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6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

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Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy

Y. Hasegawa, K. Akiyama, M. Ono, S.-J. Kahng, Q. K. Xue, K. Nakayama, T. Hashizume, and T. Sakurai

Appl. Phys. Lett. 75, 3668 (1999); http://dx.doi.org/10.1063/1.125423 (3 pages) | Cited 3 times

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We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Vj Field emission and field-ion microscopy
73.40.Ns Metal-nonmetal contacts
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Activation energy for fluorine transport in amorphous silicon

G. R. Nash, J. F. W. Schiz, C. D. Marsh, P. Ashburn, and G. R. Booker

Appl. Phys. Lett. 75, 3671 (1999); http://dx.doi.org/10.1063/1.125424 (3 pages) | Cited 13 times

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The transport of ion-implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600–700 °C. The measured F depth profiles are modeled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2 eV±0.4 eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation-induced defects. © 1999 American Institute of Physics.
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66.30.J- Diffusion of impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys

High energy-barrier for defect creation in thin-film transistors based on hot-wire amorphous silicon

B. Stannowski, R. E. I. Schropp, and A. Nascetti

Appl. Phys. Lett. 75, 3674 (1999); http://dx.doi.org/10.1063/1.125425 (3 pages) | Cited 4 times

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Thin-film transistors based on amorphous silicon deposited by hot-wire chemical-vapor deposition (CVD) exhibited a high mean barrier height of 1.074 eV for defect creation after gate-voltage stress. This is 77 meV higher than for glow-discharge devices. Transistors with a SiO2 or a-SiNx:H gate dielectric showed good performance with a field-effect mobility up to 0.7 cm2/V s. Thus, good thin-film transistors with a superior stability can be deposited by hot-wire CVD at high deposition rates of 1.7 nm/s. We demonstrate that a reduced defect creation in the silicon and not the hot-wire-specific absence of interface ion bombardment is responsible for this higher stability. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
61.43.Dq Amorphous semiconductors, metals, and alloys
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Nanoconstriction microscopy of the giant magnetoresistance in cobalt/copper spin valves

S. J. C. H. Theeuwen, J. Caro, K. P. Wellock, S. Radelaar, C. H. Marrows, B. J. Hickey, and V. I. Kozub

Appl. Phys. Lett. 75, 3677 (1999); http://dx.doi.org/10.1063/1.125426 (3 pages) | Cited 22 times

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We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence of averaging over many domains. The GMR ratio decreases with increasing bias current. For one particular device, this is accompanied by the development of two distinct GMR plateaus, the plateau level depending on bias polarity and sweep direction of the magnetic field. We attribute the observed behavior to current-induced changes of the magnetization, involving spin transfer due to incoherent emission of magnons and self-field effects. © 1999 American Institute of Physics.
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75.47.De Giant magnetoresistance
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.70.Kw Domain structure (including magnetic bubbles and vortices)
73.40.Jn Metal-to-metal contacts
75.30.Ds Spin waves
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Influence of crystal structure and oxygen content on exchange-coupling properties of IrMn/CoFe spin-valve films

Hiromi N. Fuke, Kazuhiro Saito, Masatoshi Yoshikawa, Hitoshi Iwasaki, and Masashi Sahashi

Appl. Phys. Lett. 75, 3680 (1999); http://dx.doi.org/10.1063/1.125427 (3 pages) | Cited 15 times

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Investigations were made into the relationship between the exchange-coupling properties and the IrMn crystal grain size for CoFe/IrMn spin valves. The IrMn crystal grain size increased with increasing thickness and decreasing oxygen content of the IrMn layer. The increase in the IrMn grain size resulted in a higher blocking temperature (TB) but a lower unidirectional anisotropy field (HUA). This opposite dependence of TB and HUA on the IrMn grain size is different from those of other antiferromagnetic films such as FeMn, NiMn, and CrMnPt. An HUA of 400 Oe at room temperature and a TB of 300 °C are obtained for CoFe (2 nm)/IrMn (10 nm) spin valves by controlling the oxygen content of the IrMn layer. © 1999 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.50.Ee Antiferromagnetics
68.55.-a Thin film structure and morphology
75.30.Gw Magnetic anisotropy

