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19 Jul 1999

Volume 75, Issue 3, pp. 307-435

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Optically encoded second-harmonic generation in germanosilicate glass via a band-to-band excitation

Jinhai Si, Kenji Kitaoka, Tsuneo Mitsuyu, and Kazuyuki Hirao

Appl. Phys. Lett. 75, 307 (1999); http://dx.doi.org/10.1063/1.124358 (3 pages)

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Optically encoded second-harmonic generation was enhanced by irradiating the germanosilicate glass with a pump beam of wavelength of 355 nm along with preparation beams at frequencies ω and 2ω. The origin of this enhancement was investigated by measuring the absorption spectra before and after preparation. The results suggest that the enhancement effect is related to the creation of an electron trapped center (GEC: germanium electron center) via a band-to-band excitation. © 1999 American Institute of Physics.
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61.43.Fs Glasses
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
71.55.Ht Other nonmetals

GaAs/AlGaAs multiple-quantum-well in-line fiber intensity modulator

Erji Mao, Christopher W. Coldren, James S. Harris, Diego R. Yankelevich, Olav Solgaard, and André Knoesen

Appl. Phys. Lett. 75, 310 (1999); http://dx.doi.org/10.1063/1.124359 (3 pages) | Cited 4 times

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We demonstrate a GaAs/AlGaAs multiple-quantum-well in-line fiber optic intensity modulator. Based on evanescent wave coupling between a GaAs/AlGaAs multiple-quantum-well waveguide and a single-mode fiber, this device concept combines the inherent advantages of in-line fiber devices with high-speed GaAs integrated optoelectronics. The GaAs waveguide uses distributed Bragg mirror layers to phase match to the low-index fiber. Intensity modulation of the transmitted light through the fiber is achieved by tuning the effective propagation index of the GaAs waveguide via the quantum-confined Stark effect. Initial structures show a modulation contrast (ΔT/T) of more than 53%, with an applied voltage of 5 V. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.-q Optoelectronic devices
42.79.Hp Optical processors, correlators, and modulators
42.81.Wg Other fiber-optical devices
78.20.Jq Electro-optical effects

Wavelength-tunable actively mode-locked erbium-doped fiber ring laser using a distributed feedback semiconductor laser as mode locker and tunable filter

Shenping Li and K. T. Chan

Appl. Phys. Lett. 75, 313 (1999); http://dx.doi.org/10.1063/1.124360 (3 pages) | Cited 7 times

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A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a distributed feedback semiconductor laser as an intensity mode locker and a tunable optical filter. Very stable optical pulse trains at gigabit repetition rates were generated using harmonica mode locking. The supermode noise was suppressed to 60 dB below the signal level and the root-mean-square timing jitter (0.45 kHz–1 MHz) was found to be about 1% of the pulse duration. A continuous wavelength tuning range of 1.8 nm was achieved by changing the semiconductor laser temperature from 11.4 to 30 °C. © 1999 American Institute of Physics.  
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.79.Ci Filters, zone plates, and polarizers

Coherent two-dimensional lasing action in surface-emitting laser with triangular-lattice photonic crystal structure

Masahiro Imada, Susumu Noda, Alongkarn Chutinan, Takashi Tokuda, Michio Murata, and Goro Sasaki

Appl. Phys. Lett. 75, 316 (1999); http://dx.doi.org/10.1063/1.124361 (3 pages) | Cited 16 times

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Lasing action of a surface-emitting laser with a two-dimensional photonic crystal structure is investigated. The photonic crystal has a triangular-lattice structure composed of InP and air holes, which is integrated with an InGaAsP/InP multiple-quantum-well active layer by a wafer fusion technique. Uniform two-dimensional lasing oscillation based on the coupling of light propagating in six equivalent Γ−X directions is successfully observed, where the wavelength of the active layer is designed to match the folded (second-order) Γ point of the Γ−X direction. The very narrow divergence angle of far field pattern and/or the lasing spectrum, which is considered to reflect the two-dimensional stop band, also indicate that the lasing oscillation occurs coherently. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials

Spectral narrowing in a rhodamine-doped layered TiO2/surfactant thin film

Elias Stathatos, Panagiotis Lianos, and Stelios Couris

Appl. Phys. Lett. 75, 319 (1999); http://dx.doi.org/10.1063/1.124362 (3 pages)

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Spectral narrowing has been observed in the emission of a rhodamine-6G-doped layered TiO2/surfactant thin film by both visible and near-ultraviolet laser excitation. Narrowing threshold was extensively decreased by combining waveguide and scatter gain and by exploiting the self-organizing capacity of the surfactant molecules and the unusual optical matching between the TiO2 nanoparticle layer and the organic surfactant layer. © 1999 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.40.Me Organic compounds and polymers
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Organic multilayers as distributed Bragg reflectors

