Ci and CiCs defects, created by proton irradiation of n-type, strain-relaxed, epitaxial Si1−xGex of 0.005 ⩽ x ⩽ 0.5, have been studied using deep-level transient spectroscopy (DLTS). The ionization enthalpies of the two defects relative to the conduction band edge, ΔH, are found to increase linearly with increasing Ge content. It is shown that the corresponding levels are not pinned to any of the band edges. Furthermore, it is shown that, for both defects, the slopes, δΔH/δx, as well as the full width at half maximum (FWHM) of the corresponding DLTS peaks, are similar. These observations are in agreement with conclusions deduced from previous electron-paramagnetic resonance (EPR) measurements in pure silicon, stating that, for both defects, the trapped electron is preferentially located at the Ci atom because of its larger electronegativity as compared to those of silicon and germanium. The anneal temperature of the Ci defect, and correspondingly the in-growth temperature of the CiCs complex, increase with increasing Ge content. This is equivalent to an increasing retardation of the diffusion of Ci in Si1−xGex with increasing Ge content. © 1999 American Institute of Physics.