Switching of nanoscale magnetic elements

K. J. Kirk, J. N. Chapman, S. McVitie, P. R. Aitchison, and C. D. W. Wilkinson

Appl. Phys. Lett. 75, 3683 (1999); http://dx.doi.org/10.1063/1.125428 (3 pages) | Cited 44 times

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We have investigated the magnetic properties of ultra-small-patterned elements of Co and NiFe thin films. The elements were rectangular with an aspect ratio in the range 3.75–20. The smallest were 200×40 nm2 with 50 nm gaps between them, corresponding to an areal density of 27 Gbit/in2 if used as discrete-patterned media for magnetic recording. The elements were fabricated by electron-beam lithography and lift-off patterning and high-resolution magnetic images were obtained by Lorentz microscopy in a transmission electron microscope. In situ magnetization reversal experiments showed that the strong dependence of the switching field on element width extended to the smallest elements of both materials. The switching field for 40-nm-wide Co elements was 1200 Oe and for 40-nm-wide NiFe elements was 800 Oe. Element length and aspect ratio had little effect. © 1999 American Institute of Physics.
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75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys
75.50.Cc Other ferromagnetic metals and alloys

Ordering of island-like FePt crystallites with orientations

Bo Bian, Kazuhisa Sato, Yoshihiko Hirotsu, and Akihiro Makino

Appl. Phys. Lett. 75, 3686 (1999); http://dx.doi.org/10.1063/1.125429 (3 pages) | Cited 45 times

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Thin films of oriented island-like crystallites of L10 FePt separated by amorphous (a-)Al2O3 were fabricated. The process took advantage of the overgrowth of α-Fe on Pt “seed” particles epitaxially grown on (100) NaCl and MgO substrates and the ordering reaction between Fe and Pt upon annealing at temperatures higher than 500 °C. The coercivities of the annealed (600 °C for 6 h) a-Al2O3/Fe(1 nm)/Pt (1.5 nm) films on both the NaCl (100) and MgO (100) substrates are higher than 3.3 kOe. Transmission electron microscopy observation showed that the film consisted of oriented L10 FePt island-like crystals with an average size of 12 nm and a separation of 4 nm. It was found that any one of the three 〈100〉 axes of the fcc Pt parent particles could act as the tetragonal c axis of the L10 FePt superstructure and all three-variant ordered crystalline domains of the tetragonal L10 phase could exist in the small 10-nm-size FePt crystallites. The high magnetic coercivity of the film, with well-separated FePt particles, can be attributed to the ordering (L10) as well as the oriented nature of the FePt crystallites. © 1999 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.55.-a Thin film structure and morphology
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Ss Magnetic recording materials

Inhomogeneous transport in heteroepitaxial La0.7Ca0.3MnO3/SrTiO3 multilayers

Moon-Ho Jo, Neil D. Mathur, Jan E. Evetts, Mark G. Blamire, Manuel Bibes, and Josep Fontcuberta

Appl. Phys. Lett. 75, 3689 (1999); http://dx.doi.org/10.1063/1.125430 (3 pages) | Cited 48 times

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We have investigated the electrical transport properties of heteroepitaxial La0.7Ca0.3MnO3(LCMO)/SrTiO3 multilayers; as the LCMO layer thickness was varied from 25 to 2.5 nm, the metallic transition was suppressed and enhanced magnetoresistance extended over low temperatures. The results of transport and magnetic measurements imply a vertically inhomogeneous magnetic structure in the LCMO layers, with magnetically disordered interfaces. Although strain is clearly implicated in this surface disorder, we show that intrinsic magnetic disorder must also be associated with the interfaces. © 1999 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.47.Gk Colossal magnetoresistance

Relationship between film thickness and the critical current of YBa2Cu3O7−δ-coated conductors

S. R. Foltyn, Q. X. Jia, P. N. Arendt, L. Kinder, Y. Fan, and J. F. Smith

Appl. Phys. Lett. 75, 3692 (1999); http://dx.doi.org/10.1063/1.125431 (3 pages) | Cited 103 times

