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2 Aug 1999

Volume 75, Issue 5, pp. 597-739

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Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Leif Roschier, Jari Penttilä, Michel Martin, Pertti Hakonen, Mikko Paalanen, Unto Tapper, Esko I. Kauppinen, Catherine Journet, and Patrick Bernier

Appl. Phys. Lett. 75, 728 (1999); http://dx.doi.org/10.1063/1.124495 (3 pages) | Cited 44 times

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We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail. © 1999 American Institute of Physics.
Show PACS
85.35.Gv Single electron devices
81.05.ub Fullerenes and related materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Ds Quantum interference devices

A monolithic field-effect-transistor-amplified magnetic field sensor

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

Appl. Phys. Lett. 75, 731 (1999); http://dx.doi.org/10.1063/1.124496 (3 pages) | Cited 2 times

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We propose and demonstrate the operation of a monolithic field-effect-transistor-amplified magnetic field sensor device, in which a tunnel-magnetoresistive (TMR) material is incorporated within the gate of a Si metal–oxide–semiconductor–field-effect transistor. A fixed voltage is applied across the TMR layer, which leads charge to build up within the gate. Applying or changing an external magnetic field causes a change in the charge within the TMR layer and, consequently, a shift in the transistor threshold voltage, which leads to an exponential change in subthreshold current IDS sub and a quadratic change in saturation current IDS sat. The application of a 6 kOe magnetic field at room temperature leads in our device to an absolute change in IDS sub three times as large and in IDS sat 500 times as large as the corresponding change in current through the TMR layer alone. The relative change in IDS sub is a factor of four larger than that in the current through the TMR layer. © 1999 American Institute of Physics.
Show PACS
07.55.Ge Magnetometers for magnetic field measurements
85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

Nian-Kai Zous, Tahui Wang, Chih-Chich Yeh, C. W. Tsai, and Chimoon Huang

Appl. Phys. Lett. 75, 734 (1999); http://dx.doi.org/10.1063/1.124497 (3 pages) | Cited 2 times

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The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. © 1999 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
73.40.Gk Tunneling
73.50.Fq High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling
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