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12 Jul 1999

Volume 75, Issue 2, pp. 151-304

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Transmitted signal detection of optical disks with a superresolution near-field structure

Takashi Nakano, Akira Sato, Hiroshi Fuji, Junji Tominaga, and Nobufumi Atoda

Appl. Phys. Lett. 75, 151 (1999); http://dx.doi.org/10.1063/1.124302 (3 pages) | Cited 30 times

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We observed transmitted signals of phase change marks recorded in super-resolution near-field structure (super-RENS) disks under high speed disk rotation. The observed minimum mark size was 81 nm and the carrier to noise ratio was about 6 dB at a constant linear velocity of 4.8 m/s. The mark size was far beyond the diffraction limit of an optical pickup with a wavelength of 635 nm and a numerical aperture of 0.6. It was clear that near-field scattering actually occurred in super-RENS disks. © 1999 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks

AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

R. H. Horng, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin

Appl. Phys. Lett. 75, 154 (1999); http://dx.doi.org/10.1063/1.124303 (3 pages) | Cited 7 times

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An AlGaInP/AuBe/glass light-emitting diode (LED) was fabricated by a wafer bonding technique. The AlGaInP LED was grown on a temporary GaAs substrate by metalorganic vapor phase epitaxy. By bonding the AuBe/glass substrate on top of epitaxial layers, the temporary GaAs substrate was removed. The luminance of this wafer-bonded device is about 3050 cd/m2 (600 nm wavelength) at an operating current of 20 mA. It is about three times brighter than a conventional device with an absorbing GaAs substrate. This could be due to the fact that the AuBe/glass substrate serves as a reflective mirror, improving the light extraction efficiency. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors

Optical poling of azo-dye-doped thin films using an ultrashort pulse laser

Kenji Kitaoka, Jinhai Si, Tsuneo Mitsuyu, and Kazuyuki Hirao

Appl. Phys. Lett. 75, 157 (1999); http://dx.doi.org/10.1063/1.124304 (3 pages) | Cited 12 times

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DR1(4-[N-ethyl-N-(2-hydroxyethyl)]amino-4′-nitro-azobenzene)-doped poly(methyl methacrylate) and DR1-doped silica gel thin films were optically polarized by the coherent superposition of the 1500 nm fundamental and the 750 nm second-harmonic light of a 130 fs pulse laser. These films were successfully polarized and saturated in 2 min, despite the transparent seed beams’ wavelength for the dye. The mechanism of the optical poling likely occurred in such a way that a multiphoton absorption and a photoisomerization of DR1 induced a polarized structure in the films. © 1999 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift

High-quality near-field optical probes by tube etching

Raoul Stöckle, Christian Fokas, Volker Deckert, Renato Zenobi, Beate Sick, Bert Hecht, and Urs P. Wild

Appl. Phys. Lett. 75, 160 (1999); http://dx.doi.org/10.1063/1.124305 (3 pages) | Cited 116 times

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A method called tube etching for the fabrication of near-field optical probes is presented. Tip formation occurs inside a cylindrical cavity formed by the polymer coating of an optical fiber which is not stripped away prior to etching in hydrofluoric acid. The influence of temperature, etchant concentration, and fiber type on the tip quality is studied. A tip formation mechanism for the given geometry is proposed. The procedure overcomes drawbacks of the conventional etching techniques while still producing large cone angles: (i) tips with reproducible shapes are formed in a high yield, (ii) the surface roughness on the taper is drastically reduced, and (iii) the tip quality is insensitive to vibrations and temperature fluctuations during the etching process. After aluminum coating, optical probes with well-defined apertures are obtained. Due to the smooth glass surface the aluminum coating is virtually free of pinholes. © 1999 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning

Thermo-optically tuned cascaded polymer waveguide taps

John M. Taboada, Jeffery J. Maki, Suning Tang, Lin Sun, Dechang An, Xuejun Lu, and Ray T. Chen

Appl. Phys. Lett. 75, 163 (1999); http://dx.doi.org/10.1063/1.124306 (3 pages) | Cited 1 time

