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27 Dec 1999

Volume 75, Issue 26, pp. 4049-4210

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Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Baomin Xu, Ronald G. Polcawich, Susan Trolier-McKinstry, Yaohong Ye, L. Eric Cross, Jonathan J. Bernstein, and Raanan Miller

Appl. Phys. Lett. 75, 4180 (1999); http://dx.doi.org/10.1063/1.125575 (3 pages) | Cited 19 times

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The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
77.22.Ej Polarization and depolarization
07.10.Cm Micromechanical devices and systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films

V. Nagarajan, C. S. Ganpule, B. Nagaraj, S. Aggarwal, S. P. Alpay, A. L. Roytburd, E. D. Williams, and R. Ramesh

Appl. Phys. Lett. 75, 4183 (1999); http://dx.doi.org/10.1063/1.125576 (3 pages) | Cited 47 times

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The effect of heteroepitaxy-induced constraint on the structure and piezoelectric properties of the relaxor ferroelectric lead magnesium niobate–lead titanate (PMN–PT) were investigated. Relaxor PMN–PT epitaxial thin films with oxide electrodes were grown by pulsed-laser deposition on (100) LaAlO3 substrates. We observe a systematic decrease in the phase transition temperature (temperature at which a maximum in dielectric response occurs), from around 250 to around 60 °C as the relaxor thickness is increased from 100 to 400 nm. This is accompanied by an increase in the relative dielectric constant (ϵr), measured at room temperature and 10 kHz, from 300 to 2000. The piezoelectric coefficient d33 measured using a scanned probe microscope, increase by almost an order of magnitude with increasing film thickness. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)

Activation field and fatigue of (Pb, La)(Zr, Ti)O3 thin films

I-Wei Chen and Y. Wang

Appl. Phys. Lett. 75, 4186 (1999); http://dx.doi.org/10.1063/1.125577 (3 pages) | Cited 17 times

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For a class of (Pb, La)(Zr, Ti)O3 ferroelectric thin films, the Merz equation adequately describes the dynamics of switching resistance. A single parameter, activation field, can be used to relate the coercive field throughout the polarization fatigue process. We suggest that the increased switching resistance causes fatigue, and that it could originate from the dielectric degradation of the film. The constitutive equation for the coercive field and its correlation with the switchable polarization offer a tool for fatigue characterization and life prediction. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
62.20.M- Structural failure of materials
68.60.Bs Mechanical and acoustical properties

Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

A. T. Findikoglu, Q. X. Jia, C. Kwon, D. W. Reagor, G. Kaduchak, K. Ø. Rasmussen, and A. R. Bishop

Appl. Phys. Lett. 75, 4189 (1999); http://dx.doi.org/10.1063/1.125578 (3 pages) | Cited 1 time

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We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 106 V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. © 1999 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Gm Dielectric loss and relaxation
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