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6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

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Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots

D. Morris, N. Perret, and S. Fafard

Appl. Phys. Lett. 75, 3593 (1999); http://dx.doi.org/10.1063/1.125398 (3 pages) | Cited 68 times

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Carrier relaxation processes are investigated in self-assembled InAs/GaAs quantum dots using time-resolved photoluminescence spectroscopy. The quantum-dot photoluminescence rise time has been measured as functions of carrier excitation density and excitation wavelengths. The measured relaxation time is about 32 ps at low excitation density and decreases by 1 over the excitation density from about 3 W/cm2, under nonresonant laser excitation. The threshold of this density-dependent regime occurs at a slightly higher density as the excitation wavelength increases and it disappears when the photon pumping energy is below the wetting layer barrier energy. These results clearly establish the regime where Auger processes become the dominant carrier relaxation mechanism in these self-assembled quantum dots. © 1999 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.61.Ey III-V semiconductors

Optical coupling between monocrystalline colloidal crystals and a planar waveguide

Y. Zhao, I. Avrutsky, and B. Li

Appl. Phys. Lett. 75, 3596 (1999); http://dx.doi.org/10.1063/1.125399 (3 pages) | Cited 8 times

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We have experimentally demonstrated an optical material structure consisting of monocrystalline colloidal crystals and a planar waveguide. We have performed experimental studies of light coupling into the waveguide structure via colloidal gratings, as well as the multiplexing capability of the structure. Effective index obtained from measured parameters agrees well with theoretical calculations. Effect of crystal nonuniformity on diffraction line shape and width, as well as possible applications are discussed. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter

Appl. Phys. Lett. 75, 3599 (1999); http://dx.doi.org/10.1063/1.125400 (3 pages) | Cited 62 times

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We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200–500 meV spectral range. Polarization dependent photocurrent spectroscopy shows that the intersubband transitions in the InAs-QDs are nearly independent of the polarization of the incoming radiation. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering

E. Silveira, A. Tabata, J. R. Leite, R. Trentin, V. Lemos, T. Frey, D. J. As, D. Schikora, and K. Lischka

Appl. Phys. Lett. 75, 3602 (1999); http://dx.doi.org/10.1063/1.125401 (3 pages) | Cited 29 times

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Phase separation effects in cubic InxGa1−xN epitaxial layers were investigated by means of resonant Raman scattering. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. The results, which are confirmed by x-ray diffractometry (XRD) experiments, show the presence of In-rich inclusions in c-InGaN layers with x = 0.19 and 0.33. In-rich inclusions were also found by XRD in a lower In-content layer with x = 0.07. Compositional inhomogeneity of about 10% was observed through selective resonances of localized regions in the In-rich separated inclusions. We find that the In-rich separated phase has nearly the same composition in all analyzed samples (x ≅ 0.8). © 1999 American Institute of Physics.
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68.55.Nq Composition and phase identification
64.75.-g Phase equilibria
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Enhancement of two-photon excited fluorescence using one-dimensional photonic crystals

Jing Yong Ye, Mitsuru Ishikawa, Yuji Yamane, Noriaki Tsurumachi, and Hiroki Nakatsuka

Appl. Phys. Lett. 75, 3605 (1999); http://dx.doi.org/10.1063/1.125402 (3 pages) | Cited 17 times

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We fabricated a one-dimensional photonic crystal structure with a defect layer of a poly(vinyl alcohol) thin film doped with 2-aminopurine (2AP). The defect induced a transmission peak in the photonic band gap at 610 nm, to which ultrashort laser pulses were tuned. We observed enhanced two-photon fluorescence emission from 2AP in the photonic crystal structure with a factor of 120. The enhancement was attributed to the high local field of light generated by a photonic state localized at the defect layer. Furthermore, under the enhanced light intensity, we carried out photobleaching experiments, which gave useful information on the photochemistry of 2AP. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
82.50.-m Photochemistry

Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells

P. J. McCann, K. Namjou, and X. M. Fang

Appl. Phys. Lett. 75, 3608 (1999); http://dx.doi.org/10.1063/1.125403 (3 pages) | Cited 35 times

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Strong photoluminescence between 3 and 4 μm was observed at temperatures as high as 55 °C from PbSe/PbSrSe multiple-quantum-well structures grown on BaF2 (111) substrates by molecular-beam epitaxy. Fabry–Perot interference fringes dominated the spectra, indicating that the luminescence was primarily due to stimulated emission processes. Peak emission energies were determined by fitting Gaussian functions to the spectra, and they showed that emission energies at 25 °C decreased from 402 to 312 meV as quantum-well thickness increased from 40 to 200 Å. The temperature tuning coefficient was also observed to decrease from 0.400 meV/K for a 200 Å multiple-quantum-well sample to 0.313 meV/K for a 40 Å multiple-quantum-well sample. © 1999 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials

Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells

H. Schmidt, A. C. Abare, J. E. Bowers, S. P. Denbaars, and A. Imamoglu

Appl. Phys. Lett. 75, 3611 (1999); http://dx.doi.org/10.1063/1.125404 (3 pages) | Cited 14 times

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We present measurements of second-harmonic generation in interband transitions of InxGa1−xN/GaN multiple quantum well samples. The second-order susceptibility χ(2) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain χ(2) = 1.3±0.4×10−10 m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conversion efficiency was 6.3×10−7. An enhancement of the nonlinearity due to strong internal piezoelectric fields could not be observed. © 1999 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors

Generation of amplitude-squeezed light from 1550 nm distributed feedback semiconductor laser under wavelength selective optical feedback conditions

F. Jérémie, C. Chabran, and P. Gallion

Appl. Phys. Lett. 75, 3614 (1999); http://dx.doi.org/10.1063/1.125405 (3 pages)

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Excess noise that degrades the squeezing of a 1550 nm distributed feedback semiconductor laser is identified using a Mach Zehnder interferometer. This excess noise is reduced using wavelength selective optical feedback. Amplitude-squeezed states then are generated at room temperature. © 1999 American Institute of Physics.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Px Semiconductor lasers; laser diodes
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
42.50.Dv Quantum state engineering and measurements
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