APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Aug 1999

Volume 75, Issue 5, pp. 597-739

Return to All Sections
back to top
RSS Feeds

Nitridation of GaP(001) surface by electron cyclotron resonance assisted N2 plasma

Tamotsu Hashizume

Appl. Phys. Lett. 75, 615 (1999); http://dx.doi.org/10.1063/1.124458 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nitridation of GaP(001) surface was achieved at 400 °C by exposure to electron cyclotron resonance assisted N2 plasma. Detailed x-ray photoelectron spectroscopy analysis showed that after the initial stage of nitridation, the GaP surface included both of the Ga–N and P–N bonding components, while a near-stoichiometric GaN layer was formed after a 60 min nitridation process. A weak cathodoluminescence peak was detected at around 3.3 eV for the nitrided surface after 60 min of nitridation. © 1999 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
79.60.Jv Interfaces; heterostructures; nanostructures
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.60.Hk Cathodoluminescence, ionoluminescence

Second-harmonic generation in silicon carbide polytypes

S. Niedermeier, H. Schillinger, R. Sauerbrey, B. Adolph, and F. Bechstedt

Appl. Phys. Lett. 75, 618 (1999); http://dx.doi.org/10.1063/1.124459 (3 pages) | Cited 15 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report simultaneous measurements and ab initio calculations of the second-order nonlinear coefficients for SiC polytypes. Our measured values for χzzz (χzxx) are 18 (−4) pm/V for 4H SiC and 24 (−4) pm/V for 6H SiC. They are in good agreement with our theoretical results. © 1999 American Institute of Physics.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability

Effect of polyvinylcarbazole barrier layer on charge storage in amorphous selenium films

Suresh Chand, G. D. Sharma, and S. Dwivedi

Appl. Phys. Lett. 75, 621 (1999); http://dx.doi.org/10.1063/1.124460 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Effect of polyvinylcarbazole (PVK) barrier layer on charge storage in amorphous selenium (a-Se) films ( ∼ 100 μm) in the temperature range of 295–385 K has been studied as a function of barrier layer thickness ( ∼ 2400–7500 Å) using thermally stimulated discharge current (TSD) technique. TSD spectra of a-Se films show a significant reduction in the charge stored under relaxation peaks upon incorporation of PVK interface layer. These results have been attributed to blocking and field enhanced mobility role of PVK barrier layer film. © 1999 American Institute of Physics.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.22.Ej Polarization and depolarization

Placement of conjugated oligomers in an alkanethiol matrix by scanned probe microscope lithography

J. Chen, M. A. Reed, C. L. Asplund, A. M. Cassell, M. L. Myrick, A. M. Rawlett, J. M. Tour, and P. G. Van Patten

Appl. Phys. Lett. 75, 624 (1999); http://dx.doi.org/10.1063/1.124461 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the in situ replacement of conjugated molecules in an insulating matrix by scanned probe microscope lithography. High yield, programmable patterning of a self-assembled monolayer of dodecanethiol was performed by applying voltage pulses from a scanning tunneling microscope. Conjugated oligomers were observed to be subsequently chemisorbed onto the patterned sites. © 1999 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.18.-g Langmuir-Blodgett films on liquids
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

Hyongsok T. Soh, Calvin F. Quate, Alberto F. Morpurgo, Charles M. Marcus, Jing Kong, and Hongjie Dai

Appl. Phys. Lett. 75, 627 (1999); http://dx.doi.org/10.1063/1.124462 (3 pages) | Cited 125 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-walled carbon nanotubes are synthesized by chemical vapor deposition of methane at controlled locations on a substrate using patterned catalytic islands. The combined synthesis and microfabrication technique presented here allows a large number of ohmically contacted nanotube devices with controllable length to be placed on a single substrate. Transport studies demonstrate ohmic contacting, giving two-terminal resistances as low as 20 kΩ at low temperatures. © 1999 American Institute of Physics.
Show PACS
81.05.ub Fullerenes and related materials
73.61.Wp Fullerenes and related materials
72.80.Rj Fullerenes and related materials
85.65.+h Molecular electronic devices
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Cg Contact resistance, contact potential