A. Convertino, A. Valentini, and R. Cingolani

Appl. Phys. Lett. 75, 322 (1999); http://dx.doi.org/10.1063/1.124363 (3 pages) | Cited 12 times

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We report on a distributed Bragg reflector (DBR) operating in the IR spectral region, based on a fluorocarbon polymer (CFx) multilayer. In this organic structure, the periodic variation of the refractive index is obtained by embedding gold clusters in the CFx, resulting in a periodic CFx/CFx(Au) layered structure with a refractive index discontinuity in the infrared spectral region of about Δn ∼ 0.4. We have fabricated a quarter-wavelength stack consisting of 4 CFx/CFx(Au) pairs, with a nominal Au concentration equal to 17%. The DBR shows a reflectance peak of about 70% at 1.7 μm and a full width at half maximum of about 0.4 μm. © 1999 American Institute of Physics.
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42.70.Jk Polymers and organics
42.79.Wc Optical coatings
78.66.Qn Polymers; organic compounds
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Red, green, and blue laser light from a single Nd:YAl3(BO3)4 crystal based on laser oscillation at 1.3 μm

D. Jaque, J. Capmany, and J. García Solé

Appl. Phys. Lett. 75, 325 (1999); http://dx.doi.org/10.1063/1.124364 (3 pages) | Cited 64 times

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Laser radiation corresponding to the three fundamental colors (red, green, and blue) has been generated from the same Nd:YAl3(BO3)4 crystal, operating on a fundamental laser wavelength of 1338 nm in an end-pumping configuration. Continuous wave generation was obtained by pumping with a tunable Ti: sapphire laser. Red (669 nm) has been obtained by self-frequency doubling of the fundamental laser line. Green (505 nm) and blue (481 nm) have been obtained by self-sum-frequency mixing of the fundamental laser radiation at 1338 nm and the pump radiation (807 nm for green and 755 nm for blue). © 1999 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
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Role of low-energy electrons in Ar emission from low-pressure radio frequency discharge plasma

S. A. Moshkalyov, P. G. Steen, S. Gomez, and W. G. Graham

Appl. Phys. Lett. 75, 328 (1999); http://dx.doi.org/10.1063/1.124365 (3 pages) | Cited 20 times

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Optical emission spectra from a low-pressure Ar plasma were studied with high spatial resolution. It has been shown that the intensity ratios of Ar lines excited through metastable levels to those excited directly from the ground state are sensitive to the shape of electron energy distribution function. From these measurements, important information on the spatial variation of plasma parameters can be obtained. © 1999 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Structure observed in measured electron energy distribution functions in capacitively coupled radio frequency hydrogen plasmas

C. M. O. Mahony, J. McFarland, P. G. Steen, and W. G. Graham

Appl. Phys. Lett. 75, 331 (1999); http://dx.doi.org/10.1063/1.124366 (3 pages) | Cited 15 times

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Electron energy probability functions measured with a passively compensated Langmuir probe in asymmetric capacitively coupled hydrogen and deuterium plasmas exhibit structure. The otherwise relatively continuous distribution appears to have an abrupt peak in electron density near 5 eV. This structure occurs at a higher energy in deuterium than hydrogen and there is a correlation between floating potential and the voltage at which the structure is observed in the second derivative of the I(V) characteristic. While the cause of the structure has yet to be clarified, spectroscopic observations and computer-based hydrogen models indicate that the high energy tail of the distribution is strongly modulated during the radio frequency cycle. The effect of this modulation on plasma properties and probe measurements has yet to be explored. © 1999 American Institute of Physics.
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52.20.Fs Electron collisions
52.70.Ds Electric and magnetic measurements
52.80.Pi High-frequency and RF discharges
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Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor

June Key Lee, Tae-Young Kim, Ilsub Chung, and Seshu B. Desu

Appl. Phys. Lett. 75, 334 (1999); http://dx.doi.org/10.1063/1.124367 (3 pages) | Cited 29 times

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The damage of Pb(Zr0.53Ti0.47)O3 thin film due to dry etching process was characterized in terms of the microstructure and electrical properties. The damaged layer seems to be amorphous and the thickness of the damaged layer is about 10 nm. The existence of such a layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor tends to increase the coercive voltage and the leakage current. The damaged layer was not fully reverted to perovskite phase by the thermal annealing. With the wet cleaning treatment, however, the damaged layer was successfully removed thereby revealing significantly improved electrical properties. © 1999 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.65.Cf Surface cleaning, etching, patterning

