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13 Dec 1999

Volume 75, Issue 24, pp. 3739-3886

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Thermal conductivity and electromechanical property of single-crystal lead magnesium niobate titanate

Da-Ming Zhu and P. D. Han

Appl. Phys. Lett. 75, 3868 (1999); http://dx.doi.org/10.1063/1.125483 (3 pages) | Cited 9 times

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Thermal conductivity of a single-crystal lead magnesium niobate titanate-(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 with x = 0.34 has been studied at temperatures from 20 to 320 K and in an applied electric field. The thermal conductivity of the crystal is similar to that of a typical amorphous solid both in the temperature dependence and in magnitude. The electric field dependence of the thermal conductivity and strain show an abrupt change at about 15 kV/cm, which is interpreted as due to a field-induced phase transformation in the crystal. © 1999 American Institute of Physics.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects

Analysis of the stress-induced leakage current and related trap distribution

P. Riess, G. Ghibaudo, and G. Pananakakis

Appl. Phys. Lett. 75, 3871 (1999); http://dx.doi.org/10.1063/1.125484 (3 pages) | Cited 8 times

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The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same amplitude of SILC for all oxide thicknesses at 6 MV/cm are measured. The analysis of these results, considering that the SILC is due to a trap-assisted tunneling mechanism, demonstrates that a uniform trap distribution throughout the oxide cannot explain the thickness dependence of the SILC, indicating that the trap distribution is an important feature in the understanding of the oxide thickness dependence of the SILC. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals

Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

C. S. Ganpule, A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, R. Ramesh, V. Joshi, and Carlos Paz de Araujo

Appl. Phys. Lett. 75, 3874 (1999); http://dx.doi.org/10.1063/1.125485 (3 pages) | Cited 53 times

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Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1×1, 0.5×0.5, 0.25×0.25, 0.09×0.09, and 0.07×0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09×0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25×0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O3 system where structures as small as 0.07×0.07 μm2 were analyzed. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
81.20.Wk Machining, milling
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