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Polymer thermo-optic-waveguide taps have a potential application as light routers for guided-wave optical interconnects involving cascaded fanouts. The taps can guide light from an optical bus bar and direct it into other devices in a switching/modulation network. Thermo-optic waveguide taps are designed and fabricated on silicon wafers using standard very large-scale integrated fabrication techniques. Coupling of light into an adjacent waveguide tap is observed to increase by 12.3% from 38.7% to 51.0% with the application of 34 mW of power. © 1999 American Institute of Physics.
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42.82.Ds Interconnects, including holographic interconnects
42.70.Jk Polymers and organics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities

Seongsik Chang, Nathan B. Rex, Richard K. Chang, Gabel Chong, and Louis J. Guido

Appl. Phys. Lett. 75, 166 (1999); http://dx.doi.org/10.1063/1.124307 (3 pages) | Cited 41 times

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We report optically pumped, pulsed lasing action in whispering-gallery modes of GaN microdisk cavities at room temperature. The microdisk structure was fabricated by reactive-ion etching a 2-μm-thick GaN epitaxial layer grown via metalorganic chemical vapor deposition. Below the lasing threshold, stimulated emission with superlinear pump-intensity dependence is observed. Spontaneous-to-stimulated emission transition occurs at a pump intensity that is 10× lower than that for a GaN sample without a cavity structure. Above the lasing threshold, the pump-intensity dependence is almost linear and gain pinning is observed. In addition, whispering-gallery modes are observed with the linewidth of individual peaks being as narrow as 0.1 nm. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
78.45.+h Stimulated emission

Demonstration of high-brightness-mode propagation in a compound waveguide structure

J. A. Patchell, F. P. Logue, J. O’Gorman, J. Hegarty, B. A. Usievich, and V. A. Sychugov

Appl. Phys. Lett. 75, 169 (1999); http://dx.doi.org/10.1063/1.124308 (3 pages)

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We demonstrate the existence of an unusual and useful high-brightness guided mode of a multimode AlGaAs/GaAs heterostructure compound slab waveguide. This mode has a narrow near-field single lobe confined to the low-index regions of the waveguide. This mode was selectively probed by optically exciting quantum wells optimally placed in the waveguide. By pumping in a stripe geometry, lasing is observed above a threshold of 80 kW/cm2 indicating efficient lasing in the highest-order waveguide mode. The near-field emission pattern of the waveguide was imaged to provide a direct measurement of the intensity profile of the higher-order mode. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Organic light-emitting diodes with a bipolar transport layer

Vi-En Choong, Song Shi, Jay Curless, Chan-Long Shieh, H.-C. Lee, Franky So, Jun Shen, and Jie Yang

Appl. Phys. Lett. 75, 172 (1999); http://dx.doi.org/10.1063/1.124309 (3 pages) | Cited 83 times

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A structure based on a bipolar transport/emitting layer is proposed and implemented for making organic light-emitting diodes. Compared to the conventional heterojunction organic light-emitting diodes, more than a factor of six improvement in device reliability (a projected operating lifetime of 70 000 h) is achieved in the structure. The significant improvement in device lifetime is attributed to the elimination of the heterointerface present in the conventional devices which greatly affects the device reliability. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Effect of depolarization of scattered evanescent waves on particle-trapped near-field scanning optical microscopy

Min Gu and Pu Chun Ke

Appl. Phys. Lett. 75, 175 (1999); http://dx.doi.org/10.1063/1.124310 (3 pages) | Cited 11 times

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The degree of polarization of the scattered evanescent wave is measured with a laser-trapped particle for different incident angles. It is found that depolarization under s polarized beam illumination is stronger than that under p polarized beam illumination. As a result, the contrast of the evanescent wave interference pattern imaged in a particle-trapped near-field scanning optical microscope is improved approximately by a factor of 3 with a parallel analyzer under s polarized beam illumination. The phase shift of scattered evanescent waves under s and p polarized beam illumination is determined from the measured evanescent wave interference pattern. © 1999 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang

Appl. Phys. Lett. 75, 178 (1999); http://dx.doi.org/10.1063/1.124311 (3 pages) | Cited 91 times

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InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm2 was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 μm laser diode at room temperature under pulsed operation. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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