles Rosenblatt

Appl. Phys. Lett. 75, 3623 (1999); http://dx.doi.org/10.1063/1.125408 (3 pages) | Cited 12 times

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A polyimide film that was spin coated onto a glass substrate was multiply rubbed along different directions and studied using ellipsometry and atomic force microscopy. The data show a minimum required rubbing strength for the onset of orientational order in the polyimide. When over rubbed along an axis perpendicular to the first rubbing direction, a smaller rubbing strength was required for the onset of order along this direction. This behavior indicates that the polyimide had been partially disentangled by the initial rubbing, needing only weaker rubbing to be reoriented by the second rubbing. © 1999 American Institute of Physics.
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61.25.H- Macromolecular and polymers solutions; polymer melts
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
07.60.Fs Polarimeters and ellipsometers

Intersubband relaxation time for InxGa1−xAs/AlAs quantum wells with large transition energy

G. Ghislotti, E. Riedo, D. Ielmini, and M. Martinelli

Appl. Phys. Lett. 75, 3626 (1999); http://dx.doi.org/10.1063/1.125409 (3 pages) | Cited 9 times

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Intersubband relaxation time for InxGa1−xAs/AlAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Γ–X coupling on intersubband decay is discussed. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

G. G. Qin, C. L. Heng, G. F. Bai, K. Wu, C. Y. Li, Z. C. Ma, W. H. Zong, and Li-ping You

Appl. Phys. Lett. 75, 3629 (1999); http://dx.doi.org/10.1063/1.125410 (3 pages) | Cited 5 times

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Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640–680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers. © 1999 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers

Measurement of photorefractive phase shift in mesogenic composites

Hiroshi Ono, Tomomi Kawamura, Nazarene Mokam Frias, Keiko Kitamura, Nobuhiro Kawatsuki, and Hideki Norisada

Appl. Phys. Lett. 75, 3632 (1999); http://dx.doi.org/10.1063/1.125411 (3 pages) | Cited 8 times

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Photorefractive phase shifts in high-performance photorefractive mesogenic composites were determined, and trap-limited space-charge fields were estimated. It is demonstrated that photorefractive mesogenic composites show high performance although the space-charge field is considerably low in comparison with other kinds of photorefractive materials which show no mesophase. This means that the high performance of photorefractive mesogenic composites originates in the easy reorientation of mesogen under a low electric field. © 1999 American Institute of Physics.
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42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Gi Light-sensitive materials
77.22.Jp Dielectric breakdown and space-charge effects

Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow

A. S. Zuruzi, C.-h. Chiu, W. T. Chen, S. K. Lahiri, and K. N. Tu

Appl. Phys. Lett. 75, 3635 (1999); http://dx.doi.org/10.1063/1.125412 (3 pages) | Cited 1 time

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We carried out experiments and numerical simulations to investigate the transport of Sn in a composite solder joint, comprising of high-Pb and high-Sn (SnPb) alloys, in a chip-composite solder-organic substrate package during the reflow process. Both the experimental and simulation results demonstrate that surface diffusion causes the transport of Sn on the surface to be faster than that inside the solder joint. Surface diffusion also accelerates the homogenization process of the composite solder joint. © 1999 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.20.Vj Joining; welding

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

J. F. Damlencourt, J. L. Leclercq, M. Gendry, P. Regreny, and G. Hollinger

Appl. Phys. Lett. 75, 3638 (1999); http://dx.doi.org/10.1063/1.125413 (3 pages) | Cited 4 times

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Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP substrates (0.81% misfit), with high structural and high optoelectronic quality at an operating wavelength of ∼2.0 μm. Full relaxation is achieved, using the paramorphic approach, by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrostriction in gallium nitride

I. L. Guy, S. Muensit, and E. M. Goldys

Appl. Phys. Lett. 75, 3641 (1999); http://dx.doi.org/10.1063/1.125414 (3 pages) | Cited 13 times

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Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2. This finding may have significance for devices using strained layers of this material. © 1999 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.Bn Piezoelectric and electrostrictive constants

Influence of the liquid states on the crystallization process of nanocrystal-forming Zr–Cu–Pd–Al metallic glasses

Cang Fan and Akihisa Inoue

Appl. Phys. Lett. 75, 3644 (1999); http://dx.doi.org/10.1063/1.125415 (3 pages) | Cited 14 times

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Rapidly solidified ribbons of nanocrystal-forming Zr–Cu–Pd–Al metallic glasses were prepared at various liquid temperatures (TL). Differential scanning calorimetry (DSC) traces show clearly the influence of the liquid states on the thermal properties and crystallization process. Namely, with increasing TL, the exothermal peaks of the DSC traces shift to higher temperatures, the super-cooled-liquid region ΔTx increases, and the decomposition of the metastable compound Zr2(Cu, Pd) becomes more difficult. These results suggest that the liquid state strongly controls the crystallization process of the nanocrystal-forming metallic glasses. This behavior may originate from the variation of the quenched-in nuclei, which highly depends on the short-range-order domains in liquid with different TL. We suggest that the stronger attractive interaction in Zr–Pd, which exhibits large negative mixing enthalpy, leads to the short-range order domains. © 1999 American Institute of Physics.
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61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.60.Q- Nucleation
64.75.-g Phase equilibria

Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN

J. Holst, A. Kaschner, A. Hoffmann, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki

Appl. Phys. Lett. 75, 3647 (1999); http://dx.doi.org/10.1063/1.125416 (3 pages) | Cited 7 times