TiNx films with metallic behavior at high N/Ti ratios for better solar control windows

G. B. Smith, P. D. Swift, and A. Bendavid

Appl. Phys. Lett. 75, 630 (1999); http://dx.doi.org/10.1063/1.124463 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using cathodic arc deposition with 700 eV nitrogen ion assistance, metallic response in TiNx thin films to at least N/Ti = 1.3 is found. Metallic behavior is usually limited to N/Ti ratios just above 1.1. Defects are almost exclusively Ti vacancies which further enhances optical changes. The resulting large shift in onset of Drude reflection to longer wavelengths enhances the view, daylighting, and environmental performance of a coated window relative to stoichiometric TiN films on glass. © 1999 American Institute of Physics.
Show PACS
42.79.Wc Optical coatings
61.66.Bi Elemental solids
61.66.Dk Alloys
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Rs Spray coating techniques
61.72.J- Point defects and defect clusters
68.55.Nq Composition and phase identification
78.66.Nk Insulators

Void nucleation on intentionally added defects in Al interconnects

J. C. Doan, S.-H. Lee, J. C. Bravman, P. A. Flinn, and T. N. Marieb

Appl. Phys. Lett. 75, 633 (1999); http://dx.doi.org/10.1063/1.124464 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Void nucleation in passivated aluminum interconnects was studied using high voltage scanning electron microscopy. To test theories about stress-induced and electromigration void nucleation, Ar ions were implanted into Al specimens. The Ar atoms precipitated and formed bubbles that served as nucleation sites with high surface energy. In the implanted samples, voids formed away from the interconnect sidewalls, in contrast to voids in ordinary passivated Al interconnects. The evolution of the void volume was also affected by the reduction in the nucleation barrier. These results strongly support the theory of void nucleation on interface flaws in Al interconnects.© 1999 American Institute of Physics.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.82.Bg Metals and alloys
66.30.Qa Electromigration
61.80.Jh Ion radiation effects

Fiber-like lanthanum tungstate crystal for efficient stimulated Raman scattering

Yoshiharu Urata, Satoshi Wada, Hideo Tashiro, and Tsuguo Fukuda

Appl. Phys. Lett. 75, 636 (1999); http://dx.doi.org/10.1063/1.124465 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A solid-state Raman material, fiber-shaped single crystal lanthanum tungstate (LWO) has been successfully grown by the micro-pulling-down method. The fiber-shaped LWO crystals yielded intense Stokes pulses with an energy shift of 940 cm−1. In stimulated Raman conversion, a conversion efficiency of 6.8% (internal efficiency of 37%) to the first Stokes wave was achieved. © 1999 American Institute of Physics.  
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.Bm Fabrication, cladding, and splicing
78.30.Hv Other nonmetallic inorganics
81.10.Fq Growth from melts; zone melting and refining
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

X-ray standing waves effects for a multilayer mirror modulated by surface acoustic waves

D. V. Roshchupkin, R. Tucoulou, and M. Brunel

Appl. Phys. Lett. 75, 639 (1999); http://dx.doi.org/10.1063/1.124466 (2 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The x-ray standing wave technique has been used to characterize a multilayer mirror modulated by surface acoustic waves. Upon sinusoidal modulation of a multilayer by surface acoustic waves, fields of x-ray standing waves are found to form around the Bragg conditions and at the angular positions of the rocking curve diffraction satellites. It is shown that the angular position of the diffraction peaks in the rocking curve and the amplitude of x-ray standing waves are determined by the wavelength and the amplitude of the surface acoustic waves, respectively.© 1999 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.85.-m X- and γ-ray instruments
68.35.Gy Mechanical properties; surface strains
68.35.Ct Interface structure and roughness
61.05.C- X-ray diffraction and scattering

