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6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

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Effect of reactive ion etching on the yellow luminescence of GaN

D. Basak, M. Lachab, T. Nakanishi, and S. Sakai

Appl. Phys. Lett. 75, 3710 (1999); http://dx.doi.org/10.1063/1.125437 (3 pages) | Cited 15 times

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Photoluminescence spectra of GaN grown by metalorganic chemical-vapor deposition on sapphire show that by reactive ion etching, the intensity of the yellow luminescence (YL) band decreases compared to that of the as-grown GaN, due to nonradiative recombination at the damage-induced defect centers. The intensity of the YL in dry-etched GaN has been found to be dependent on rf power and postetch annealing. No change in intensity is observed with further etching indicating a uniform spread of yellow emitters in the epilayer which supports the view that point defects like VGa are the origin of the YL. © 1999 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
71.55.Eq III-V semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Acoustic band-gap engineering using finite-size layered structures of multiple periodicity

Mingrong Shen and Wenwu Cao

Appl. Phys. Lett. 75, 3713 (1999); http://dx.doi.org/10.1063/1.125438 (3 pages) | Cited 21 times

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The transmission coefficient of a layered structure made of glass and water was calculated using transfer matrix method and also measured as a function of frequency. It was found that acoustic band gaps can be created using only 3–4 cells of a two-phase layered structure. By introducing two or more periods into the layered structure, very sharp passbands and very broad stopbands can be engineered for acoustic waves. Such acoustic band-gap materials could be used for making high-quality acoustic filters, acoustic mirrors and vibration insulation devices in selective frequency range. © 1999 American Institute of Physics.
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43.20.El Reflection, refraction, diffraction of acoustic waves
43.40.Sk Inverse problems in structural acoustics and vibration
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.50.Gf Noise control at source: redesign, application of absorptive materials and reactive elements, mufflers, noise silencers, noise barriers, and attenuators, etc.

Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian

Appl. Phys. Lett. 75, 3716 (1999); http://dx.doi.org/10.1063/1.125439 (3 pages) | Cited 55 times

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Three-dimensional (3D), periodic nanowriting on diamond clusters is reported in this letter. Concentric circular rings were observed on diamond microclusters, nucleated near the periphery of a laser-irradiated region, when chemical-vapor deposited diamond was processed in air, with laser pulses of 380 fs duration and at a wavelength of 248 nm. Periodic ripples also have been observed on single-crystal and polycrystalline diamond surfaces. Further, it is experimentally shown that the periodicity of these corrugated two-dimensional and 3D structures is shorter than that of the laser wavelength used (248 nm for the excimer fs laser and 825 nm for the Ti–sapphire fs laser). © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
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