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13 Dec 1999

Volume 75, Issue 24, pp. 3739-3886

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Highly confined waveguides and waveguide bends in three-dimensional photonic crystal

Alongkarn Chutinan and Susumu Noda

Appl. Phys. Lett. 75, 3739 (1999); http://dx.doi.org/10.1063/1.125441 (3 pages) | Cited 84 times

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We demonstrate a method to create a highly confined waveguide with sharp bend in three-dimensional photonic crystal. By theoretical calculation, we show that a single-mode waveguide can be created in the stacked-bar structure by removing one stripe. Crossing waveguides of the adjacent layers can create the waveguide bend and by this way, the guided modes after and before the bend remain the same so that the transmission through the bend is optimized. These results provide very important guidelines for designing a three-dimensional photonic crystal waveguide. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

All solid-state diode-pumped Raman laser with self-frequency conversion

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, G. I. Ryabtsev, and A. A. Demidovich

Appl. Phys. Lett. 75, 3742 (1999); http://dx.doi.org/10.1063/1.125440 (3 pages) | Cited 37 times

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Operation of an all solid-state compact pulsed Raman laser pumped by a continuous-wave laser diode is demonstrated. The Stokes and anti-Stokes radiations of stimulated Raman scattering at the 1.181 and 0.973 μm wavelengths, respectively, are generated as a result of self-frequency conversion of the 1.067 μm laser radiation in a Nd3+:KGd(WO4)2 crystal. With Q-switched operation, the Raman laser threshold corresponds to 230 mW of a laser diode light power. The output power of 4.8 mW is achieved at the Stokes wavelength with a kilohertz repetition rate. © 1999 American Institute of Physics.
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42.55.Ye Raman lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Efficient light-emitting diodes based on a binaphthalene-containing polymer

Alex K-Y. Jen, Yunqi Liu, Qiao-Sheng Hu, and Lin Pu

Appl. Phys. Lett. 75, 3745 (1999); http://dx.doi.org/10.1063/1.125442 (3 pages) | Cited 22 times

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We report an efficient electroluminescent device using a binaphthalene-containing polymer as the emissive layer and a fluorinated copper phthalocyanine as the electron injecting/transporting layer. The structural feature of this polymer is a twisted, nonplanar backbone with two hexyloxy side groups. The energy levels for the highest occupied molecular orbital and the lowest unoccupied molecular orbital of this polymer were −5.71 and −2.38 eV as determined by cyclic voltammetry and ultraviolet-visible measurements. A light-emitting diode with aluminum electrode exhibited high brightness (9400 cd/m2 at 24.3 mA/cm2), excellent luminous efficiency (4.9 lm/W), and a large external quantum efficiency (2.0%). © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials
61.41.+e Polymers, elastomers, and plastics
71.20.Rv Polymers and organic compounds
78.40.Me Organic compounds and polymers

Wavelength-adjustable surface-emitting single-mode laser diodes with contradirectional surface-mode coupling

P. O. Kellermann, N. Finger, W. Schrenk, E. Gornik, R. Winterhoff, H. Schweizer, and F. Scholz

Appl. Phys. Lett. 75, 3748 (1999); http://dx.doi.org/10.1063/1.125443 (3 pages) | Cited 3 times

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Single-mode surface emission has been achieved from visible red GaInP/AlGaInP laser diodes by applying the contradirectional surface-mode coupling technique. The emission wavelength (679.4 nm) of the laser structures was adjusted (decreased) in steps of 0.2 nm in an interval of 1.2 nm by reducing the thickness of the waveguide on top of the laser diode. The laser diodes emitted via the surface with a beam divergence of 0.12° and showed single-mode emission both in ac as well as in dc operation with a minimum spectral linewidth of 0.09 nm. The highest side-mode suppression achieved in dc operation was 26 dB. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

