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12 Jul 1999

Volume 75, Issue 2, pp. 151-304

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Boride-enhanced diffusion in silicon: Bulk and surface layers

N. E. B. Cowern, M. J. J. Theunissen, F. Roozeboom, and J. G. M. van Berkum

Appl. Phys. Lett. 75, 181 (1999); http://dx.doi.org/10.1063/1.124312 (3 pages) | Cited 20 times

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Epitaxial silicon boride layers, located at the surface or within the bulk of single-crystal silicon, give rise to enhanced diffusion of B during annealing. A submonolayer buried boride layer releases ≈0.4 interstitials per B atom in the layer, generating a transient diffusion enhancement in the range of 10–100 for several minutes at 900 °C. The resulting profile broadening is comparable to that caused by ion implantation damage. At the same temperature, surface boride layers generate a diffusion enhancement of ∼6, part of which arises from the B diffusion flux and part from the chemical influence of the boride layer. © 1999 American Institute of Physics.
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66.30.J- Diffusion of impurities
81.05.Cy Elemental semiconductors
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals

Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency

Minoru Fujii, Atsushi Mimura, Shinji Hayashi, and Keiichi Yamamoto

Appl. Phys. Lett. 75, 184 (1999); http://dx.doi.org/10.1063/1.124313 (3 pages) | Cited 49 times

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Photoluminescence (PL) from Si nanocrystals (nc-Si) dispersed in phosphosilicate glass thin films was studied. It was found that, at room temperature, the 1.4 eV PL due to the recombination of electron-hole pairs in nc-Si becomes intense as the P concentration increases. At low temperatures, an additional peak related to defects at interfaces between nc-Si and the matrix was observed at about 0.9 eV. In contrast to the 1.4 eV peak, the 0.9 eV peak became weaker with increasing P concentration and almost disappeared at a P concentration of 1.5 mol %. These results suggest that the number of interface defects decreases with increasing P concentration and that this decrease leads to an improvement of the band-edge PL of nc-Si. © 1999 American Institute of Physics.  
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78.55.Ap Elemental semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
72.80.Cw Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Self-waveguided blue light emission in p-sexiphenyl crystals epitaxially grown by mask-shadowing vapor deposition

Hisao Yanagi and Takayuki Morikawa

Appl. Phys. Lett. 75, 187 (1999); http://dx.doi.org/10.1063/1.124314 (3 pages) | Cited 81 times

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Highly polarized and self-waveguided blue light emission was observed in oriented organic crystals of p-sexiphenyl (6P). The 6P molecules were epitaxially grown in needlelike crystals with a submillimeter length by mask-shadowing vapor deposition on the KCl (001) surface. In the crystals, the molecular axes are oriented parallel to the [110] direction of the KCl substrate and perpendicular to the needle axis of the crystal. Under ultraviolet excitation, the blue light emission was confined within the crystal and self-waveguided along the needle axis with the transverse-electric mode, then radiated from the tips of the needles. This self-waveguided emission in the crystal was based on the uniaxially oriented transition dipoles which lay on the KCl surface and were aligned perpendicular to the needle axis in the crystal. © 1999 American Institute of Physics.
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78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
42.79.Gn Optical waveguides and couplers
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Observation of magneto-optical second-harmonic generation with surface plasmon excitation in ultrathin Au/Co/Au films

V. V. Pavlov, G. Tessier, C. Malouin, P. Georges, A. Brun, D. Renard, P. Meyer, J. Ferré, and P. Beauvillain

Appl. Phys. Lett. 75, 190 (1999); http://dx.doi.org/10.1063/1.124315 (3 pages) | Cited 13 times

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Magnetization-induced second-harmonic generation with surface plasmon excitation in an ultrathin Au/Co/Au multilayer structure has been investigated. The resonant coupling of surface plasmons with the fundamental light results in drastic changes of the second-harmonic intensity and a sign reversal of nonlinear magneto-optical effects. Model analysis of the observed phenomena is given on the basis of the multiple interference of interface nonlinear contributions calculated using the Green’s functions formalism. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
78.20.Ls Magneto-optical effects
75.70.Ak Magnetic properties of monolayers and thin films

Patterning of highly oriented pyrolytic graphite by oxygen plasma etching

Xuekun Lu, Hui Huang, Nikolay Nemchuk, and Rodney S. Ruoff

Appl. Phys. Lett. 75, 193 (1999); http://dx.doi.org/10.1063/1.124316 (3 pages) | Cited 46 times

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Patterning of highly oriented pyrolytic graphite (HOPG) was demonstrated by oxygen plasma etching of lithographically patterned substrates. Periodic arrays of islands, or holes of several microns on an edge, were obtained on freshly cleaved HOPG surfaces which had been prepared with SiO2 mask stops and then oxygen plasma etched. The etching process is described, including a study of etch rate as a function of rf power, and morphology was characterized with scanning electron microscopy. © 1999 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning

