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12 Jul 1999

Volume 75, Issue 2, pp. 151-304

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Chirp dependence in InGaAs/InAlAs multiple quantum well electro-absorptive modulators near polarization-independent conditions

M. Pamplona Pires, B. Yavich, and P. L. Souza

Appl. Phys. Lett. 75, 271 (1999); http://dx.doi.org/10.1063/1.124345 (3 pages) | Cited 8 times

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We study the dependence of the chirp parameter on heavy- and light-hole energy splitting by analyzing the change in the absorption curve of different InGaAs/InAlAs p-i-n multiple quantum well structures designed for use in amplitude modulators. We observe, for the transverse electric mode, a high chirp parameter for the sample whose fundamental transition involves the light hole, whereas for samples whose fundamental transition involves the heavy hole, the more polarization sensitive the samples are, the smaller the chirp parameter is. This indicates that it is not possible to have tensile strained InGaAs/InAlAs multiple quantum well structures for electro-absorptive modulators which are simultaneously chirp-free and polarization independent. © 1999 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Tunable, narrow, and directional luminescence from porous silicon light emitting devices

Selena Chan and Philippe M. Fauchet

Appl. Phys. Lett. 75, 274 (1999); http://dx.doi.org/10.1063/1.124346 (3 pages) | Cited 45 times

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Controlled room-temperature photoluminescence (PL) and electroluminescence (EL) from porous silicon (PSi) multilayer structures are achieved. The basic structure is composed of two PSi multilayer mirrors sandwiching a highly luminescent PSi film. This creates an active microcavity resonator, in which a significant PL and EL line narrowing is observed. EL from a microcavity resonator is shown to have a high angular concentration of the output emission (30° around the normal axis). A tunable and narrow EL device, from an all-PSi microcavity resonator is presented, which offers the possibility for high spectral purity, flat-panel displays. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.05.Rm Porous materials; granular materials
78.60.Fi Electroluminescence
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.60.Jb Light-emitting devices

A deep semiconductor defect with continuously variable activation energy and capture cross section

M. A. Lourenço, Wai Lek Ng, K. P. Homewood, and K. Durose

Appl. Phys. Lett. 75, 277 (1999); http://dx.doi.org/10.1063/1.124347 (3 pages) | Cited 3 times

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A deep level with a continuously varying activation energy and capture cross section has been observed in CdS/CdTe thin-film solar cells. Given that the activation energy and capture cross section of a level are usually considered to be a unique identifier or signature for a particular deep level, this has important implications for the application of deep-level transient spectroscopy and related techniques for the characterization of deep levels in this and similar systems. We believe this phenomenon explains the well-known but poorly understood efficacy of CdCl2 treatment for CdS/CdTe thin solar cells. © 1999 American Institute of Physics.
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71.55.Gs II-VI semiconductors
84.60.Jt Photoelectric conversion
73.61.Ga II-VI semiconductors

Proton-induced disorder in InP-based resonant tunneling diodes

E. M. Jackson, B. D. Weaver, A. C. Seabaugh, J. P. A. Van der Wagt, and E. A. Beam

Appl. Phys. Lett. 75, 280 (1999); http://dx.doi.org/10.1063/1.124348 (3 pages) | Cited 5 times

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We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×1014 H+/cm2. Proton fluences below about 1×1013 cm−2 have little effect on the resonant tunneling diode but higher fluences decrease the peak current and increase the valley current. We find that proton-induced changes in the operating parameters are qualitatively similar to the effects of doping the wells. © 1999 American Institute of Physics.
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85.30.Kk Junction diodes
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
73.61.Ey III-V semiconductors

Ballistic-electron-emission-spectroscopy detection of monolayer thickness fluctuations in a semiconductor heterostructure

D. K. Guthrie, P. N. First, T. K. Gaylord, E. N. Glytsis, and R. E. Leibenguth

Appl. Phys. Lett. 75, 283 (1999); http://dx.doi.org/10.1063/1.124349 (3 pages)

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Ballistic-electron-emission spectroscopy (BEES) is used to measure fluctuations in the thickness of buried Ga0.8Al0.2As layers. The device under measurement is a half-electron-wavelength Fabry–Perot filter that has been designed to have two quasibound states. By performing BEES at several different spatial locations and by utilizing the relationship between the thicknesses of the device layers and the location (in energy) of the quasibound states, single-monolayer variations are detected in the thicknesses of both the GaAs quantum well and the surrounding Ga0.8Al0.2As barriers. The lateral resolution is shown to be better than 20 nm. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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