APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Dec 1999

Volume 75, Issue 24, pp. 3739-3886

Page 2 of 2 Pages Previous Page | Jump to Page
back to top
RSS Feeds

Near-field photoconductivity of stretch-oriented poly(para-phenylene vinylene)

J. A. DeAro, D. Moses, and S. K. Buratto

Appl. Phys. Lett. 75, 3814 (1999); http://dx.doi.org/10.1063/1.125465 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Near-field scanning optical microscopy (NSOM) with photoconductivity contrast is used to map the transport properties of stretch-oriented poly(p-phenylene vinylene) thin films on a 150 nm length scale. Near-field photoconductivity is highly sensitive to film morphology and contrast is observed even in films with uniform photoluminescence. Regions of relatively higher photocurrent signals are correlated to regions with higher molecular order which have contrast approaching 15%. In addition, the photocurrent signal decreases sharply as the near-field tip approaches the surface of the film while at the same time the photoluminescence signal increases. The sharp decrease is attributed to the perturbation of the applied electric field within the polymer film by the metal on the NSOM tip. © 1999 American Institute of Physics.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Heteroepitaxial electrodeposition of zinc oxide films on gallium nitride

Th. Pauporté and D. Lincot

Appl. Phys. Lett. 75, 3817 (1999); http://dx.doi.org/10.1063/1.125466 (3 pages) | Cited 103 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial zinc oxide films have been prepared on gallium nitride (0002) substrates by cathodic electrodeposition in an aqueous solution containing a zinc salt and dissolved oxygen at 85 °C. The films have the hexagonal structure with the c axis parallel to that of GaN and the [100] direction in ZnO parallel to the [100] direction in GaN in the (0002) basal plane. The structural quality is attested by the values of the full width at half maximum in θ/2θ x-ray diffraction (XRD) diagrams [0.07° for the (0002) peak] and in five circles XRD diagrams [0.74° for the ZnO (1011) planes compared to 0.47° for the GaN (1011) planes]. The morphology of the layers has been studied by scanning electron microscopy. Before coalescence, arrays of epitaxial single crystalline hexagonal columns are observed with a low dispersion in size, indicating instantaneous tridimensional nucleation. Preliminary results on luminescence properties of the films before and after annealing are presented. © 1999 American Institute of Physics.
Show PACS
81.05.Dz II-VI semiconductors
68.55.-a Thin film structure and morphology
81.15.Pq Electrodeposition, electroplating
73.61.Ga II-VI semiconductors
82.45.-h Electrochemistry and electrophoresis
back to top
RSS Feeds

Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

J. A. Smart, E. M. Chumbes, A. T. Schremer, and J. R. Shealy

Appl. Phys. Lett. 75, 3820 (1999); http://dx.doi.org/10.1063/1.125467 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using flow modulation organometallic vapor phase epitaxy, a process has been developed which produces epitaxial lateral overgrowth of GaN-base materials directly on SiC and sapphire substrates patterned with silicon nitride. The key feature of this single step process is the use of a high temperature AlGaN nucleation layer which wets the exposed substrate surface, without significant nucleation on the mask. This eliminates the need for regrowth while producing smooth growth surfaces in the window opening as well as over the mask. Subsequent GaN deposition results in relatively defect free materials grown laterally over the mask. Using arrays of stripe windows aligned parallel to the 〈1math00〉 crystal direction, the epitaxial films completely planarize after roughly 5 microns of growth. Defect densities estimated from atomic force micrographs indicate a reduction from mid 108 to 105 cm−2 in regions over the window and over the mask, respectively. This process represents a significant simplification over currently used regrowth methods for obtaining low defect density laterally overgrown GaN materials. © 1999 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.-y Defects and impurities in crystals; microstructure

Photovoltaic effect of cubic GaN/GaAs(100)

