APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

Return to All Sections
back to top
RSS Feeds

Instabilities in low-pressure inductive discharges with attaching gases

M. A. Lieberman, A. J. Lichtenberg, and A. M. Marakhtanov

Appl. Phys. Lett. 75, 3617 (1999); http://dx.doi.org/10.1063/1.125406 (3 pages) | Cited 42 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Plasma instabilities at frequencies 1 Hz–900 kHz have been observed in low-pressure inductive processing discharges with attaching gases. Instability windows in pressure and driving power are found. A volume-averaged (global) model of the instability is developed, considering idealized inductive and capacitive energy deposition. As pressure or power are varied to cross a threshold, the instability is born at a Hopf bifurcation, with relaxation oscillations between inductive and capacitive modes causing modulations of charged particle densities, electron temperature, and plasma potential. The oscillations can be so strong that the potential collapses and negative ions flow to the walls. © 1999 American Institute of Physics.
Show PACS
52.80.Pi High-frequency and RF discharges
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
05.45.-a Nonlinear dynamics and chaos
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close