B. Damilano, N. Grandjean, S. Dalmasso, and J. Massies

Appl. Phys. Lett. 75, 3751 (1999); http://dx.doi.org/10.1063/1.125444 (3 pages) | Cited 48 times

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InGaN/GaN self-assembled quantum dots (QDs) were obtained by molecular beam epitaxy making use of the Stranski–Krastanov growth mode. Room-temperature photoluminescence (PL) energy of QDs was observed from 2.6 to 3.1 eV depending on the dot size. PL linewidths as low as 40–70 meV at 10 K and 90–110 meV at 300 K indicate low dot size dispersion. The comparison of PL intensity versus temperature of an InGaN epilayer and InGaN/GaN QDs demonstrates the higher radiative efficiency of the latter. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Two-element phased array of antiguided vertical-cavity lasers

Darwin K. Serkland, K. D. Choquette, G. R. Hadley, K. M. Geib, and A. A. Allerman

Appl. Phys. Lett. 75, 3754 (1999); http://dx.doi.org/10.1063/1.125445 (3 pages) | Cited 29 times

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We demonstrate antiguided coupling of two adjacent vertical-cavity surface-emitting lasers (VCSELs), obtaining a 1×2 phase-locked array at 869 nm. The lateral index modification required for antiguiding is achieved by a patterned 3 nm etch performed between two epitaxial growths. In contrast with prior coupled VCSELs, adjacent antiguided VCSELs can emit in phase and produce a single on-axis lobe in the far field. Greater than 2 mW of in-phase output power is demonstrated with two VCSELs separated by 8 μm. Moreover, phase locking of two VCSELs separated by 20 μm is observed, indicating the possibility of a promising class of optical circuits based upon VCSELs that interact horizontally and emit vertically. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Buried laser waveguides in neodymium-doped BK-7 by K+–Na+ ion-exchange across a direct-bonded interface

Corin B. E. Gawith, Tajamal Bhutta, David P. Shepherd, Ping Hua, Ji Wang, Graeme W. Ross, and Peter G. R. Smith

Appl. Phys. Lett. 75, 3757 (1999); http://dx.doi.org/10.1063/1.125446 (3 pages) | Cited 7 times

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We report a technique for producing single-step buried K+–Na+ ion-exchanged waveguide lasers in neodymium doped BK-7. Direct bonding is the basis for this process, providing atomic contact between two chemically modified BK-7-type substrates followed by a 350 °C treatment suitable for simultaneous annealing and intersubstrate ion exchange. Characterization of a 6 mm long device was performed using a Ti:sapphire laser operating at 808 nm. The resultant laser output exhibited TE polarized single-spatial-mode operation with losses of <0.4 dB cm−1 and a maximum output power of 8.5 mW for 249 mW of absorbed pump power. © 1999 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Ce Glasses, quartz
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
42.86.+b Optical workshop techniques
42.60.By Design of specific laser systems
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions

Observation of dark-pulse formation in gain-clamped semiconductor optical amplifiers by cross-gain modulation

P. E. Selbmann, T. P. Hessler, J. L. Pleumeekers, M.-A. Dupertuis, B. Deveaud, B. Dagens, and J.-Y. Emery

Appl. Phys. Lett. 75, 3760 (1999); http://dx.doi.org/10.1063/1.125447 (3 pages) | Cited 8 times

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We have measured the ultrafast simultaneous cross-gain and laser mode dynamics in a gain-clamped semiconductor amplifier perturbed by an intense detuned 150 fs pump pulse. Besides relaxation oscillations, we demonstrate the instantaneous formation of a dark pulse in the laser mode that repeats itself with a period given by the cavity round-trip time. The dark pulse sequence subsequently decays into two-mode beating and is shown to weakly cross modulate the amplifier gain. To describe dark-pulse formation a time- and spatially dependent model based on rate equations is necessary. The experimental results are in reasonable agreement with numerical simulations. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system

