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20 Dec 1999

Volume 75, Issue 25, pp. 3905-4030

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Low-dielectric-constant cross-linking polymers: Film electrets with excellent charge stability

Reinhard Schwödiauer, Gerhard S. Neugschwandtner, Simona Bauer-Gogonea, Siegfried Bauer, and Werner Wirges

Appl. Phys. Lett. 75, 3998 (1999); http://dx.doi.org/10.1063/1.125518 (3 pages) | Cited 19 times

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The cross-linking low-dielectric-constant polymers benzocyclobutene (BCB) and perfluorocyclobutene (PFCB) are identified as film electrets with excellent charge stability, comparable to the members of the polytetrafluoroethylene family. BCB and PFCB films can be easily prepared on substrates by spin coating. The onset of molecular motion at the high- and low-temperature glass-like transitions is revealed by dielectric dilatometry. BCB and PFCB electret films exhibit remarkable stability regarding both negative and positive charging. They enlarge the family of charge electrets and may thus become interesting for miniaturized electret devices. © 1999 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.22.Ej Polarization and depolarization
61.41.+e Polymers, elastomers, and plastics
65.40.De Thermal expansion; thermomechanical effects
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

T. M. Klein, D. Niu, W. S. Epling, W. Li, D. M. Maher, C. C. Hobbs, R. I. Hegde, I. J. R. Baumvol, and G. N. Parsons

Appl. Phys. Lett. 75, 4001 (1999); http://dx.doi.org/10.1063/1.125519 (3 pages) | Cited 104 times

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Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ∼3.5 nm Al2O3 films deposited by low temperature (<400 °C) chemical vapor deposition on Si(100). Narrow nuclear resonance and Auger depth profiles show similar Al profiles for thicker (∼18 nm) films. The Al profile obtained on the thin film is consistent with a thin aluminum silicate layer, consisting of Al–O–Si bond units, between the silicon and Al2O3 layer. Transmission electron microscopy shows evidence for a two-layer structure in Si/Al2O3/Al stacks, and x-ray photoelectron spectroscopy shows a peak in the Si 2p region near 102 eV, consistent with Al–O–Si units. The silicate layer is speculated to result from reactions between silicon and hydroxyl groups formed on the surface during oxidation of the adsorbed precursor. © 1999 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology
79.60.Jv Interfaces; heterostructures; nanostructures
79.20.Fv Electron impact: Auger emission
82.80.-d Chemical analysis and related physical methods of analysis
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