Morphology of InAs self-organized islands on AlAs surfaces

P. Ballet, J. B. Smathers, and G. J. Salamo

Appl. Phys. Lett. 75, 337 (1999); http://dx.doi.org/10.1063/1.124368 (3 pages) | Cited 28 times

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We report an in situ molecular-beam epitaxy-scanning tunneling microscopy study of three-dimensional (3D) self-organized InAs islands on AlAs surfaces. The evolution of the density and morphology of these islands is investigated as a function of the InAs coverage and substrate temperature. It is shown that the 2D island density is already high just prior to 3D island formation and remains constant for 3D structures as the InAs coverage is increased. This observation contrasts with the InAs/GaAs system and makes possible the growth of very high densities of small quantum dots. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Nanocrystalline composites with high strength obtained in Zr–Ti–Ni–Cu–Al bulk amorphous alloys

Cang Fan, Dmitri V. Louzguine, Chunfei Li, and Akihisa Inoue

Appl. Phys. Lett. 75, 340 (1999); http://dx.doi.org/10.1063/1.124254 (3 pages) | Cited 54 times

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Nanocrystalline composites with the grain size less than 10 nm were produced by annealing of Cu-mold cast Zr70−x−yTixNi10Cu20Aly (X = 5–7.5 and Y = 10–15 at %) bulk amorphous alloys. The nanostructured alloys show increased tensile strength at the volume fraction of nanoparticles less than 30%. The microstructure of the amorphous alloys was found to contain medium range order (MRO) domains, which uniformly distributed in the amorphous matrix. We suggest that MRO domains provide nucleation sites for precipitation of the primary crystals and lead to the formation of nanocrystalline composites. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.30.Bx Phase diagrams of metals, alloys, and oxides
81.40.Gh Other heat and thermomechanical treatments
81.40.Lm Deformation, plasticity, and creep
61.46.-w Structure of nanoscale materials
62.20.F- Deformation and plasticity

Azimuthal anchoring energy of a chiral nematic in cylindrical cavities

R. Aloe, I. Nicotera, and A. Golemme

Appl. Phys. Lett. 75, 343 (1999); http://dx.doi.org/10.1063/1.124369 (3 pages)

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We report on the determination of the azimuthal anchoring energy for a chiral nematic in elongated droplets obtained by phase separation in a polyvinylidene fluoride matrix. 2H-NMR techniques were used to establish the director configuration in samples with different chirality and different sizes of the quasicylindrical cavities. Minimization of the free energy, including surface, elastic, and field terms, allowed us to measure for the anchoring energy a value of Wφ ≈ 10−4 J/m2. © 1999 American Institute of Physics.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
65.20.-w Thermal properties of liquids
65.40.gd Entropy
76.60.-k Nuclear magnetic resonance and relaxation

Transmission electron microscopy investigation of Co thin films on GaAs(001)

M. A. Mangan, G. Spanos, T. Ambrose, and G. A. Prinz

Appl. Phys. Lett. 75, 346 (1999); http://dx.doi.org/10.1063/1.124370 (3 pages) | Cited 12 times

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Transmission electron microscopy (TEM) observations of the microstructure of epitaxial Co thin films on GaAs(001) are reported. Cross-sectional TEM confirmed both bcc-Co and hcp-Co exist in a single 345 Å film. During film growth by molecular beam epitaxy, the epitaxial bcc-Co layer forms first at the GaAs interface, and hcp-Co islands subsequently form at the free surface of the bcc-Co layer when it reaches a thickness of about 145 Å. The bcc-Co film is single crystal at early stages of growth, but later may develop into multiple bcc crystals. The final hcp-Co grain size is roughly 15–20 nm, and selected area electron diffraction showed these grains are strongly textured. Four previously unreported variants of the hcp-Co/GaAs orientation relationship were observed in which the c axis of the hcp unit cell lies out of the plane of the film.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates

Y. Xin, S. Rujirawat, N. D. Browning, R. Sporken, S. Sivananthan, S. J. Pennycook, and N. K. Dhar

Appl. Phys. Lett. 75, 349 (1999); http://dx.doi.org/10.1063/1.124371 (3 pages) | Cited 15 times

