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12 Jul 1999

Volume 75, Issue 2, pp. 151-304

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Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74, 3308 (1999)]

F. Boscherini, R. Lantier, A. Rizzi, F. D’Acapito, and S. Mobilio

Appl. Phys. Lett. 75, 304 (1999); http://dx.doi.org/10.1063/1.124355 (1 page)

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Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.20.-r Electron states at surfaces and interfaces
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
99.10.Cd Errata
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Erratum: “Negative capacitance of GaAs homojunction far-infrared detectors” [Appl. Phys. Lett. 74, 3167 (1999)]

A. G. U. Perera, W. Z. Shen, M. Ershov, H. C. Liu, M. Buchanan, and W. J. Schaff

Appl. Phys. Lett. 75, 304 (1999); http://dx.doi.org/10.1063/1.124356 (1 page)

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Abstract Unavailable
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.-r Electron states at surfaces and interfaces
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
99.10.Cd Errata
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