C. Roux, E. Hadji, and J.-L. Pautrat

Appl. Phys. Lett. 75, 3763 (1999); http://dx.doi.org/10.1063/1.125448 (3 pages) | Cited 7 times

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We present results of a midinfrared vertical-cavity surface-emitting laser operating at 2.63 μm made of CdHgTe alloys. The resonator is constituted of two dielectric YF3/ZnS mirrors deposited after growth and after removal of the substrate. The top mirror reflectivity is increased step by step by deposition of an additional stack period allowing us to study the effect of mirror loss on lasing properties. With a reflectivity of 98.1% lasing is observed up to 190 K. The pulsed threshold power is 1.7 kW/cm2 at 80 K. The characteristic temperature is T0 = 113 K. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors

Resputtering during the growth of pulsed-laser-deposited metallic films in vacuum and in an ambient gas

S. Fähler, K. Sturm, and H.-U. Krebs

Appl. Phys. Lett. 75, 3766 (1999); http://dx.doi.org/10.1063/1.125449 (3 pages) | Cited 20 times

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To determine the effective sputter yield during pulsed-laser deposition a method by measuring the deposition rate on tilted substrates is proposed. Under vacuum conditions, sputter yields of up to 0.17 and 0.55 were found at a laser fluence of 4.5 J/cm2 for Fe and Ag, respectively. These strong resputtering effects are induced by the large fraction of energetic ions occurring during deposition. With decreasing laser fluence or increasing Ar gas pressure, the sputter yields are reduced due to a decrease of the kinetic energy of the ions. For the deposition of stoichiometric films, an optimum Ar partial pressure of about 0.04 mbar exists, where the deposition rate is highest and the sputter yield is reduced. © 1999 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.Nq Composition and phase identification
81.05.Bx Metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Surface-emitting 10.1 μm quantum-cascade distributed feedback lasers

Daniel Hofstetter, Jérôme Faist, Mattias Beck, and Ursula Oesterle

Appl. Phys. Lett. 75, 3769 (1999); http://dx.doi.org/10.1063/1.125450 (3 pages) | Cited 39 times

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We present measurement results on a surface-emitting quantum-cascade distributed feedback laser emitting infrared radiation at 10.1 μm. The use of a second order grating enabled the laser to emit about 25% of its total optical power from the grating. The beam radiated from the grating was at a very low divergence angle of about 1°×14°. As already presented in a previous paper, we simplified the processing by using a lateral current injection scheme avoiding epitaxial regrowth. At 85 K, the laser emitted 210 and 60 mW of pulsed power from facet and grating, respectively; at room temperature, the corresponding numbers were 70 and 18 mW. Threshold current densities of 2.1 kA/cm2 at 85 K and 5.6 kA/cm2 at room temperature were observed. The device showed single mode behavior for the entire temperature range and all investigated power levels. In addition, a constant temperature tuning coefficient of 0.06 cm−1/K was seen. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.40.Eq Holographic optical elements; holographic gratings

Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna

O. Morikawa, M. Tonouchi, and M. Hangyo

Appl. Phys. Lett. 75, 3772 (1999); http://dx.doi.org/10.1063/1.125451 (3 pages) | Cited 24 times

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A system for measuring transmittance of electromagnetic waves in the sub-THz region is proposed. The electromagnetic radiation is generated by the excitation of a photoconductive antenna with a commercially available multimode laser diode. The spectral coverage of the radiation is increased by defocusing the light spot on the photoconductive antenna. Transmitted radiation is detected by a hot-electron bolometer through a Martin–Puplett-type interferometer. Transmittance is measured for n-type Si wafers with various doping levels. The carrier densities calculated from the transmittance agree well with those obtained from the dc conductivity measurement. © 1999 American Institute of Physics.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.62.Fi Laser spectroscopy
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.30.+q High-frequency effects; plasma effects
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High-density transition layer in oxynitride interfaces on Si(100)

