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19 Jul 1999

Volume 75, Issue 3, pp. 307-435

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Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor

June Key Lee, Tae-Young Kim, Ilsub Chung, and Seshu B. Desu

Appl. Phys. Lett. 75, 334 (1999); http://dx.doi.org/10.1063/1.124367 (3 pages) | Cited 29 times

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The damage of Pb(Zr0.53Ti0.47)O3 thin film due to dry etching process was characterized in terms of the microstructure and electrical properties. The damaged layer seems to be amorphous and the thickness of the damaged layer is about 10 nm. The existence of such a layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor tends to increase the coercive voltage and the leakage current. The damaged layer was not fully reverted to perovskite phase by the thermal annealing. With the wet cleaning treatment, however, the damaged layer was successfully removed thereby revealing significantly improved electrical properties. © 1999 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.65.Cf Surface cleaning, etching, patterning

Morphology of InAs self-organized islands on AlAs surfaces

P. Ballet, J. B. Smathers, and G. J. Salamo

Appl. Phys. Lett. 75, 337 (1999); http://dx.doi.org/10.1063/1.124368 (3 pages) | Cited 28 times

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We report an in situ molecular-beam epitaxy-scanning tunneling microscopy study of three-dimensional (3D) self-organized InAs islands on AlAs surfaces. The evolution of the density and morphology of these islands is investigated as a function of the InAs coverage and substrate temperature. It is shown that the 2D island density is already high just prior to 3D island formation and remains constant for 3D structures as the InAs coverage is increased. This observation contrasts with the InAs/GaAs system and makes possible the growth of very high densities of small quantum dots. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Nanocrystalline composites with high strength obtained in Zr–Ti–Ni–Cu–Al bulk amorphous alloys

Cang Fan, Dmitri V. Louzguine, Chunfei Li, and Akihisa Inoue

Appl. Phys. Lett. 75, 340 (1999); http://dx.doi.org/10.1063/1.124254 (3 pages) | Cited 54 times

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Nanocrystalline composites with the grain size less than 10 nm were produced by annealing of Cu-mold cast Zr70−x−yTixNi10Cu20Aly (X = 5–7.5 and Y = 10–15 at %) bulk amorphous alloys. The nanostructured alloys show increased tensile strength at the volume fraction of nanoparticles less than 30%. The microstructure of the amorphous alloys was found to contain medium range order (MRO) domains, which uniformly distributed in the amorphous matrix. We suggest that MRO domains provide nucleation sites for precipitation of the primary crystals and lead to the formation of nanocrystalline composites. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.30.Bx Phase diagrams of metals, alloys, and oxides
81.40.Gh Other heat and thermomechanical treatments
81.40.Lm Deformation, plasticity, and creep
61.46.-w Structure of nanoscale materials
62.20.F- Deformation and plasticity

Azimuthal anchoring energy of a chiral nematic in cylindrical cavities

R. Aloe, I. Nicotera, and A. Golemme

Appl. Phys. Lett. 75, 343 (1999); http://dx.doi.org/10.1063/1.124369 (3 pages)

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We report on the determination of the azimuthal anchoring energy for a chiral nematic in elongated droplets obtained by phase separation in a polyvinylidene fluoride matrix. 2H-NMR techniques were used to establish the director configuration in samples with different chirality and different sizes of the quasicylindrical cavities. Minimization of the free energy, including surface, elastic, and field terms, allowed us to measure for the anchoring energy a value of Wφ ≈ 10−4 J/m2. © 1999 American Institute of Physics.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
65.20.-w Thermal properties of liquids
65.40.gd Entropy
76.60.-k Nuclear magnetic resonance and relaxation

Transmission electron microscopy investigation of Co thin films on GaAs(001)

M. A. Mangan, G. Spanos, T. Ambrose, and G. A. Prinz

Appl. Phys. Lett. 75, 346 (1999); http://dx.doi.org/10.1063/1.124370 (3 pages) | Cited 12 times

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Transmission electron microscopy (TEM) observations of the microstructure of epitaxial Co thin films on GaAs(001) are reported. Cross-sectional TEM confirmed both bcc-Co and hcp-Co exist in a single 345 Å film. During film growth by molecular beam epitaxy, the epitaxial bcc-Co layer forms first at the GaAs interface, and hcp-Co islands subsequently form at the free surface of the bcc-Co layer when it reaches a thickness of about 145 Å. The bcc-Co film is single crystal at early stages of growth, but later may develop into multiple bcc crystals. The final hcp-Co grain size is roughly 15–20 nm, and selected area electron diffraction showed these grains are strongly textured. Four previously unreported variants of the hcp-Co/GaAs orientation relationship were observed in which the c axis of the hcp unit cell lies out of the plane of the film.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates

Y. Xin, S. Rujirawat, N. D. Browning, R. Sporken, S. Sivananthan, S. J. Pennycook, and N. K. Dhar

Appl. Phys. Lett. 75, 349 (1999); http://dx.doi.org/10.1063/1.124371 (3 pages) | Cited 15 times