D. G. Zhao, D. S. Jiang, Hui Yang, L. X. Zheng, D. P. Xu, J. B. Li, and Q. M. Wang

Appl. Phys. Lett. 75, 3823 (1999); http://dx.doi.org/10.1063/1.125468 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He–Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 1014 and 1018 cm−3, respectively. © 1999 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2

J. Arokiaraj, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 75, 3826 (1999); http://dx.doi.org/10.1063/1.125469 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we demonstrate the realization of strong bonding between GaAs epilayers on Si substrates by using selenium sulphide (SeS2) compound. After bonding, the sample has been transplanted to Si substrate using the epitaxial lift-off process. Such a transplanted film was found to be very smooth and adhered well to Si. The resulting chemical bond was covalent in nature, robust, and withstood clean room processing steps. The film bonded in this manner exhibited very good photoluminescence and high crystal quality by double crystal x-ray diffraction. The double crystal x-ray diffraction had a low full width at half maximum of 44 arcsec, and the strain was absent in these types of heterostructures. The interfacial chemical reaction and bonding were studied by depth profile x-ray photoelectron spectroscopy. It was concluded that Ga–Se and Si–S phases such as Ga2Se3 and SiS2 were responsible for the strong bonding between GaAs and Si. © 1999 American Institute of Physics.
Show PACS
68.35.Ct Interface structure and roughness
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Cf Surface cleaning, etching, patterning
68.35.Gy Mechanical properties; surface strains
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Imaging near-contact transport in the planar-collector geometry for a Schottky contact on high-purity GaAs

K. A. Record, D. R. Palmieri, N. M. Haegel, and D. Wynne

Appl. Phys. Lett. 75, 3829 (1999); http://dx.doi.org/10.1063/1.125470 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Variable temperature electron beam induced current (EBIC) and cathodoluminescence (CL) were combined to image electric fields and charge transport for a Schottky contact on high purity epitaxial GaAs in the planar-collector geometry. Simultaneous EBIC and CL imaging proves that the near-contact EBIC signal is dominated by depletion effects, even in material where the bulk diffusion length greatly exceeds the intercontact distance. In forward bias, an EBIC dipole is observed, providing direct spatial indication of the transition between drift and diffusion transport of locally generated charge. © 1999 American Institute of Physics.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
81.05.Ea III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.60.+g Mixed conductivity and conductivity transitions

Energy relaxation by photoexcited carriers in the InAs/GaAs quantum-dot system: Bolometric detection of strong acoustic-phonon emission

P. Hawker, A. J. Kent, and M. Henini

Appl. Phys. Lett. 75, 3832 (1999); http://dx.doi.org/10.1063/1.125471 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have used bolometric detection to observe directly the phonons emitted by photoexcited carriers in the InAs/GaAs self-organized quantum-dot system. We find that about 74% of the energy lost by carriers in the InAs dots and wetting layer is via emission of low-frequency acoustic phonons and argue that this is facilitated by Auger scattering. © 1999 American Institute of Physics.
Show PACS
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.K- Phonon interactions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Localized states at InGaN/GaN quantum well interfaces

L. J. Brillson, T. M. Levin, G. H. Jessen, and F. A. Ponce

Appl. Phys. Lett. 75, 3835 (1999); http://dx.doi.org/10.1063/1.125472 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy of GaN/InGaN/GaN double-heterojunction structures reveal the formation of electronic states localized near the quantum well interfaces under relatively In-rich conditions. These states are due to formation in a cubic GaN region comparable to the quantum well layer in thickness rather than the bulk native defects typically associated with growth quality. The nanoscale depth dependence of the noncontact, nondestructive LEEN technique enables detection of this competitive recombination channel within a few nanometers of the “buried” heterojunction interfaces. © 1999 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Fz Weak or Anderson localization

Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells

Petr G. Eliseev, Marek Osin’ski, Hua Li, and Irina V. Akimova

Appl. Phys. Lett. 75, 3838 (1999); http://dx.doi.org/10.1063/1.125473 (3 pages) | Cited 25 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recombination balance parameters for GaN/InGaN/AlGaN single-quantum-well green-lightemitting diodes are extracted from optical power and carrier lifetime measurements. The radiative recombination coefficient B is found to depend on two-dimensional carrier density N, with a low-carrier-density limit of B0 = 1.2×10−4 cm2/s. Sublinearity of the light–current characteristic at temperatures ≥ 300 K is associated with a nonradiative process whose rate is proportional to ∼ N4.8. The external quantum efficiency of 5.5% at 20 mA results from the internal quantum yield of 63% and the photon extraction efficiency of 8.7%. At low temperatures, a nonradiative loss term proportional to ∼ N9 is also identified. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High fluence ultrafast dynamics of semiconductor saturable absorber mirrors

P. Langlois, M. Joschko, E. R. Thoen, E. M. Koontz, F. X. Kärtner, E. P. Ippen, and L. A. Kolodziejski

Appl. Phys. Lett. 75, 3841 (1999); http://dx.doi.org/10.1063/1.125474 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors are investigated using reflective pump–probe measurements. At high fluence, ultrafast induced absorption begins to dominate over absorption bleaching. Above the InGaAs quantum well band gap, the differential reflectivity shows a ∼1 ps transient due to nonequilibrium carrier dynamics. Below band gap, the signal is dominated by a strong two-photon absorption component followed by induced absorption that decays with a time constant of ∼5 ps; these components are attributed to nonlinear absorption and subsequent carrier diffusion in the InP layer. © 1999 American Institute of Physics.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Bh Lenses, prisms and mirrors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors

Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

L. S. Robertson, M. E. Law, K. S. Jones, L. M. Rubin, J. Jackson, P. Chi, and D. S. Simons

Appl. Phys. Lett. 75, 3844 (1999); http://dx.doi.org/10.1063/1.125475 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Amorphization of a n-type Czochralski wafer was achieved using a series of Si+ implants of 30 and 120 keV, each at a dose of 1×1015 cm2. The Si+ implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV 1×1014/cm2 B+. Postimplantation anneals were performed in a tube furnace at 750 °C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the EOR defect evolution. Upon annealing, the boron peak showed no clustering, and TED was observed in the entire boron profile. TEM results show that both {311} defects and dislocation loops were present in the EOR damage region. The majority of the {311} defects dissolved in the interval between 15 min and 2 h. Results indicate that {311} defects release interstitials during the time that boron exhibits TED. These results show that there is a strong correlation between {311} dissolution in the EOR and TED in the regrown silicon layer. Quantitative TEM of dislocation loop growth and {311} dissolution indicates that in addition to {311} defects, submicroscopic sources of interstitials may also exist in the EOR which may contribute to TED. © 1999 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Cc Kinetics of defect formation and annealing
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
back to top
RSS Feeds

Inverse giant magnetoresistance at room temperature in antiparallel biased spin valves and application to bridge sensors

C. H. Marrows, F. E. Stanley, and B. J. Hickey

Appl. Phys. Lett. 75, 3847 (1999); http://dx.doi.org/10.1063/1.125476 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a spin-engineering scheme whereby the sign of the giant magnetoresistance in an antiparallel biased spin valve may be selected by varying only layer thicknesses within the structure. The antiferromagnetic coupling in the biased layers leads to either positive exchange bias or positive magnetoresistance in the response of the structure. Hence, spin valves may be fabricated with either positive or negative sensitivities to applied fields in the same sense. When two spin valves of each type are connected in the appropriate Wheatstone bridge configuration, a sensor with four active legs may be constructed. The bias may be set by either the growth field, or by application of uniform field to the entire sensor structure in a single postprocessing anneal step. © 1999 American Institute of Physics.
Show PACS
75.47.De Giant magnetoresistance
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Et Exchange and superexchange interactions