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The effect of As passivation of Si(111) substrates on the subsequent molecular beam epitaxial growth of CdTe(111) is investigated through a detailed comparison of the microstructures of two types of films. The film grown on a substrate treated with a Te flux is found to exhibit a rough film-substrate interface and has very poor crystalline quality with a (111)A orientation. In contrast, a CdTe film grown under identical conditions except for the Si substrate treated with an As flux is observed to have an atomically abrupt film-substrate interface and a single-domain structure in the technologically more relevant (111)B orientation. A growth mechanism for the formation of these high-quality single-domain CdTe(111)B films is proposed. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Rv Passivation

High-dose oxygen ion implantation into 6H-SiC

Manabu Ishimaru, Robert M. Dickerson, and Kurt E. Sickafus

Appl. Phys. Lett. 75, 352 (1999); http://dx.doi.org/10.1063/1.124372 (3 pages) | Cited 13 times

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Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650 °C to fluences of 0.7×1018 and 1.4×1018/cm2. A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. © 1999 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
68.35.Ct Interface structure and roughness

Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

Cher-Liang Cha, Eng-Fong Chor, Hao Gong, Anthony J. Bourdillon, Yu-Min Jia, Jin-Sheng Pan, An-Qing Zhang, and Lap Chan

Appl. Phys. Lett. 75, 355 (1999); http://dx.doi.org/10.1063/1.124373 (3 pages) | Cited 2 times

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The presence of large polysilicon grains and facetal growth in floating gate (polysilicon) of memory devices causes its surface to be rough, and degrades the quality of its interface with the adjacent interpoly dielectric. A simple and efficient solution has been proposed in this work. Via low-energy N2+ or Ar+ ion implantation into deposited polysilicon film, surface silicon nitride (SiNy) or silicon carbide (SiC) are formed and they act as nucleation centers to promote the growth of small surface grains during thermal processing. Smaller surface grains, a restriction of film facetal growth, a smoother polysilicon surface, and a better floating gate/interpoly dielectric interface are all achieved via such implantation. © 1999 American Institute of Physics.
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84.30.Sk Pulse and digital circuits
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Cw Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
81.40.Gh Other heat and thermomechanical treatments

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, and J. Ahopelto

Appl. Phys. Lett. 75, 358 (1999); http://dx.doi.org/10.1063/1.124374 (3 pages) | Cited 7 times

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We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors

Photoluminescence study of Cu diffusion and electromigration in CdTe

D. Grecu and A. D. Compaan

Appl. Phys. Lett. 75, 361 (1999); http://dx.doi.org/10.1063/1.124375 (3 pages) | Cited 23 times

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We report changes in the photoluminescence (PL) spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. We studied films grown by vapor transport deposition and radio-frequency sputtering as well as single-crystal CdTe. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy band due to deep acceptor states. The changes in junction PL are consistent with the movement of Cu+ ions in the electric fields near the CdS/CdTe junction. © 1999 American Institute of Physics.
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73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.J- Diffusion of impurities
66.30.Qa Electromigration
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses

D. C. Schmidt, B. G. Svensson, J. F. Barbot, and C. Blanchard

Appl. Phys. Lett. 75, 364 (1999); http://dx.doi.org/10.1063/1.124376 (3 pages) | Cited 1 time

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Platinum has been diffused into epitaxial n-type silicon at 700 °C from 10 to 50 min in steps of 10 min following implantation with 3.3 MeV alpha particles at a dose of 1×1013 cm−2. Thereafter, the samples were characterized using deep level transient spectroscopy (DLTS). All samples show only one deep level at 0.23 eV below the conduction band that is attributed to substitutional platinum. DLTS profiling reveals a decoration of the region of maximal damage by the platinum for diffusion times of 30 min or shorter with a platinum concentration peak in the region of the maximal vacancy concentration. However, for longer diffusion times, the peak of the platinum concentration decreases. An explanation is proposed where silicon self-interstitial clusters behind the projected range dissociate, and where the liberated self-interstitials will drive the platinum away from the region of maximal damage. In order to achieve an equilibrium distribution, the platinum then diffuses further into the bulk. © 1999 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters

Highly-ordered carbon nanotube arrays for electronics applications

J. Li, C. Papadopoulos, J. M. Xu, and M. Moskovits

Appl. Phys. Lett. 75, 367 (1999); http://dx.doi.org/10.1063/1.124377 (3 pages) | Cited 298 times

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Highly-ordered arrays of parallel carbon nanotubes were grown by pyrolysis of acetylene on cobalt within a hexagonal close-packed nanochannel alumina template at 650 °C. The nanotubes are characterized by a narrow size distribution, large scale periodicity, and high densities. Using this method ordered nanotubes with diameters from 10 nm to several hundred nm and lengths up to 100 μm can be produced. The high level of ordering and uniformity in these arrays is useful for applications in data storage, field emission displays and sensors, and offers the prospect of deriving computational functions from the collective behavior of symmetrically coupled nanotubes. The fabrication method used is compatible with standard lithographic processes and thus enables future integration of such periodic carbon nanotube arrays with silicon microelectronics. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
85.65.+h Molecular electronic devices
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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Study of strain in partially relaxed Ge epilayers on Si(100) substrate