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During the development of YBa2Cu3O7−δ (YBCO) coatings on flexible metal tapes, it has become evident that the achievable critical current (Ic) reaches a maximum value of about 200 A per cm of conductor width at a coating thickness of 1–2 μm. Additional YBCO beyond this thickness can actually reduce Ic. To investigate, critical current density (Jc) has been measured for samples with YBCO ranging from 0.39 to 6.3 μm in thickness. Several films were thinned by ion milling and remeasured with two significant results: almost no supercurrent is carried at thickness levels above 2 μm; and for films thicker than 3 μm, Jc is drastically reduced near the substrate as well. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.25.Sv Critical currents

Low-field magnetic resonance imaging with a high-Tc dc superconducting quantum interference device

K. Schlenga, R. McDermott, John Clarke, R. E. de Souza, A. Wong-Foy, and A. Pines

Appl. Phys. Lett. 75, 3695 (1999); http://dx.doi.org/10.1063/1.125432 (3 pages) | Cited 37 times

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A spectrometer incorporating a high transition temperature dc superconducting quantum interference device (SQUID) is used to obtain nuclear magnetic resonance signals from protons in mineral oil at room temperature in fields up to 3 mT. The spatial separation between the SQUID magnetometer at 77 K and the sample at room temperature is less than 1 mm. At 2 mT, the signal is easily resolved in a single scan. Two-dimensional images of samples consisting of pieces of lucite or glass immersed in mineral oil are obtained at 2 mT. © 1999 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
76.60.Pc NMR imaging
07.55.Ge Magnetometers for magnetic field measurements
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Enhanced fatigue and retention properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes

J. Yin, T. Zhu, Z. G. Liu, and T. Yu

Appl. Phys. Lett. 75, 3698 (1999); http://dx.doi.org/10.1063/1.125433 (3 pages) | Cited 17 times

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Ferroelectric perovskite Pb(Ta0.05Zr0.48Ti0.47)O3 thin-film capacitors having LaxSr1−xCoO3 bottom and top electrodes have been prepared on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition. It is found that La0.25Sr0.75CoO3 bottom electrodes with cubic structure strongly promote the formation of (001) texture of PTZT films and improve the fatigue and retention properties of the capacitors. The polarization of the La0.25Sr0.75CoO3/Pb(Ta0.05Zr0.48Ti0.47)O3/La0.25Sr0.75CoO3 capacitors with a Pb(Ta0.05Zr0.48Ti0.47)O3 thickness of 400 nm were subjected to no degradation after 1×1010 switching cycles at an applied voltage 5 V with a frequency of 1 MHz. The capacitor retains more than 92.6% of its polarization after a retention time up to 105 s. The possible microstructural background responsible for the excellent fatigue and retention properties was discussed. © 1999 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
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Optimization of blazed quantum-grid infrared photodetectors

L. P. Rokhinson, C. J. Chen, K. K. Choi, D. C. Tsui, G. A. Vawter, L. Yan, M. Jiang, and T. Tamir

Appl. Phys. Lett. 75, 3701 (1999); http://dx.doi.org/10.1063/1.125434 (3 pages) | Cited 4 times

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In a quantum-grid infrared photodetector (QGIP), the active multiple quantum well material is patterned into a grid structure. The purposes of the grid are, on the one hand, to create additional lateral electron confinement and, on the other, to convert part of the incident light into parallel propagation. With these two unique functions, a QGIP allows intersubband transition to occur in all directions. In this work, we focused on improving the effectiveness of a QGIP in redirecting the propagation of light using a blazed structure. The optimization of the grid parameters in terms of the blaze angle and the periodicity was performed by numerical simulation using the modal transmission-line theory and verified by experiment. With a blazed structure, the sensitivity of a QGIP can be improved by a factor of 1.8 compared with a regular QGIP with rectangular profiles. © 1999 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Coulomb blockade in quasimetallic silicon-on-insulator nanowires

A. Tilke, R. H. Blick, H. Lorenz, J. P. Kotthaus, and D. A. Wharam

Appl. Phys. Lett. 75, 3704 (1999); http://dx.doi.org/10.1063/1.125435 (3 pages) | Cited 28 times

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Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Ds Quantum interference devices
85.35.Gv Single electron devices
68.35.Fx Diffusion; interface formation
81.65.Mq Oxidation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors

I. K. Sou, Z. H. Ma, and G. K. L. Wong

Appl. Phys. Lett. 75, 3707 (1999); http://dx.doi.org/10.1063/1.125436 (3 pages) | Cited 15 times