Pendeoepitaxy of gallium nitride thin films

Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis

Appl. Phys. Lett. 75, 196 (1999); http://dx.doi.org/10.1063/1.124317 (3 pages) | Cited 83 times

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Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (11math0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (11math0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Voltage modulation scanned probe oxidation

Francesc Pérez-Murano, Karen Birkelund, Kiyoshi Morimoto, and John A. Dagata

Appl. Phys. Lett. 75, 199 (1999); http://dx.doi.org/10.1063/1.124318 (3 pages) | Cited 44 times

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Scanned probe microscope (SPM) oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of pulse parameters and that voltage modulation overcomes the self-limiting character of SPM oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement can be used to increase the writing speed or lower the voltage, both beneficial for practical nanoelectronics fabrication. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.05.Cy Elemental semiconductors

Determination of nematic polar anchoring from retardation versus voltage measurements

Yu. A. Nastishin, R. D. Polak, S. V. Shiyanovskii, and O. D. Lavrentovich

Appl. Phys. Lett. 75, 202 (1999); http://dx.doi.org/10.1063/1.124319 (3 pages) | Cited 28 times

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The popular “high-electric-field” technique to determine the polar anchoring coefficient W of a nematic–substrate interface requires the simultaneous measurement of the capacitance and optical phase retardation of a liquid crystal cell as a function of applied voltage. We develop a generalized model that makes it possible to eliminate the capacitance measurement. The new technique, called the RV (retardation versus voltage) technique, requires only the measurement of retardation as a function of applied voltage, and allows for the determination of W by a linear fit over a prescribed voltage window. The technique is not sensitive to uniformity of the cell thickness, does not require patterned electrodes, and allows for the local probe of the surface. The value of W obtained by the RV technique is the same as W obtained by the traditional technique. © 1999 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Formation of epitaxially strained islands by controlled annealing

Y. W. Zhang

Appl. Phys. Lett. 75, 205 (1999); http://dx.doi.org/10.1063/1.124320 (3 pages) | Cited 5 times

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A three-dimensional continuum method is developed to simulate the formation of epitaxially strained islands during controlled annealing. In the formulation, the strain energy density, surface energy and surface energy anisotropy are taken into account. Our simulations show that no surface energy anisotropy leads to spherical caps while high anisotropy leads to elongated islands. Under the present framework, a relatively uniform and regular island array can be obtained at a certain annealing time from a random surface. An almost perfectly uniform and regular island array can be obtained at a certain annealing time from a random surface with one dominant wavelength, which is in a specific range; for long-time annealing, these island arrays are undergoing ripening. © 1999 American Institute of Physics.
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81.15.Aa Theory and models of film growth
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Cc Kinetics of defect formation and annealing
68.35.Md Surface thermodynamics, surface energies

Ultrafast carrier dynamics in germanium nanoparticles

P. Tognini, A. Stella, S. De Silvestri, M. Nisoli, S. Stagira, P. Cheyssac, and R. Kofman

Appl. Phys. Lett. 75, 208 (1999); http://dx.doi.org/10.1063/1.124321 (3 pages) | Cited 11 times

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It is shown that the ultrafast carrier dynamics in Ge nanoparticles involving the electronic density of states well above the gap can be separated in two regimes: a faster one (∼1 ps) characterized by bleaching of the absorption around 490 nm and a slower one (up to a few hundred picoseconds) governed by band gap renormalization. There is also a clear correspondence between the spectral response in both regimes and a bulk-like band structure for sizes below the exciton Bohr radius. Quantum confinement is manifested through the measurable blueshift of E1+Δ1 spectral structure in the ultrafast optical response. © 1999 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
78.66.Vs Fine-particle systems
78.66.Db Elemental semiconductors and insulators
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Contribution of atomic and molecular ions to dry-etch damage

L. G. Deng, M. Rahman, J. A. van den Berg, and C. D. W. Wilkinson

Appl. Phys. Lett. 75, 211 (1999); http://dx.doi.org/10.1063/1.124322 (3 pages) | Cited 3 times

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Using ions of low energy is accepted as an essential requirement in achieving low damage when dry-etching III–V semiconductors. SiCl4 is widely used to make GaAs electron devices. We have studied the effect of a SiCl4 reactive ion etching environment as well as the effect of the bombardment by the separate constituent ions from a SiCl4 discharge in a low-energy implanter. Photoluminescence intensity measurements from GaAs/AlGaAs quantum well probe structures have been used to study the damage inflicted. We find that molecular ions contribute less to deep damage than do atomic ions. Thus, low damage may be promoted by selecting reactive etch chemistries with low ion energies and small atomic to molecular ion fractions. © 1999 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.55.Cr III-V semiconductors
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