J. Wang, D. R. Lee, C. Park, Y. H. Jeong, K.-B. Lee, Y. J. Park, S. B. Youn, J.-C. Park, H. M. Choi, and Y.-J. Huh

Appl. Phys. Lett. 75, 3775 (1999); http://dx.doi.org/10.1063/1.125452 (3 pages) | Cited 5 times

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Nitrided SiO2 thin films on Si wafers were studied by x-ray reflectivity measurements and their electron-density profiles were evaluated. Interfacial layers of the oxides were found to have densities higher than that of either crystalline Si substrates or strained interfacial layers of thermal oxides. The high density probably results from nitrogen incorporation near the interfaces. The present results suggest that strongly retarded boron penetration through nitrided gate oxides is due to their high-density interfacial layers. © 1999 American Institute of Physics.
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68.35.Ct Interface structure and roughness
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode

Alexander M. Streltsov, K. D. Moll, Alexander L. Gaeta, P. Kung, D. Walker, and M. Razeghi

Appl. Phys. Lett. 75, 3778 (1999); http://dx.doi.org/10.1063/1.125453 (3 pages) | Cited 24 times

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We characterize the performance of a GaN p-i-n photodiode as a nonlinear sensor for second- and third-order femtosecond pulse autocorrelation measurements in the visible and near-infrared regimes, respectively. The two- and three-photon absorption coefficients for GaN are also determined. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.40.+w Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures

I. A. Buyanova, W. M. Chen, B. Monemar, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 75, 3781 (1999); http://dx.doi.org/10.1063/1.125454 (3 pages) | Cited 35 times

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The effect of growth temperature on the optical properties of GaAs/GaNxAs1−x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (>3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Nn Stacking faults and other planar or extended defects

Surface reconstruction of TiC(001) and its chemical activity for oxygen

H. Kuramochi, K. Takami, A. Saito, Y. Kuwahara, Y. Mori, S. Otani, and M. Aono

Appl. Phys. Lett. 75, 3784 (1999); http://dx.doi.org/10.1063/1.125455 (3 pages) | Cited 1 time

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The TiC(001) surface has been observed by scanning tunneling microscopy with atomic resolution in ultrahigh vacuum. After the sample was cleaned by repeated heating at ∼1300 °C, we observed the 1×1 structure. On the other hand, the √×√ structure due to the ordered carbon vacancies formed when the sample was annealed at ∼1150 °C. We demonstrated the chemical activity of carbon vacancies of both structures for oxygen. The TiC(001)-1×1 surface with intentionally increased carbon vacancies and the TiC(001)-√×√ surface changed to a defect-free 1×1 structure with a small amount of oxygen, owing to the preferential adsorption of oxygen on the carbon vacancies. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.Rh Phase transitions and critical phenomena
81.65.Cf Surface cleaning, etching, patterning
61.72.J- Point defects and defect clusters

Quantized conductance of multiwalled carbon nanotubes

P. Delaney, M. Di Ventra, and S. T. Pantelides

Appl. Phys. Lett. 75, 3787 (1999); http://dx.doi.org/10.1063/1.125456 (3 pages) | Cited 21 times

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We report calculations of the transport properties of multiwalled carbon nanotubes based on a scattering-theoretic approach that takes into account scattering within each tube, between tubes, and at the metal contacts. We find that only the outer tube contributes to the conductance, as has been implied by experiments. Referring to experiments performed with liquid-metal contacts, we also explain why the measured conductance is close to an integer number of conductance quanta, when the tubes are immersed in the liquid metal for several hundreds of nanometers and is not an integer when they are immersed for only a few nanometers. Finally, we propose that the observed conductance of only one quantum (instead of the expected two quanta) is due to intertube interactions. © 1999 American Institute of Physics.
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72.80.Rj Fullerenes and related materials
73.61.Wp Fullerenes and related materials
71.20.Tx Fullerenes and related materials; intercalation compounds

Crystallographic study of electromigration failure sites in submicron Al(Cu) interconnects

