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27 Dec 1999

Volume 75, Issue 26, pp. 4049-4210

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Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid

Cher-Liang Cha, Kheng-Chok Tee, Eng-Fong Chor, Hao Gong, Krishnamachar Prasad, Anthony J. Bourdillon, Alex See, Lap Chan, and Mike Myung-Ok Lee

Appl. Phys. Lett. 75, 4192 (1999); http://dx.doi.org/10.1063/1.125579 (3 pages)

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The operational reliability of ultrathin gate dielectrics in forthcoming metal–oxide–semiconductor field-effect transistors (MOSFETs) will be impaired if there is the occurrence of hot-carrier injection (HCI) into the gate across the gate dielectric. In this work, a method is proposed to mellow the undesired effects incurred by HCI in a n-type MOSFET (NMOSFET) via a reduction in its frequency. The method involves the powering of a polycrystalline silicon (polysilicon) solenoid at the same time when the gate and drain of transistors are powered. The localized magnetic field generated from the solenoid can impose a downward force (Hall effect) to counteract or compensate the upward driving force exerted on the energetic electrons reaching the drain by the applied gate voltage. Fewer electrons will be trapped and the quality, reliability, and lifetime of the device will improve as a consequence. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
77.55.-g Dielectric thin films
73.50.Fq High-field and nonlinear effects
84.32.Hh Inductors and coils; wiring
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Strain-balanced GaAsP/InGaAs quantum well solar cells

N. J. Ekins-Daukes, K. W. J. Barnham, J. P. Connolly, J. S. Roberts, J. C. Clark, G. Hill, and M. Mazzer

Appl. Phys. Lett. 75, 4195 (1999); http://dx.doi.org/10.1063/1.125580 (3 pages) | Cited 54 times

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A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on a GaAs substrate and equals a good GaAs cell in terms of power conversion efficiency. The cell design is presented together with measurements of the forward bias dark current density, quantum efficiency, and 3000 K light-IV response. Cell efficiencies under standard air mass (AM) 1.5 and AM 0 illumination are projected from experimental data and the suitability of this cell for enhancing GaInP/GaAs tandem cell efficiencies is discussed. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.60.Dw Photodiodes; phototransistors; photoresistors
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