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This work focuses on the investigation of the difference between the photoresponse of ZnS, ZnSSe, and that of ZnSTe Schottky-barrier photodiodes, with a particular aim to reveal the underlying causes of the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky barrier photodiodes. To form the bottom electrode layer for the newly developed ZnSSe diode, n-type doping of ZnSSe by incorporating Al flux during molecular beam epitaxial growth was studied. Excellent-to-good dopant activation is achieved for Se composition up to 50%. The measured photoresponse of the diodes clearly indicates that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky-barrier photodiodes. The results also reveal that the ZnSSe diode, having a much better visible rejection power, is a more suitable choice for high-performance visible–blind ultraviolet detection applications. © 1999 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
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Effect of reactive ion etching on the yellow luminescence of GaN

D. Basak, M. Lachab, T. Nakanishi, and S. Sakai

Appl. Phys. Lett. 75, 3710 (1999); http://dx.doi.org/10.1063/1.125437 (3 pages) | Cited 14 times

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Photoluminescence spectra of GaN grown by metalorganic chemical-vapor deposition on sapphire show that by reactive ion etching, the intensity of the yellow luminescence (YL) band decreases compared to that of the as-grown GaN, due to nonradiative recombination at the damage-induced defect centers. The intensity of the YL in dry-etched GaN has been found to be dependent on rf power and postetch annealing. No change in intensity is observed with further etching indicating a uniform spread of yellow emitters in the epilayer which supports the view that point defects like VGa are the origin of the YL. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
71.55.Eq III-V semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Acoustic band-gap engineering using finite-size layered structures of multiple periodicity

Mingrong Shen and Wenwu Cao

Appl. Phys. Lett. 75, 3713 (1999); http://dx.doi.org/10.1063/1.125438 (3 pages) | Cited 21 times

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The transmission coefficient of a layered structure made of glass and water was calculated using transfer matrix method and also measured as a function of frequency. It was found that acoustic band gaps can be created using only 3–4 cells of a two-phase layered structure. By introducing two or more periods into the layered structure, very sharp passbands and very broad stopbands can be engineered for acoustic waves. Such acoustic band-gap materials could be used for making high-quality acoustic filters, acoustic mirrors and vibration insulation devices in selective frequency range. © 1999 American Institute of Physics.
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43.20.El Reflection, refraction, diffraction of acoustic waves
43.40.Sk Inverse problems in structural acoustics and vibration
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.50.Gf Noise control at source: redesign, application of absorptive materials and reactive elements, mufflers, noise silencers, noise barriers, and attenuators, etc.

Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian

Appl. Phys. Lett. 75, 3716 (1999); http://dx.doi.org/10.1063/1.125439 (3 pages) | Cited 55 times

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Three-dimensional (3D), periodic nanowriting on diamond clusters is reported in this letter. Concentric circular rings were observed on diamond microclusters, nucleated near the periphery of a laser-irradiated region, when chemical-vapor deposited diamond was processed in air, with laser pulses of 380 fs duration and at a wavelength of 248 nm. Periodic ripples also have been observed on single-crystal and polycrystalline diamond surfaces. Further, it is experimentally shown that the periodicity of these corrugated two-dimensional and 3D structures is shorter than that of the laser wavelength used (248 nm for the excimer fs laser and 825 nm for the Ti–sapphire fs laser). © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
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Erratum: “Stimulated emission and lasing in whispering gallery modes of GaN microdisk cavities” [Appl. Phys. Lett. 75, 166 (1999)]

Seongsik Chang, Nathan B. Rex, Richard K. Chang, Gabel Chong, and Louis J. Guido

Appl. Phys. Lett. 75, 3719 (1999); http://dx.doi.org/10.1063/1.125392 (1 page) | Cited 1 time

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
78.45.+h Stimulated emission
99.10.Cd Errata
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Erratum: “Four-wave mixing of strong picosecond optical pulses in passive semiconductor waveguides” [Appl. Phys. Lett. 74, 2105 (1999)]

J. M. Tang and K. A. Shore

Appl. Phys. Lett. 75, 3720 (1999); http://dx.doi.org/10.1063/1.125393 (1 page) | Cited 1 time

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Abstract Unavailable
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
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