APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Dec 1999

Volume 75, Issue 23, pp. 3593-3720

Return to All Sections
back to top
RSS Feeds

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells

S. C. Hohng and D. S. Kim

Appl. Phys. Lett. 75, 3620 (1999); http://dx.doi.org/10.1063/1.125407 (3 pages)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two-color photoluminescence experiments are performed on the anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown, and its many intriguing aspects, particularly the role of long-lived defects, are revealed. Our experiments shed light on the ongoing controversies between many different models. © 1999 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

History-dependent orientational order of rubbed polyimide for liquid-crystal alignment

Milind P. Mahajan and Charles Rosenblatt

Appl. Phys. Lett. 75, 3623 (1999); http://dx.doi.org/10.1063/1.125408 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A polyimide film that was spin coated onto a glass substrate was multiply rubbed along different directions and studied using ellipsometry and atomic force microscopy. The data show a minimum required rubbing strength for the onset of orientational order in the polyimide. When over rubbed along an axis perpendicular to the first rubbing direction, a smaller rubbing strength was required for the onset of order along this direction. This behavior indicates that the polyimide had been partially disentangled by the initial rubbing, needing only weaker rubbing to be reoriented by the second rubbing. © 1999 American Institute of Physics.
Show PACS
61.25.H- Macromolecular and polymers solutions; polymer melts
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
07.60.Fs Polarimeters and ellipsometers

Intersubband relaxation time for InxGa1−xAs/AlAs quantum wells with large transition energy

G. Ghislotti, E. Riedo, D. Ielmini, and M. Martinelli

Appl. Phys. Lett. 75, 3626 (1999); http://dx.doi.org/10.1063/1.125409 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Intersubband relaxation time for InxGa1−xAs/AlAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Γ–X coupling on intersubband decay is discussed. © 1999 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

G. G. Qin, C. L. Heng, G. F. Bai, K. Wu, C. Y. Li, Z. C. Ma, W. H. Zong, and Li-ping You

Appl. Phys. Lett. 75, 3629 (1999); http://dx.doi.org/10.1063/1.125410 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640–680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers. © 1999 American Institute of Physics.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers

Measurement of photorefractive phase shift in mesogenic composites

Hiroshi Ono, Tomomi Kawamura, Nazarene Mokam Frias, Keiko Kitamura, Nobuhiro Kawatsuki, and Hideki Norisada

Appl. Phys. Lett. 75, 3632 (1999); http://dx.doi.org/10.1063/1.125411 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photorefractive phase shifts in high-performance photorefractive mesogenic composites were determined, and trap-limited space-charge fields were estimated. It is demonstrated that photorefractive mesogenic composites show high performance although the space-charge field is considerably low in comparison with other kinds of photorefractive materials which show no mesophase. This means that the high performance of photorefractive mesogenic composites originates in the easy reorientation of mesogen under a low electric field. © 1999 American Institute of Physics.
Show PACS
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Gi Light-sensitive materials
77.22.Jp Dielectric breakdown and space-charge effects

Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow

A. S. Zuruzi, C.-h. Chiu, W. T. Chen, S. K. Lahiri, and K. N. Tu

Appl. Phys. Lett. 75, 3635 (1999); http://dx.doi.org/10.1063/1.125412 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We carried out experiments and numerical simulations to investigate the transport of Sn in a composite solder joint, comprising of high-Pb and high-Sn (SnPb) alloys, in a chip-composite solder-organic substrate package during the reflow process. Both the experimental and simulation results demonstrate that surface diffusion causes the transport of Sn on the surface to be faster than that inside the solder joint. Surface diffusion also accelerates the homogenization process of the composite solder joint. © 1999 American Institute of Physics.
Show PACS
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.20.Vj Joining; welding

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

J. F. Damlencourt, J. L. Leclercq, M. Gendry, P. Regreny, and G. Hollinger

Appl. Phys. Lett. 75, 3638 (1999); http://dx.doi.org/10.1063/1.125413 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP substrates (0.81% misfit), with high structural and high optoelectronic quality at an operating wavelength of ∼2.0 μm. Full relaxation is achieved, using the paramorphic approach, by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining. © 1999 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrostriction in gallium nitride

I. L. Guy, S. Muensit, and E. M. Goldys

Appl. Phys. Lett. 75, 3641 (1999); http://dx.doi.org/10.1063/1.125414 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2. This finding may have significance for devices using strained layers of this material. © 1999 American Institute of Physics.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.Bn Piezoelectric and electrostrictive constants

Influence of the liquid states on the crystallization process of nanocrystal-forming Zr–Cu–Pd–Al metallic glasses

Cang Fan and Akihisa Inoue

Appl. Phys. Lett. 75, 3644 (1999); http://dx.doi.org/10.1063/1.125415 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Rapidly solidified ribbons of nanocrystal-forming Zr–Cu–Pd–Al metallic glasses were prepared at various liquid temperatures (TL). Differential scanning calorimetry (DSC) traces show clearly the influence of the liquid states on the thermal properties and crystallization process. Namely, with increasing TL, the exothermal peaks of the DSC traces shift to higher temperatures, the super-cooled-liquid region ΔTx increases, and the decomposition of the metastable compound Zr2(Cu, Pd) becomes more difficult. These results suggest that the liquid state strongly controls the crystallization process of the nanocrystal-forming metallic glasses. This behavior may originate from the variation of the quenched-in nuclei, which highly depends on the short-range-order domains in liquid with different TL. We suggest that the stronger attractive interaction in Zr–Pd, which exhibits large negative mixing enthalpy, leads to the short-range order domains. © 1999 American Institute of Physics.
Show PACS
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.60.Q- Nucleation
64.75.-g Phase equilibria

Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN

J. Holst, A. Kaschner, A. Hoffmann, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki

Appl. Phys. Lett. 75, 3647 (1999); http://dx.doi.org/10.1063/1.125416 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial laterally overgrown GaN (ELOG) structures are microscopically characterized using spatially resolved microphotoluminescence (micro-PL) and time-dependent spectroscopy. To understand the influence of the different lateral growth mechanisms on the peak position and the temporal behavior of the transition lines, we correlated the different micro-PL emission spectra with results of spatially resolved time-dependent spectroscopy experiments. © 1999 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.30.+h Metal-insulator transitions and other electronic transitions
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close