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The effect of As passivation of Si(111) substrates on the subsequent molecular beam epitaxial growth of CdTe(111) is investigated through a detailed comparison of the microstructures of two types of films. The film grown on a substrate treated with a Te flux is found to exhibit a rough film-substrate interface and has very poor crystalline quality with a (111)A orientation. In contrast, a CdTe film grown under identical conditions except for the Si substrate treated with an As flux is observed to have an atomically abrupt film-substrate interface and a single-domain structure in the technologically more relevant (111)B orientation. A growth mechanism for the formation of these high-quality single-domain CdTe(111)B films is proposed. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Rv Passivation

High-dose oxygen ion implantation into 6H-SiC

Manabu Ishimaru, Robert M. Dickerson, and Kurt E. Sickafus

Appl. Phys. Lett. 75, 352 (1999); http://dx.doi.org/10.1063/1.124372 (3 pages) | Cited 13 times

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Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650 °C to fluences of 0.7×1018 and 1.4×1018/cm2. A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. © 1999 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
68.35.Ct Interface structure and roughness

Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

Cher-Liang Cha, Eng-Fong Chor, Hao Gong, Anthony J. Bourdillon, Yu-Min Jia, Jin-Sheng Pan, An-Qing Zhang, and Lap Chan

Appl. Phys. Lett. 75, 355 (1999); http://dx.doi.org/10.1063/1.124373 (3 pages) | Cited 2 times

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The presence of large polysilicon grains and facetal growth in floating gate (polysilicon) of memory devices causes its surface to be rough, and degrades the quality of its interface with the adjacent interpoly dielectric. A simple and efficient solution has been proposed in this work. Via low-energy N2+ or Ar+ ion implantation into deposited polysilicon film, surface silicon nitride (SiNy) or silicon carbide (SiC) are formed and they act as nucleation centers to promote the growth of small surface grains during thermal processing. Smaller surface grains, a restriction of film facetal growth, a smoother polysilicon surface, and a better floating gate/interpoly dielectric interface are all achieved via such implantation. © 1999 American Institute of Physics.
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84.30.Sk Pulse and digital circuits
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Cw Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
81.40.Gh Other heat and thermomechanical treatments

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, and J. Ahopelto

Appl. Phys. Lett. 75, 358 (1999); http://dx.doi.org/10.1063/1.124374 (3 pages) | Cited 7 times

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We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors

Photoluminescence study of Cu diffusion and electromigration in CdTe

D. Grecu and A. D. Compaan

Appl. Phys. Lett. 75, 361 (1999); http://dx.doi.org/10.1063/1.124375 (3 pages) | Cited 23 times

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We report changes in the photoluminescence (PL) spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. We studied films grown by vapor transport deposition and radio-frequency sputtering as well as single-crystal CdTe. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy band due to deep acceptor states. The changes in junction PL are consistent with the movement of Cu+ ions in the electric fields near the CdS/CdTe junction. © 1999 American Institute of Physics.
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73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.J- Diffusion of impurities
66.30.Qa Electromigration
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses

D. C. Schmidt, B. G. Svensson, J. F. Barbot, and C. Blanchard

Appl. Phys. Lett. 75, 364 (1999); http://dx.doi.org/10.1063/1.124376 (3 pages) | Cited 1 time

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Platinum has been diffused into epitaxial n-type silicon at 700 °C from 10 to 50 min in steps of 10 min following implantation with 3.3 MeV alpha particles at a dose of 1×1013 cm−2. Thereafter, the samples were characterized using deep level transient spectroscopy (DLTS). All samples show only one deep level at 0.23 eV below the conduction band that is attributed to substitutional platinum. DLTS profiling reveals a decoration of the region of maximal damage by the platinum for diffusion times of 30 min or shorter with a platinum concentration peak in the region of the maximal vacancy concentration. However, for longer diffusion times, the peak of the platinum concentration decreases. An explanation is proposed where silicon self-interstitial clusters behind the projected range dissociate, and where the liberated self-interstitials will drive the platinum away from the region of maximal damage. In order to achieve an equilibrium distribution, the platinum then diffuses further into the bulk. © 1999 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters

Highly-ordered carbon nanotube arrays for electronics applications

J. Li, C. Papadopoulos, J. M. Xu, and M. Moskovits

Appl. Phys. Lett. 75, 367 (1999); http://dx.doi.org/10.1063/1.124377 (3 pages) | Cited 298 times

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Highly-ordered arrays of parallel carbon nanotubes were grown by pyrolysis of acetylene on cobalt within a hexagonal close-packed nanochannel alumina template at 650 °C. The nanotubes are characterized by a narrow size distribution, large scale periodicity, and high densities. Using this method ordered nanotubes with diameters from 10 nm to several hundred nm and lengths up to 100 μm can be produced. The high level of ordering and uniformity in these arrays is useful for applications in data storage, field emission displays and sensors, and offers the prospect of deriving computational functions from the collective behavior of symmetrically coupled nanotubes. The fabrication method used is compatible with standard lithographic processes and thus enables future integration of such periodic carbon nanotube arrays with silicon microelectronics. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
85.65.+h Molecular electronic devices
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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