Structure and magnetic properties of Pr2Co17−xMnx compounds

Zhi-gang Sun, Hong-wei Zhang, Jing-yun Wang, and Bao-gen Shen

Appl. Phys. Lett. 75, 3850 (1999); http://dx.doi.org/10.1063/1.125477 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structure and magnetic properties of Pr2Co17−xMnx (x = 0–14) compounds were studied. A single phase with the rhombohedral Th2Zn17-type structure was obtained from x-ray diffraction patterns for x = 0–11. The unit-cell volumes were found to increase linearly at a rate of about 5.7 Å3 per Mn atom. Both the Curie temperature and saturation magnetic moment at 5 K decrease monotonously with increasing Mn concentration. The spin reorientation was found in Pr2Co17−xMnx compounds for x = 1–5. The magnetic phase diagram of the compounds was given. A transition from ferromagnetic to antiferromagnetic for x = 8–9 was observed due to the Mn substitution. At high Mn concentration (x = 12,13,14), a rare-earth intermetallic 3:29 phase was found. This kind of 3:29 phase shows a paramagnetic character when the temperature is above 5 K. © 1999 American Institute of Physics.
Show PACS
75.50.Ww Permanent magnets
75.50.Cc Other ferromagnetic metals and alloys
61.66.Dk Alloys
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.20.En Metals and alloys

Enhanced intergrain tunneling magnetoresistance in double perovskite Sr2FeMoO6 polycrystals with nanometer-scale particles

C. L. Yuan, S. G. Wang, W. H. Song, T. Yu, J. M. Dai, S. L. Ye, and Y. P. Sun

Appl. Phys. Lett. 75, 3853 (1999); http://dx.doi.org/10.1063/1.125478 (3 pages) | Cited 61 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polycrystalline ordered double perovskite Sr2FeMoO6 bulk samples with grain size in the range of 29–45 nm have been synthesized at temperatures from 900 to 1000 °C, using a sol-gel method. We find that the intergrain magnetoresistance is closely correlated with the grain size. The sample with the grain size of 29 nm shows large magnetoresistance Δρ/ρ0, 30%–20% at a low magnetic field of 4 kG over a wide temperature range from 20 to 300 K. The results can be explained in terms of spin-dependent intergrain tunneling model. © 1999 American Institute of Physics.
Show PACS
75.47.Gk Colossal magnetoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
75.50.Dd Nonmetallic ferromagnetic materials
75.45.+j Macroscopic quantum phenomena in magnetic systems
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ch Domain walls and domain structure

Enhancement of magnetic coercivity and macroscopic quantum tunneling in monodispersed Co/CoO cluster assemblies

D. L. Peng, K. Sumiyama, T. Hihara, and S. Yamamuro

Appl. Phys. Lett. 75, 3856 (1999); http://dx.doi.org/10.1063/1.125479 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetic properties have been measured for monodisperse-sized Co/CoO cluster assemblies prepared by a plasma-gas-condensation-type cluster beam deposition technique. The clear correlation obtained between exchange bias field and coercivity suggests the enhancement of uniaxial anisotropy owing to the exchange coupling between the ferromagnetic Co core and antiferromagnetic CoO shell, and magnetic disorder at the core–shell interface. A nonthermal magnetic relaxation observed below 8 K, being referred to as macroscopic quantum tunneling of the magnetization, is ascribed to the enhanced uniaxial anisotropy. © 1999 American Institute of Physics.
Show PACS
75.50.Tt Fine-particle systems; nanocrystalline materials
75.45.+j Macroscopic quantum phenomena in magnetic systems
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.30.Et Exchange and superexchange interactions
75.50.Cc Other ferromagnetic metals and alloys
75.50.Ee Antiferromagnetics

Spin-wave quantization and dynamic coupling in micron-size circular magnetic dots