Silicon nanocrystallites in buried SiOx layers via direct wafer bonding

U. Kahler and H. Hofmeister

Appl. Phys. Lett. 75, 641 (1999); http://dx.doi.org/10.1063/1.124467 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A combination of SiO vapor-deposition and direct wafer bonding is used to produce buried layers of SiOx. By thermally induced decomposition, Si nanocrystals embedded in SiO2 are obtained. Decomposition of the silicon suboxide is observed by studying the Si-O-Si stretching vibration in the infrared range. This phase separation process is found to start already at 400 °C and to be mostly complete after 1 h at 800 °C. Annealing at 1000 °C yields well established Si nanocrystallites of considerable density with diameters about 4 nm buried in the interface layer between the bonded silicon wafers. © 1999 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Cc Kinetics of defect formation and annealing
64.75.-g Phase equilibria
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
78.66.Vs Fine-particle systems

Vibrational properties of tetrahedral amorphous carbon from first principles

Francesco Mauri and Andrea Dal Corso

Appl. Phys. Lett. 75, 644 (1999); http://dx.doi.org/10.1063/1.124468 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study the vibrational properties of hydrogenated tetrahedral amorphous carbon from first principles. Our results reproduce the C density of states (DOS) measured by electron energy loss. We decompose the theoretical DOS in terms of vibrational modes of microscopic units. These partial DOS have large overlaps in frequency. Only the region between 1350 and 1600 cm−1 is covered by a single type of stretching (sp2–sp2), whose DOS reproduces the experimental visible Raman spectra. We find a linear correlation between CH stretch frequency and CH bond length, and we show that the spreading of CH distances due to the constraints imposed by the C network is an important source of broadening of the CH stretching spectrum. © 1999 American Institute of Physics.
Show PACS
63.50.-x Vibrational states in disordered systems
61.43.Er Other amorphous solids

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

E. Neufeld, M. Markmann, A. Vörckel, K. Brunner, and G. Abstreiter

Appl. Phys. Lett. 75, 647 (1999); http://dx.doi.org/10.1063/1.124469 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we report on the influence of the space charge region width in erbium- and oxygen-doped silicon light-emitting diodes on the electroluminescence (EL) power at 1.54 μm under reverse bias conditions. The space charge region width was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er–O donors. We observe a strong enhancement of the EL power with increasing width. The data indicate the existence of a dark region of approximately 45 nm in the pn junction, in which no light is generated due to a lack of hot carriers which are necessary for impact excitation of Er3+ ions. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
77.22.Jp Dielectric breakdown and space-charge effects
78.60.Fi Electroluminescence
72.20.Ht High-field and nonlinear effects

A (2math×2math) surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy

M. Naitoh, J. Takami, S. Nishigaki, and N. Toyama

Appl. Phys. Lett. 75, 650 (1999); http://dx.doi.org/10.1063/1.124470 (3 pages) | Cited 24 times

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
The structure of Si-rich 6H–SiC(0001) surfaces has been investigated by scanning tunneling microscopy (STM) and low-energy electron diffraction. We observed a surface phase with (−2  4 26) periodicity (designated as (2math×2math) for convenience), coexisting with the known stable (3×3) phase, in a surface obtained by annealing the (3×3) surface at 800 °C. A structural model containing eight Si adatoms per unit cell on the Si adlayer is proposed, which is consistent with the present STM images and with the extension of the (3×3) model structure. © 1999 American Institute of Physics.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Micromechanical properties of silica aerogels

M. Moner-Girona, A. Roig, E. Molins, E. Martínez, and J. Esteve

Appl. Phys. Lett. 75, 653 (1999); http://dx.doi.org/10.1063/1.124471 (3 pages) | Cited 25 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Aerogels are nanostructured highly porous solids that present properties which are very different from other materials, i.e., extremely low densities. In this letter, the mechanical properties of aerogels have been studied with a nondestructive microindentation technique. This technique enables the continuous measurement of load-displacement curves during loading and unloading cycles by using very small indentation loads (∼1 mN), small enough to prevent cracking of the aerogels. The samples studied show two different types of mechanical behaviors; the low-density aerogels are elastic, while the denser aerogels behave as elastoplastic materials. Young’s modulus, hardness, and the elastic parameter have been evaluated for these aerogel samples. Power function relationships have been found between these mechanical parameters and the aerogel densities. © 1999 American Institute of Physics.
Show PACS
81.05.Rm Porous materials; granular materials
62.20.M- Structural failure of materials
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close