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6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

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Optimization of blazed quantum-grid infrared photodetectors

L. P. Rokhinson, C. J. Chen, K. K. Choi, D. C. Tsui, G. A. Vawter, L. Yan, M. Jiang, and T. Tamir

Appl. Phys. Lett. 75, 3701 (1999); http://dx.doi.org/10.1063/1.125434 (3 pages) | Cited 4 times

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In a quantum-grid infrared photodetector (QGIP), the active multiple quantum well material is patterned into a grid structure. The purposes of the grid are, on the one hand, to create additional lateral electron confinement and, on the other, to convert part of the incident light into parallel propagation. With these two unique functions, a QGIP allows intersubband transition to occur in all directions. In this work, we focused on improving the effectiveness of a QGIP in redirecting the propagation of light using a blazed structure. The optimization of the grid parameters in terms of the blaze angle and the periodicity was performed by numerical simulation using the modal transmission-line theory and verified by experiment. With a blazed structure, the sensitivity of a QGIP can be improved by a factor of 1.8 compared with a regular QGIP with rectangular profiles. © 1999 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Coulomb blockade in quasimetallic silicon-on-insulator nanowires

A. Tilke, R. H. Blick, H. Lorenz, J. P. Kotthaus, and D. A. Wharam

Appl. Phys. Lett. 75, 3704 (1999); http://dx.doi.org/10.1063/1.125435 (3 pages) | Cited 28 times

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Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Ds Quantum interference devices
85.35.Gv Single electron devices
68.35.Fx Diffusion; interface formation
81.65.Mq Oxidation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors

I. K. Sou, Z. H. Ma, and G. K. L. Wong

Appl. Phys. Lett. 75, 3707 (1999); http://dx.doi.org/10.1063/1.125436 (3 pages) | Cited 15 times

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This work focuses on the investigation of the difference between the photoresponse of ZnS, ZnSSe, and that of ZnSTe Schottky-barrier photodiodes, with a particular aim to reveal the underlying causes of the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky barrier photodiodes. To form the bottom electrode layer for the newly developed ZnSSe diode, n-type doping of ZnSSe by incorporating Al flux during molecular beam epitaxial growth was studied. Excellent-to-good dopant activation is achieved for Se composition up to 50%. The measured photoresponse of the diodes clearly indicates that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky-barrier photodiodes. The results also reveal that the ZnSSe diode, having a much better visible rejection power, is a more suitable choice for high-performance visible–blind ultraviolet detection applications. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
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