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19 Jul 1999

Volume 75, Issue 3, pp. 307-435

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Scaling of ferroelectric properties in thin films

C. S. Ganpule, A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and R. Ramesh

Appl. Phys. Lett. 75, 409 (1999); http://dx.doi.org/10.1063/1.124391 (3 pages) | Cited 96 times

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A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles) and (ii) damage during fabrication. These deviations will have a profound impact on the performance of the next generation of high-density nonvolatile memories based on the spontaneous polarization. We have combined approaches, namely, focused ion-beam milling to define submicron capacitors and scanning force microscopy to examine the scaling of the fundamental ferroelectric response of these capacitors. We find that the capacitors exhibit ferroelectric properties for lateral dimensions down to at least 100 nm, suggesting that memories with densities in the range of 4–16 Gbits can be successfully fabricated. © 1999 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

C. L. Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, and Y. Liou

Appl. Phys. Lett. 75, 412 (1999); http://dx.doi.org/10.1063/1.124392 (3 pages) | Cited 102 times

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Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, εr, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements. © 1999 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
84.40.-x Radiowave and microwave (including millimeter wave) technology
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
77.22.Ch Permittivity (dielectric function)

Isotopic study of metalorganic chemical vapor deposition of (Ba, Sr)TiO3 films on Pt

Y. Gao, T. Tran, and P. Alluri

Appl. Phys. Lett. 75, 415 (1999); http://dx.doi.org/10.1063/1.124393 (3 pages) | Cited 8 times

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Isotopic labeling experiments (18O2) have been carried out to understand the film-formation reactions in the metalorganic chemical vapor deposition of (Ba, Sr)TiO3 (BST) films. Time-of-flight secondary ion mass spectrometry reveals both M 18O and M 16O (M=Ba, Sr, Ti) in the BST films, indicating that the oxygen in the BST films originates from both the gas phase oxidants (18O), and the precursor ligands (16O). Use of a 50% 18O2-50% N2 16O mixture results in a reduction of 18O incorporation in the BST film, indicating direct involvement of N2O in the film-formation reactions. Addition of N2O in O2 also appears to improve film surface morphology and step coverage. © 1999 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Role of lower valent substituent-oxygen vacancy complexes in polarization pinning in potassium-modified lead zirconate titanate

Qi Tan, Jianxing Li, and Dwight Viehland

Appl. Phys. Lett. 75, 418 (1999); http://dx.doi.org/10.1063/1.124394 (3 pages) | Cited 37 times

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The dependence of polarization switching on thermal histories has been investigated for K1+-modified lead zirconate titanate (PZT) ceramics by Sawyer–Tower polarization methods. It was found that double-loop-like polarization characteristics in the aged condition could be reversed to normal single loop polarization characteristics by quenching specimens from above the ferroelectric phase transition temperature. However, the P–E curves reversed back to double-loop-like characteristics after reaging specimens at elevated temperatures. Excess oxygen vacancies in La3+-modified PZT were not found to result in double-loop-like polarization hysteresis, whereas excess oxygen vacancies in K1+-modified PZT did. These results provide evidence for role of K1+-oxygen vacancy complexes in polarization pinning. © 1999 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
61.72.J- Point defects and defect clusters
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