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12 Jul 1999

Volume 75, Issue 2, pp. 151-304

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Self-assembling ferroelectric Na0.5K0.5NbO3 thin films by pulsed-laser deposition

Choong-Rae Cho and Alex Grishin

Appl. Phys. Lett. 75, 268 (1999); http://dx.doi.org/10.1063/1.124344 (3 pages) | Cited 65 times

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Highly [100]-axis oriented single-phase Na0.5K0.5NbO3 (NKN) thin films have been grown on polycrystalline Pt80Ir20 (Pt) and SiO2 (native oxide)/Si (111) substrates using KrF excimer laser ablation of a stoichiometric ceramic target. X-ray diffraction θ–2θ scan and rocking curve data are evidence of the strong effect of film self-assembling along the [100] direction regardless of the substrate texture. Furthermore, multiple-cell structuring along the polar axis has been observed in NKN films grown onto the Pt substrate. Ferroelectric measurements yield remnant polarization Pr of 10 μC/cm2 and spontaneous polarization Ps of 17.5 μC/cm2 at 80 kV/cm. The electrical resistivity of the Na0.5K0.5NbO3 film was in the order of 1010 Ω cm at 10 kV/cm. Dielectric permittivity ϵ′ and dissipation factor tan δ have been found to vary 480–440 and 0.028–0.024, respectively, in the frequency range 0.4–100 kHz. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
73.61.-r Electrical properties of specific thin films
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