J. Jorzick, S. O. Demokritov, B. Hillebrands, B. Bartenlian, C. Chappert, D. Decanini, F. Rousseaux, and E. Cambril

Appl. Phys. Lett. 75, 3859 (1999); http://dx.doi.org/10.1063/1.125480 (3 pages) | Cited 39 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the observation of spin-wave quantization in square arrays of micron-size circular magnetic Ni80Fe20 dots by means of Brillouin light-scattering spectroscopy. For a large wave-vector interval several discrete, dispersionless modes with a frequency splitting of up to 2.5 GHz were observed. The modes are identified as magnetostatic surface spin waves laterally quantized due to in-plane confinement in each single dot. The frequencies of the lowest observed modes decrease with increasing distance between the dots, thus indicating an essential dynamic magnetic dipole interaction between the dots at small interdot distances. © 1999 American Institute of Physics.
Show PACS
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Bb Fe and its alloys
75.30.Ds Spin waves
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
75.70.Rf Surface magnetism

Fundamental limits to magnetic-field sensitivity of flux-gate magnetic-field sensors

R. H. Koch, J. G. Deak, and G. Grinstein

Appl. Phys. Lett. 75, 3862 (1999); http://dx.doi.org/10.1063/1.125481 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter we determine the theoretical limit of the magnetic-field sensitivity of the flux-gate magnetometer. In order to do so, we have developed a model for the white noise of a flux gate based on the fundamental dynamics of the magnetic material forming the flux-gate core. Solving this model, we predict that the white noise of a physically realizable flux gate with a volume of 2×10−8 m3 is less than 100 fT/math. The white noise varies with the lossy susceptibility of the core and inversely with the volume. We also compare the measured white noise of a thin-film flux gate with the predictions of our model and find that the measured and predicted noise agree reasonably well. © 1999 American Institute of Physics.
Show PACS
07.55.Ge Magnetometers for magnetic field measurements
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.70.Ay Magnetic device characterization, design, and modeling

Absolute measurement of penetration depth in a superconducting film by the two-coil technique

R. F. Wang, S. P. Zhao, G. H. Chen, and Q. S. Yang

Appl. Phys. Lett. 75, 3865 (1999); http://dx.doi.org/10.1063/1.125482 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A two-coil mutual-inductance apparatus that is optimized to allow for the measurement of the absolute value of penetration depth λ in superconducting films is described. Nb films with thickness d ranging from 20 to 90 nm are used to illustrate the measurement. For a 70-nm-thick Nb film at 4.2 K, with d/λ ∼ 0.6, the uncertainty in the measured λ is about ±2.3%. From the results on the Nb film series, we show that a satisfactory determination of the absolute value of λ is possible for these films with d/λ<0.95. © 1999 American Institute of Physics.
Show PACS
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
07.55.-w Magnetic instruments and components
back to top
RSS Feeds

Thermal conductivity and electromechanical property of single-crystal lead magnesium niobate titanate

Da-Ming Zhu and P. D. Han

Appl. Phys. Lett. 75, 3868 (1999); http://dx.doi.org/10.1063/1.125483 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thermal conductivity of a single-crystal lead magnesium niobate titanate-(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 with x = 0.34 has been studied at temperatures from 20 to 320 K and in an applied electric field. The thermal conductivity of the crystal is similar to that of a typical amorphous solid both in the temperature dependence and in magnitude. The electric field dependence of the thermal conductivity and strain show an abrupt change at about 15 kV/cm, which is interpreted as due to a field-induced phase transformation in the crystal. © 1999 American Institute of Physics.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects

Analysis of the stress-induced leakage current and related trap distribution

P. Riess, G. Ghibaudo, and G. Pananakakis

Appl. Phys. Lett. 75, 3871 (1999); http://dx.doi.org/10.1063/1.125484 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same amplitude of SILC for all oxide thicknesses at 6 MV/cm are measured. The analysis of these results, considering that the SILC is due to a trap-assisted tunneling mechanism, demonstrates that a uniform trap distribution throughout the oxide cannot explain the thickness dependence of the SILC, indicating that the trap distribution is an important feature in the understanding of the oxide thickness dependence of the SILC. © 1999 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals

Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

C. S. Ganpule, A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, R. Ramesh, V. Joshi, and Carlos Paz de Araujo

Appl. Phys. Lett. 75, 3874 (1999); http://dx.doi.org/10.1063/1.125485 (3 pages) | Cited 53 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1×1, 0.5×0.5, 0.25×0.25, 0.09×0.09, and 0.07×0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09×0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25×0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O3 system where structures as small as 0.07×0.07 μm2 were analyzed. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
81.20.Wk Machining, milling
back to top
RSS Feeds

On-chip frequency-domain submillimeter-wave transceiver

N. Zamdmer, Qing Hu, K. A. McIntosh, S. Verghese, and A. Förster

Appl. Phys. Lett. 75, 3877 (1999); http://dx.doi.org/10.1063/1.125486 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate and model an on-chip frequency-domain transceiver which uses low-temperature-grown GaAs photoconductors to emit and detect continuous waves in the frequency range from 20 to 700 GHz propagating in a coplanar waveguide circuit. Our device has a possible frequency resolution ( ∼ 1 MHz) that is about 103 times better than similar devices used for time-domain spectroscopy, and is therefore appropriate for high-resolution spectroscopy with a “lab-on-a-chip”-type integrated circuit. © 1999 American Institute of Physics.
Show PACS
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
84.40.Lj Microwave integrated electronics
84.40.Az Waveguides, transmission lines, striplines
85.60.-q Optoelectronic devices

Image force effects at contacts in organic light-emitting diodes

E. Tutiš, M.-N. Bussac, and L. Zuppiroli

Appl. Phys. Lett. 75, 3880 (1999); http://dx.doi.org/10.1063/1.125487 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of an image force on the barrier for the injection of the carrier from the electrode into the organic layer is shown to be essential for proper understanding of the metal/organic contact and, in particular, of recent results of internal photoemission experiments for metal/Alq3 interfaces. While the calculation presented does not depend on the details of the carrier transport in the organic layer, the resulting value of the injection barrier is expected to determine the conduction regime of the device. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
73.30.+y Surface double layers, Schottky barriers, and work functions
back to top
RSS Feeds

Alternative method for the activation and measurement of lateral forces using magnetically controlled atomic force microscopy

S. P. Jarvis, H. Tokumoto, H. Yamada, K. Kobayashi, and A. Toda

Appl. Phys. Lett. 75, 3883 (1999); http://dx.doi.org/10.1063/1.125488 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the use of a different design of atomic force microscope cantilever for the study of lateral forces during a tensile transition to contact. The design of the cantilever is based on a seesaw structure which maintains sufficiently high stiffness in the normal direction and lateral scanning direction to enable stability during tip–sample approach and subsequent lateral scanning. Dynamic measurements are made by a combination of magnetic and piezo lever activation. We utilize the resonance modes of the normal and lateral tip motion in order to minimize coupling between the two signals and to increase sensitivity. High-resolution images of a strontium titanate sample are simultaneously acquired in the normal and lateral dynamic modes, and show distinctly different contrast, indicating that indeed the two interactions can be measured independently. © 1999 American Institute of Physics.
Show PACS
07.10.Pz Instruments for strain, force, and torque
07.79.Lh Atomic force microscopes
07.79.Pk Magnetic force microscopes
back to top
RSS Feeds
FREE

Erratum: “LaNiO3 buffer layers for high critical current density YBa2Cu3O7−δ and Tl2Ba2CaCu2O8−δ films” [Appl. Phys. Lett. 75, 2479 (1999)]

C. M. Carlson, P. A. Parilla, M. P. Siegal, D. S. Ginley, Y.-T. Wang, R. D. Blaugher, J. C. Price, D. L. Overmyer, and E. L. Venturini

Appl. Phys. Lett. 75, 3886 (1999); http://dx.doi.org/10.1063/1.124249 (1 page)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
© 1999 American Institute of Physics.
Show PACS
74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
68.55.-a Thin film structure and morphology
99.10.Cd Errata
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close