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20 Dec 1999

Volume 75, Issue 25, pp. 3905-4030

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Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

O. Brandt, R. Muralidharan, P. Waltereit, A. Thamm, A. Trampert, H. von Kiedrowski, and K. H. Ploog

Appl. Phys. Lett. 75, 4019 (1999); http://dx.doi.org/10.1063/1.125524 (3 pages) | Cited 51 times

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We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular-beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirements of high structural, morphological, optical, and electrical quality. The results demonstrate that molecular-beam epitaxy is a competitive technique for the growth of group-III nitrides. © 1999 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors

Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment

C. J. Hill, P. M. Bridger, G. S. Picus, and T. C. McGill

Appl. Phys. Lett. 75, 4022 (1999); http://dx.doi.org/10.1063/1.125525 (3 pages) | Cited 6 times

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The exact nature of the signal in scanning apertureless microscopy techniques is the subject of much debate. We have sought to resolve this controversy by carrying out simulations and experiments on the same structures. Simulations of a model of tip–sample coupling are shown to exhibit features that are in agreement with experimental observations at dimensions below the diffraction limit. The simulation of the optical imaging process is carried out using atomic force microscope data as a topographical template and a tip–sample dipole coupling model as the source of optical signal. The simulations show a number of key fingerprints including a dependence on the polarization of the external laser source, the size of the tip, and index of refraction of the sample being imaged. The experimental results are found to be in agreement with many of the features of the simulations. We conclude that the results of the dipole coupling theory agree qualitatively with experimental data and that apertureless microscopy measures optical properties, not just topography. © 1999 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)

WS2 nanotubes as tips in scanning probe microscopy

A. Rothschild, S. R. Cohen, and R. Tenne

Appl. Phys. Lett. 75, 4025 (1999); http://dx.doi.org/10.1063/1.125526 (3 pages) | Cited 39 times

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WS2 nanotubes a few microns long were attached to microfabricated Si tips and tested afterwards in an atomic force microscope by imaging a “replica” of high aspect ratio, i.e., deep and narrow grooves. These WS2 nanotube tips provide a considerable improvement in image quality for such structures when compared with commercial ultrasharp Si tips. The nanotube tip apex shape was extracted by blind reconstruction from an image of Ti spikes, showing a smooth cylindrical profile up to the end. © 1999 American Institute of Physics.
Show PACS
07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.05.Pj Image processing
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