X. Chu, J. A. Prybyla, S. K. Theiss, and M. A. Marcus

Appl. Phys. Lett. 75, 3790 (1999); http://dx.doi.org/10.1063/1.125457 (3 pages) | Cited 3 times

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Crystallographic grain orientations at a large number of electromigration failure sites in Al(Cu) interconnects have been measured and compared to the grain orientations away from failure sites. Electron backscattered diffraction analysis reveals a preferred in-plane orientation at failure sites. © 1999 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
68.55.-a Thin film structure and morphology

Electron-beam induced growth of Cu nanoparticles in silica glass matrix

Y. Ito, H. Jain, and D. B. Williams

Appl. Phys. Lett. 75, 3793 (1999); http://dx.doi.org/10.1063/1.125458 (3 pages) | Cited 8 times

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The growth of nanometer-scale Cu metal particles in an amorphous SiO2 film was observed under a finely focused, intense electron beam in a dedicated scanning transmission electron microscope. Annular dark-field images show that the particle illuminated by the beam grows at the expense of surrounding Cu particles. Electron energy-loss spectroscopy was used for identifying the oxidation states of particles containing Cu atoms. An electric-field induced diffusion model explains the growth of metal particles in a dielectric medium. © 1999 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Bx Metals, semimetals, and alloys
61.80.Fe Electron and positron radiation effects
61.82.Bg Metals and alloys
79.20.Kz Other electron-impact emission phenomena
66.30.Qa Electromigration

Smoothening transition during initial epitaxial growth of Mo on sapphire

P. A. Ryan and F. Tsui

Appl. Phys. Lett. 75, 3796 (1999); http://dx.doi.org/10.1063/1.125459 (3 pages) | Cited 3 times

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The initial epitaxial growth of Mo (111) on Al2O3 (0001) substrates has been studied systematically as a function of growth temperature and rate, using real-time reflection high energy electron diffraction (RHEED) and in situ scanning probe microscopy. The evolution of RHEED specular intensity during Mo growth exhibits a distinct peak at Mo coverage of ∼10 Å, where the Mo surface is the smoothest. The observed Mo coverage at the specular peak is independent of growth temperature and rate, indicating that it is energetically stable. However, our findings reveal that surface kinetics plays a key role in determining the observed behavior. At each growth temperature, the highest specular intensity occurs at an optimum growth rate, at which the Mo surface is the smoothest. The temperature dependence of the optimum rate has an Arrhenius form indicating that the observed behavior is an activated process. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
81.05.Bx Metals, semimetals, and alloys

Size dependence of the energy relaxation in silver nanoparticles embedded in dielectric matrices

V. Halté, J.-Y. Bigot, B. Palpant, M. Broyer, B. Prével, and A. Pérez

Appl. Phys. Lett. 75, 3799 (1999); http://dx.doi.org/10.1063/1.125460 (3 pages) | Cited 35 times

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The electron dynamics is studied in silver nanoparticles of different sizes embedded either in a silicate glass or in a porous alumina matrix, using time-resolved optical spectroscopy. The femtosecond pump–probe measurements, made under various conditions of excitation, reveal that the energy relaxation is faster as the particle size decreases. For particles with identical size and excitation conditions, the relaxation time is found to be faster for clusters in the alumina matrix. The influence of the surface acoustic modes and of the heat conductivity of the matrix on the energy relaxation is discussed. © 1999 American Institute of Physics.
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78.66.Vs Fine-particle systems
78.47.-p Spectroscopy of solid state dynamics
72.15.Lh Relaxation times and mean free paths
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation

D. Z. Chi, S. Ashok, and D. Theodore

Appl. Phys. Lett. 75, 3802 (1999); http://dx.doi.org/10.1063/1.125461 (3 pages)

