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20 Dec 1999

Volume 75, Issue 25, pp. 3905-4030

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Reconstruction of the charge collection probability in a semiconductor device from the derivative of collection efficiency data

C. Donolato

Appl. Phys. Lett. 75, 4004 (1999); http://dx.doi.org/10.1063/1.125530 (3 pages) | Cited 3 times

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A method is presented for analyzing the charge collection efficiency data that are obtained by irradiating a semiconductor device with an electron beam at different energies, and measuring the induced current. The procedure uses the numerical derivative of the function Rη(R) (η is the collection efficiency and R the electron range), and allows a direct reconstruction of the depth distribution of the charge collection probability in the device. Examples of application of the method to simulated data and published measurements are described. © 1999 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
06.60.Mr Testing and inspecting procedures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Metal–insulator–metal injector for ballistic electron emission spectroscopy

R. Heer, D. Rakoczy, G. Ploner, G. Strasser, E. Gornik, and J. Smoliner

Appl. Phys. Lett. 75, 4007 (1999); http://dx.doi.org/10.1063/1.125520 (3 pages) | Cited 3 times

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We introduce a solid-state version of ballistic electron emission microscopy/spectroscopy (BEEM/BEES) on GaAs–AlGaAs heterostructures using a metal–insulator–metal (MIM) injector structure that replaces the tip of the scanning tunneling microscope (STM). In the present work, the MIM injector is realized by an Al–Al2O3–Al tunnel junction yielding an easy-to-fabricate three-terminal device for ballistic electron spectroscopy. The device principle is applied to several GaAs–AlGaAs structures. The barrier heights obtained from the onsets of the ballistic current spectra are in good agreement with self-consistent calculations as well as earlier experimental results achieved with STM-based BEES. © 1999 American Institute of Physics.
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68.37.Vj Field emission and field-ion microscopy
73.40.Rw Metal-insulator-metal structures
79.70.+q Field emission, ionization, evaporation, and desorption
73.20.-r Electron states at surfaces and interfaces
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electron drift mobility and electroluminescent efficiency of tris(8-hydroxyquinolinolato) aluminum

B. J. Chen, W. Y. Lai, Z. Q. Gao, C. S. Lee, S. T. Lee, and W. A. Gambling

Appl. Phys. Lett. 75, 4010 (1999); http://dx.doi.org/10.1063/1.125521 (3 pages) | Cited 58 times

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The electron drift mobility in films of tris(8-hydroxyquinolinolato) aluminum (Alq) deposited at different rates (0.2, 0.4, and 0.7 nm/s) on silicon has been determined by the time-of-flight technique. It has been found that the drift mobility of electrons in Alq increased by about two orders of magnitude as the deposition rate decreased from 0.7 to 0.2 nm/s. Further, the electron drift mobility in all Alq samples increased linearly with the square root of the applied electric field. Electroluminescent devices with a structure of indium tin oxide/α-naphthylphenylbiphenyl amine (NPB, 90 nm)/Alq (90 nm)/Mg:Ag were fabricated at different Alq deposition rates. The device efficiency was found to increase with increasing electron mobility in Alq. As the electron is the minority carrier in the present device, an increase in electron mobility in Alq would thus lead to an increase in device efficiency. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance
85.60.Jb Light-emitting devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Low-noise submillimeter-wave NbTiN superconducting tunnel junction mixers

Jonathan Kawamura, Jian Chen, David Miller, Jacob Kooi, Jonas Zmuidzinas, Bruce Bumble, Henry G. LeDuc, and Jeff A. Stern

Appl. Phys. Lett. 75, 4013 (1999); http://dx.doi.org/10.1063/1.125522 (3 pages) | Cited 36 times

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We have developed a low-noise 850 GHz superconductor–insulator–superconductor quasiparticle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of TRX = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high-gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2Δ/h ∼ 1.2 THz. © 1999 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
84.40.Az Waveguides, transmission lines, striplines
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Cp Josephson devices

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

P. B. Klein, J. A. Freitas, S. C. Binari, and A. E. Wickenden

Appl. Phys. Lett. 75, 4016 (1999); http://dx.doi.org/10.1063/1.125523 (3 pages) | Cited 67 times

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Deep traps responsible for current collapse phenomena in GaN metal–semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.55.Eq III-V semiconductors
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