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Epitaxial laterally overgrown GaN (ELOG) structures are microscopically characterized using spatially resolved microphotoluminescence (micro-PL) and time-dependent spectroscopy. To understand the influence of the different lateral growth mechanisms on the peak position and the temporal behavior of the transition lines, we correlated the different micro-PL emission spectra with results of spatially resolved time-dependent spectroscopy experiments. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.30.+h Metal-insulator transitions and other electronic transitions
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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Relationship between sp2 carbon content and E04 optical gap in amorphous carbon-based materials

C. Oppedisano and A. Tagliaferro

Appl. Phys. Lett. 75, 3650 (1999); http://dx.doi.org/10.1063/1.125417 (3 pages) | Cited 28 times

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A decreasing trend of the optical gap E04 with increasing sp2 carbon content has been noticed in amorphous carbon thin films. This behavior is common to materials grown using different deposition methods and having different composition and local structure. The use of a model of density of states in which the π bands are assumed to be Gaussian shaped allows us to explain such behavior, once the role of network distortion and hydrogen content in determining the width of the bands is taken into account. © 1999 American Institute of Physics.
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71.23.Cq Amorphous semiconductors, metallic glasses, glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.20.At Surface states, band structure, electron density of states
61.43.-j Disordered solids
78.66.Nk Insulators

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, J. Silcox, R. Dimitrov, and M. Stutzmann

Appl. Phys. Lett. 75, 3653 (1999); http://dx.doi.org/10.1063/1.125418 (3 pages) | Cited 28 times

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High-quality AlGaN/GaN heterostructures have been grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. Polarization effects are exploited to achieve a two-dimensional electron-gas sheet density of 8.8×1012 cm−2 and greater on intentionally undoped material with a measured room-temperature mobility as high as 1478 cm2/V s. Transistors were then fabricated from this material, yielding a unity current gain frequency of 50 GHz and a unity power gain frequency of 97 GHz. By increasing the buffer layer thickness, output powers of 1.88 W/mm at 4 GHz with an efficiency of 34% were achieved. These results prove that the polarization effects in the nitrides are as enormous as theory predicts. The key to the improved mobility and operation of the devices of the all-molecular-beam-epitaxy-grown material, the AlN nucleation layer, will be discussed. © 1999 American Institute of Physics.  
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
73.61.Ey III-V semiconductors

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

M. Kemerink, J. W. Gerritsen, P. M. Koenraad, H. van Kempen, and J. H. Wolter

Appl. Phys. Lett. 75, 3656 (1999); http://dx.doi.org/10.1063/1.125419 (3 pages) | Cited 9 times

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Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.60.Fi Electroluminescence
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation

Transient enhanced diffusion after laser thermal processing of ion implanted silicon

Kevin S. Jones, Heather Banisaukas, Josh Glassberg, Ebrahim Andideh, Craig Jasper, Allen Hoover, Aditya Agarwal, and Mike Rendon

Appl. Phys. Lett. 75, 3659 (1999); http://dx.doi.org/10.1063/1.125420 (3 pages) | Cited 13 times

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The effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) of boron was investigated. A 270-Å-thick amorphous layer formed by 10 keV Si+ implantation was melted and regrown using a 20 ns ultraviolet laser pulse. Transmission electron microscopy revealed that recrystallization of the amorphous layer following LTP results in a high concentration of stacking faults and microtwins in the regrown region. Also, the end-of-range loop evolution during subsequent 750 °C furnace annealing, is different in a LTP sample compared to a control sample. Secondary ion mass spectroscopy of a boron marker layer 6000 Å below the surface showed that LTP alone produced no enhanced diffusion. However, during subsequent furnace annealing, the boron layer in the LTP sample experienced just as much TED as in the control sample which was only implanted and furnace annealed. These results imply that laser melting and recrystallization of an implantation-induced amorphous layer does not measurably reduce the excess interstitials released from the end-of-range implant damage. © 1999 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
66.30.J- Diffusion of impurities
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.Nn Stacking faults and other planar or extended defects
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.05.Cy Elemental semiconductors
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Cyclotron resonance in modulation-doped ZnSe/Zn1−xCdxSe and ZnTe/CdSe single quantum wells

H. K. Ng, Y. A. Leem, R. Knobel, I. P. Smorchkova, A. A. Sirenko, and N. Samarth

Appl. Phys. Lett. 75, 3662 (1999); http://dx.doi.org/10.1063/1.125421 (3 pages) | Cited 6 times

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We report low-temperature (4.2 K) cyclotron resonance measurements on high-mobility, two-dimensional electron gases in modulation-doped ZnSe/Zn1−xCdxSe (x = 0.06, 0.12, and 0.24) single quantum wells, as well as in a modulation-doped ZnTe/CdSe single quantum well. These experiments carried out in magnetic fields ranging up to 17 T yield reliable measurements of the effective mass m∗ of conduction-band electrons in Zn1−xCdxSe alloys, including the measurement of m∗ in cubic CdSe. © 1999 American Institute of Physics.
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76.40.+b Diamagnetic and cyclotron resonances
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

K. C. Hall, S. W. Leonard, H. M. van Driel, A. R. Kost, E. Selvig, and D. H. Chow

Appl. Phys. Lett. 75, 3665 (1999); http://dx.doi.org/10.1063/1.125422 (3 pages) | Cited 14 times

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Spin relaxation times in GaAsxSb1−x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D’yakonov–Perel theory of spin relaxation [M. I. D’yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs. © 1999 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Fm Birefringence
78.47.-p Spectroscopy of solid state dynamics
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
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