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2 Aug 1999

Volume 75, Issue 5, pp. 597-739

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Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

E. A. G. Hamers, J. Bezemer, and W. F. van der Weg

Appl. Phys. Lett. 75, 609 (1999); http://dx.doi.org/10.1063/1.124456 (3 pages) | Cited 3 times

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We present a straightforward method to determine the contribution of ions to the growth rate in capacitively coupled plasma deposition systems. Ions and radicals from the plasma can be spatially separated by a small aperture in front of the substrate. Separation is caused by the different angular distribution of the velocity of these types of particles. From measured thickness profiles of deposited hydrogenated amorphous silicon, we deduce a surface reaction probability of the radicals of 0.30. It is concluded that the ions contribute about 10% of the silicon atoms to the growth process under typical deposition conditions. © 1999 American Institute of Physics.
Show PACS
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.43.Dq Amorphous semiconductors, metals, and alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Temporal development of the plasma composition of a pulsed aluminum plasma stream in the presence of oxygen

Jochen M. Schneider, André Anders, Ian G. Brown, Björgvin Hjörvarsson, and Lars Hultman

Appl. Phys. Lett. 75, 612 (1999); http://dx.doi.org/10.1063/1.124457 (3 pages) | Cited 13 times

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We describe the temporal development of the plasma composition of pulsed aluminum plasma streams at various oxygen pressures. The plasma was formed with a vacuum arc plasma source and the time resolved plasma composition was measured with time-of-flight charge-to-mass spectrometry. The temporal development of the plasma composition as well as the Al average ion charge state was found to be a strong function of the oxygen pressure. Oxygen and hydrogen concentrations of up to 0.36 and 0.32, respectively, were found in the first 50 μs of the pulse at oxygen pressures of ≥ 5×10−5 Torr. The average charge state of aluminum ions was found to vary from +1.2 to +2.5 depending on the oxygen pressure and the time elapsed after ignition of the arc. These results are of fundamental importance for the understanding of the evolution of the composition (through the plasma composition) and microstructure (through the Al ion flux energy) of alumina thin films produced by pulsed, reactive aluminum plasmas. © 1999 American Institute of Physics.
Show PACS
52.80.Vp Discharge in vacuum
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.70.Nc Particle measurements
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