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The interstitial-type nature of electrically active defects observed in surface pre-amorphized and subsequently annealed p-type Si is established by comparing the thermal evolution of electrically active defects for rapid thermal anneals (RTA) with/without titanium films. Detailed analyses of the deep level transient spectroscopy (DLTS) and transmission electron microscopy results suggest that some of these defects are small interstitial clusters. The results of this study also suggest that the release of self-interstitials from EOR extended defects and their subsequent diffusion into bulk are involved in the formation of the hole trap levels observed after high temperature RTA anneals. The observation of the complete elimination of the implantation-induced electrically active defects by concurrent RTA Ti-silicidation should be of interest to silicon microelectronic technology since it demonstrates the possibility of eliminating implantation induced defects using low thermal budget. © 1999 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Nn Stacking faults and other planar or extended defects
61.72.J- Point defects and defect clusters

SiO2/TiO2 omnidirectional reflector and microcavity resonator via the sol-gel method

Kevin M. Chen, Andrew W. Sparks, Hsin-Chiao Luan, Desmond R. Lim, Kazumi Wada, and Lionel C. Kimerling

Appl. Phys. Lett. 75, 3805 (1999); http://dx.doi.org/10.1063/1.125462 (3 pages) | Cited 51 times

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Thin films of SiO2 and TiO2 were used to fabricate one-dimensional photonic crystal devices using the sol-gel method: an omnidirectional reflector and microcavity resonator. The reflector consisted of six SiO2/TiO2 bilayers, designed with a stopband in the near infrared. Reflectivity over an incident angle range of 0°–80° showed an omnidirectional band of 70 nm, which agrees with theoretical predictions for this materials system. The microcavity resonator consisted of a TiO2 Fabry–Perot cavity sandwiched between two SiO2/TiO2 mirrors of three bilayers each. We have fabricated a microcavity with resonance at λ=1500 nm and achieved a quality factor of Q = 35. We measured a resonance frequency modulation with a change in incident angle of light and defect layer thickness. © 1999 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Wc Optical coatings
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Hp Optical processors, correlators, and modulators
42.86.+b Optical workshop techniques
78.66.Nk Insulators

Growth and physical properties of epitaxial metastable cubic TaN(001)

C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, J. E. Greene, and M. Odén

Appl. Phys. Lett. 75, 3808 (1999); http://dx.doi.org/10.1063/1.125463 (3 pages) | Cited 22 times

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We report the growth of epitaxial metastable B1 NaCl structure TaN(001) layers. The films were grown on MgO(001) at 600 °C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N2 discharges maintained at 20 mTorr (2.67 Pa). X-ray diffraction and transmission electron microscopy results establish the epitaxial relationship as cube-on-cube, (001)TaN∥(001)MgO with [100]TaN∥[100]MgO, while Rutherford backscattering spectroscopy shows that the layers are overstoichiometric with N/Ta=1.22±0.02. The room-temperature resistivity is 225 μΩ cm with a small negative temperature dependence between 20 and 400 K. The hardness and elastic modulus, as determined by nanoindentation measurements, are 30.8±0.9 and 457±16 GPa, respectively. © 1999 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Bs Mechanical and acoustical properties
81.15.Cd Deposition by sputtering
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.35.Gy Mechanical properties; surface strains
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.55.-a Thin film structure and morphology
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Sk Insulators
73.61.Ng Insulators

Evolution of residual stress in plasma-enhanced chemical-vapor-deposited silicon dioxide film exposed to room air

Youngsoo Park, June Key Lee, Ilsub Jung, Soo-Bong Heo, and Jai-Young Lee

Appl. Phys. Lett. 75, 3811 (1999); http://dx.doi.org/10.1063/1.125464 (3 pages) | Cited 11 times

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Considerable increase in compressive stress was observed in silicon dioxide films upon prolonged exposure to atmospheric moisture. The compressive stress change upon exposure to atmosphere consisted of a reversible change and an irreversible change. The irreversible component was found to be due to structural changes in the Si–O–Si network. The reversible change in stress is due to water molecules absorbed on walls of the pores. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
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