Z. M. Jiang, C. W. Pei, X. F. Zhou, W. R. Jiang, B. Shi, X. H. Liu, Xun Wang, Q. J. Jia, W. L. Zheng, and X. M. Jiang

Appl. Phys. Lett. 75, 370 (1999); http://dx.doi.org/10.1063/1.124378 (3 pages) | Cited 5 times

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Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these Ge thin films are partially strained, and the strains decrease gradually with increasing epilayer thickness. Raman spectra reveal a downward shift of the Ge–Ge mode peak as the epilayer thickness increases. In the regions of high strain, the relationship between the Raman shift of this mode and the strain in the partially relaxed samples is considerably different from the linear relationship reported before, which is mainly attributed to the spatial confinement effect of phonons in a nanocrystal. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Am Elemental semiconductors and insulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction

R. N. Kyutt, A. A. Toropov, S. V. Sorokin, T. V. Shubina, S. V. Ivanov, M. Karlsteen, and M. Willander

Appl. Phys. Lett. 75, 373 (1999); http://dx.doi.org/10.1063/1.124379 (3 pages) | Cited 26 times

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We present x-ray diffraction studies of a CdSe distribution profile along the growth direction in CdSe/ZnSe submonolayer superlattices (SLs) grown by molecular beam epitaxy. The performed theoretical simulations show that the shape of both (004)- and (002)-reflection rocking curves is very sensitive to the vertical CdSe distribution around the intended deposition yplanes. In particular, broadening of the CdSe submonolayer insertions results in a decrease in SL (±1) and (±2) satellite intensities. Comparison of the simulations and experimental data allows us to conclude that CdSe sheets in the as-grown SL samples are asymmetrically broaden up to 5 monolayers. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Sz Deposition technology

Bipolar transport and charge-carrier generation in polymethylphenylsilane thin films containing diphenoquinone

Hiroyoshi Naito, Yoshikazu Ohsawa, and Shinya Mimura

Appl. Phys. Lett. 75, 376 (1999); http://dx.doi.org/10.1063/1.124380 (3 pages) | Cited 7 times

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Bipolar transient transport in polymethylphenylsilane (PMPS) thin films containing 3,5-dimethyl-3′,5′-di-tert-butyl-4,4′-diphenoquinone (MBDQ) has been studied with the standard time-of-flight experiment. It is found that with increasing MBDQ concentration the electron drift mobility is observable above 30 wt % MBDQ addition (5.0×10−7 cm2/V s at 40 wt % MBDQ addition) and the hole drift mobility is unchanged ( ∼ 1.0×10−4 cm2/V s) for 0–40 wt % MBDQ addition. It is also found that the photocarrier generation efficiency is increased by an order of magnitude over pristine PMPS for 30–40 wt % MBDQ addition. These results demonstrate that MBDQ/PMPS composites are an approach to improving photoelectric properties of bipolar polymeric composites. © 1999 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
72.80.Tm Composite materials

Unusual electrical behavior of Nd-doped diamond films

M. L. Terranova, V. Sessa, S. Piccirillo, M. Rossi, G. Micocci, A. Serra, and A. Tepore

Appl. Phys. Lett. 75, 379 (1999); http://dx.doi.org/10.1063/1.124381 (3 pages) | Cited 5 times

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The semiconducting behavior of Nd-containing diamond layers, obtained from the gas phase by using a synthesis methodology, has been investigated in the range 100–500 K by performing Hall-effect and conductivity measurements. The diamond-based polycrystalline layers are characterized at the same time by relatively low values of hole density and by rather high values of conductivity, whereas the hole Hall-mobility values remain those typical of diamond single crystal. The results obtained in the range 100–500 K from the analysis of a representative sample are as follows: 2.4×1017–2.8×1018 cm−3 for hole density, 2.0×102–2.8×102 Ω−1 cm−1 for conductivity, and 6.5×102–6.4×103 cm2 V−1 s−1 for Hall mobility. Structural investigations performed by reflection high-energy electron diffraction confirmed that the incorporation of Nd doping atoms did not modify the diamond lattice parameters and did not lower the crystalline quality of the diamond film. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.Ee Mobility edges; hopping transport
68.55.-a Thin film structure and morphology
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