APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Dec 1999

Volume 75, Issue 24, pp. 3739-3886

Return to All Sections
back to top
RSS Feeds

On-chip frequency-domain submillimeter-wave transceiver

N. Zamdmer, Qing Hu, K. A. McIntosh, S. Verghese, and A. Förster

Appl. Phys. Lett. 75, 3877 (1999); http://dx.doi.org/10.1063/1.125486 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate and model an on-chip frequency-domain transceiver which uses low-temperature-grown GaAs photoconductors to emit and detect continuous waves in the frequency range from 20 to 700 GHz propagating in a coplanar waveguide circuit. Our device has a possible frequency resolution ( ∼ 1 MHz) that is about 103 times better than similar devices used for time-domain spectroscopy, and is therefore appropriate for high-resolution spectroscopy with a “lab-on-a-chip”-type integrated circuit. © 1999 American Institute of Physics.
Show PACS
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
84.40.Lj Microwave integrated electronics
84.40.Az Waveguides, transmission lines, striplines
85.60.-q Optoelectronic devices

Image force effects at contacts in organic light-emitting diodes

E. Tutiš, M.-N. Bussac, and L. Zuppiroli

Appl. Phys. Lett. 75, 3880 (1999); http://dx.doi.org/10.1063/1.125487 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of an image force on the barrier for the injection of the carrier from the electrode into the organic layer is shown to be essential for proper understanding of the metal/organic contact and, in particular, of recent results of internal photoemission experiments for metal/Alq3 interfaces. While the calculation presented does not depend on the details of the carrier transport in the organic layer, the resulting value of the injection barrier is expected to determine the conduction regime of the device. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
73.30.+y Surface double layers, Schottky barriers, and work functions
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close