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19 Jul 1999

Volume 75, Issue 3, pp. 307-435

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Study of strain in partially relaxed Ge epilayers on Si(100) substrate

Z. M. Jiang, C. W. Pei, X. F. Zhou, W. R. Jiang, B. Shi, X. H. Liu, Xun Wang, Q. J. Jia, W. L. Zheng, and X. M. Jiang

Appl. Phys. Lett. 75, 370 (1999); http://dx.doi.org/10.1063/1.124378 (3 pages) | Cited 5 times

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Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these Ge thin films are partially strained, and the strains decrease gradually with increasing epilayer thickness. Raman spectra reveal a downward shift of the Ge–Ge mode peak as the epilayer thickness increases. In the regions of high strain, the relationship between the Raman shift of this mode and the strain in the partially relaxed samples is considerably different from the linear relationship reported before, which is mainly attributed to the spatial confinement effect of phonons in a nanocrystal. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Am Elemental semiconductors and insulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction

R. N. Kyutt, A. A. Toropov, S. V. Sorokin, T. V. Shubina, S. V. Ivanov, M. Karlsteen, and M. Willander

Appl. Phys. Lett. 75, 373 (1999); http://dx.doi.org/10.1063/1.124379 (3 pages) | Cited 26 times

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We present x-ray diffraction studies of a CdSe distribution profile along the growth direction in CdSe/ZnSe submonolayer superlattices (SLs) grown by molecular beam epitaxy. The performed theoretical simulations show that the shape of both (004)- and (002)-reflection rocking curves is very sensitive to the vertical CdSe distribution around the intended deposition yplanes. In particular, broadening of the CdSe submonolayer insertions results in a decrease in SL (±1) and (±2) satellite intensities. Comparison of the simulations and experimental data allows us to conclude that CdSe sheets in the as-grown SL samples are asymmetrically broaden up to 5 monolayers. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Sz Deposition technology

Bipolar transport and charge-carrier generation in polymethylphenylsilane thin films containing diphenoquinone

Hiroyoshi Naito, Yoshikazu Ohsawa, and Shinya Mimura

Appl. Phys. Lett. 75, 376 (1999); http://dx.doi.org/10.1063/1.124380 (3 pages) | Cited 7 times

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Bipolar transient transport in polymethylphenylsilane (PMPS) thin films containing 3,5-dimethyl-3′,5′-di-tert-butyl-4,4′-diphenoquinone (MBDQ) has been studied with the standard time-of-flight experiment. It is found that with increasing MBDQ concentration the electron drift mobility is observable above 30 wt % MBDQ addition (5.0×10−7 cm2/V s at 40 wt % MBDQ addition) and the hole drift mobility is unchanged ( ∼ 1.0×10−4 cm2/V s) for 0–40 wt % MBDQ addition. It is also found that the photocarrier generation efficiency is increased by an order of magnitude over pristine PMPS for 30–40 wt % MBDQ addition. These results demonstrate that MBDQ/PMPS composites are an approach to improving photoelectric properties of bipolar polymeric composites. © 1999 American Institute of Physics.
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72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
72.80.Tm Composite materials

Unusual electrical behavior of Nd-doped diamond films

M. L. Terranova, V. Sessa, S. Piccirillo, M. Rossi, G. Micocci, A. Serra, and A. Tepore

Appl. Phys. Lett. 75, 379 (1999); http://dx.doi.org/10.1063/1.124381 (3 pages) | Cited 5 times

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The semiconducting behavior of Nd-containing diamond layers, obtained from the gas phase by using a synthesis methodology, has been investigated in the range 100–500 K by performing Hall-effect and conductivity measurements. The diamond-based polycrystalline layers are characterized at the same time by relatively low values of hole density and by rather high values of conductivity, whereas the hole Hall-mobility values remain those typical of diamond single crystal. The results obtained in the range 100–500 K from the analysis of a representative sample are as follows: 2.4×1017–2.8×1018 cm−3 for hole density, 2.0×102–2.8×102 Ω−1 cm−1 for conductivity, and 6.5×102–6.4×103 cm2 V−1 s−1 for Hall mobility. Structural investigations performed by reflection high-energy electron diffraction confirmed that the incorporation of Nd doping atoms did not modify the diamond lattice parameters and did not lower the crystalline quality of the diamond film. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.Ee Mobility edges; hopping transport
68.55.-a Thin film structure and morphology

p-type doping of Zn(Mg)BeSe epitaxial layers

E. Tournié and J.-P. Faurie

Appl. Phys. Lett. 75, 382 (1999); http://dx.doi.org/10.1063/1.124382 (3 pages) | Cited 9 times

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We have investigated the nitrogen-plasma p-type doping properties of both the ZnBeSe-ternary and the ZnMgBeSe-quaternary wide-bandgap alloys grown by molecular-beam epitaxy on (001) GaAs substrates. We show that net acceptor concentrations in the 1017 cm−3 range can be obtained for a bandgap as high as 3.2 eV in the ternary ZnBeSe alloy. In contrast, the bandgap of ZnMgBeSe quaternary alloys lattice matched onto GaAs should not exceed 2.97 eV to reach comparable doping levels. Our results reveal the detrimental influence of both ZnS and MgSe compounds on the p-type doping of wide-bandgap II–VI alloys. © 1999 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations

Leo Miglio, V. Meregalli, and O. Jepsen

Appl. Phys. Lett. 75, 385 (1999); http://dx.doi.org/10.1063/1.124383 (3 pages) | Cited 30 times

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In this letter, we show that the gap nature in β-FeSi2 is turned from indirect to direct when a suitable strain field is induced in the structure. Such a lattice deformation corresponds to a full lattice matching for the epitaxial relationship β-FeSi2(110)//Si(111), which is one of the most common orientations occurring to β-FeSi2 precipitates in silicon. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
64.75.-g Phase equilibria
71.15.-m Methods of electronic structure calculations

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy

Appl. Phys. Lett. 75, 388 (1999); http://dx.doi.org/10.1063/1.124384 (3 pages) | Cited 42 times

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A single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces. The AlGaN nucleation layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000 °C, where GaN and AlGaN films can be subsequently grown. We have optimized this process on both sapphire and SiC substrates, where the conditions for nucleation are found to be quite different. For growth on SiC, aluminum mole fractions ranging from 6% to 35% result in featureless surfaces. Optimizing the alloy composition and thickness of the nucleation layer on SiC allows the deposition of GaN buffer layers exceeding 5 μm without the formation of cracks. A minimum of 15% aluminum in the nucleation layer is required for smooth growth on sapphire substrates. High room temperature two-dimensional electron gas mobilities of 1575 and 1505 cm2/Vs with sheet charge densities of 1.0×1013 and 1.4×1013 cm−2 are observed in undoped AlGaN/GaN structures placed on insulating AlGaN nucleation layers on sapphire and SiC, respectively. © 1999 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
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