APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

9 Aug 1999

Volume 75, Issue 6, pp. 745-878

Page 2 of 2 Pages Previous Page | Jump to Page
back to top
RSS Feeds

Matrix effects in particle induced x-ray emission channeling measurements of ZnSe/GaAs heterostuctures

A. Seppälä and J. Räisänen

Appl. Phys. Lett. 75, 820 (1999); http://dx.doi.org/10.1063/1.124524 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The significance of the matrix effects, i.e., of self-absorption and secondary fluorescence, in particle induced x-ray emission (PIXE) channeling measurements was studied in epitaxial ZnSe layers on a GaAs substrate. The effect of self-absorption on Zn and Se channeling minimum yields was found to be significant only with thick ZnSe layers. The importance of secondary fluorescence was estimated by applying an introduced correction formula to the measured Zn minimum yields for ZnSe/GaAs heterostructures. The corrections in Zn minimum yields were significant at high proton energies (>2 MeV). Thus, errors for instance in impurity atom lattice location determinations by PIXE channeling occur unless these effects are correctly taken into account. © 1999 American Institute of Physics.
Show PACS
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
68.55.Nq Composition and phase identification
68.35.Ct Interface structure and roughness

Observation of valence band electron emission from n-type silicon field emitter arrays

Meng Ding, Han Kim, and Akintunde I. Akinwande

Appl. Phys. Lett. 75, 823 (1999); http://dx.doi.org/10.1063/1.124525 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electron emission from the valence band of n-type Si field emitter arrays is reported. High electrostatic field at the surface of Si was achieved by reducing the radius of the emitter tip. Using oxidation sharpening, 1 μm aperture polycrystalline Si gate, n-type Si field emitter arrays with small tip radius (∼10 nm) were fabricated. Three distinct emission regions were observed: conduction band emission at low gate voltages, saturated current emission from the conduction band at intermediate voltages, and valence band plus conduction band emission at high gate voltages. Emission currents at low and high voltages obey the Fowler–Nordheim theory. The ratio of the slopes of the corresponding Fowler–Nordheim fits for these two regions is 1.495 which is in close agreement with the theoretical value of 1.445. © 1999 American Institute of Physics.
Show PACS
85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
71.20.Mq Elemental semiconductors
73.40.Gk Tunneling

A role of illumination during etching to porous silicon oxidation

J. Salonen, V-P. Lehto, M. Björkqvist, and E. Laine

Appl. Phys. Lett. 75, 826 (1999); http://dx.doi.org/10.1063/1.124526 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The oxidation behavior of porous silicon (PS) has been found to be related to illumination during etching. The autocatalytic oxidation behavior at room temperature arises from the unrelaxed surface induced by the preparation under illumination and can be removed using thermal treatment in a nitrogen atmosphere. The effect is absent in the case of degenerate PS and smaller in p type than in n-type PS. The correlation between the oxidation behavior and the microstructural dimensions is also discussed. © 1999 American Institute of Physics.
Show PACS
81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
81.65.Mq Oxidation
81.65.Cf Surface cleaning, etching, patterning
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
81.40.Gh Other heat and thermomechanical treatments

Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations

Brett Z. Nosho, Luis A. Zepeda-Ruiz, Rodney I. Pelzel, W. Henry Weinberg, and Dimitrios Maroudas

Appl. Phys. Lett. 75, 829 (1999); http://dx.doi.org/10.1063/1.124527 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The surface morphology of InAs films grown on GaAs(111)A has been studied by scanning tunneling microscopy. The vertical surface displacement on the InAs films has been found to depend on the underlying GaAs buffer layer thickness: specifically, thin GaAs layers are observed to behave mechanically similar to compliant substrates. Atomistic simulations within a valence force field model have been used to compare quantitatively how the InAs surface morphology depends on film thickness and the underlying GaAs layer thickness. The experimental and theoretical results are in excellent agreement over a range of film thicknesses where the misfit dislocation network at the semicoherent InAs/GaAs interface is fully developed. © 1999 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Bb Theories and models of crystal defects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations
68.35.Ct Interface structure and roughness

Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy

A. Hierro, D. Kwon, S. H. Goss, L. J. Brillson, S. A. Ringel, S. Rubini, E. Pelucchi, and A. Franciosi

Appl. Phys. Lett. 75, 832 (1999); http://dx.doi.org/10.1063/1.124528 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A midgap deep level in n-type ZnSe grown by molecular beam epitaxy (MBE) on In0.04Ga0.96As/GaAs is detected and investigated by deep level optical spectroscopy and cathodoluminescence spectroscopy. The deep level has an optical threshold energy of 1.46 eV below the conduction band edge, and its concentration strongly depends on the Zn:Se beam pressure ratio during initial nucleation of the ZnSe layer. The concentration of this level decreases by a factor of ∼8 for Se rich vs Zn rich nucleation conditions, correlating with a decrease in the Se vacancy concentration for Se-rich nucleation. The investigation of photocapacitance transients revealed a strong interaction of the 1.46 eV level with both the conduction and the valence bands. Moreover, this level showed the largest optical cross section (emission rate of ∼ 103 s−1) of all of the levels found in the ZnSe layer. Taken together, these observations suggest this level may be an important recombination-generation center in MBE-grown ZnSe devices on GaAs substrates. © 1999 American Institute of Physics.
Show PACS
71.55.Gs II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors

Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots

T. Brunhes, P. Boucaud, S. Sauvage, F. Glotin, R. Prazeres, J.-M. Ortega, A. Lemaître, and J.-M. Gérard

Appl. Phys. Lett. 75, 835 (1999); http://dx.doi.org/10.1063/1.124529 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resonant second-harmonic generation is reported in InAs/GaAs self-assembled quantum dots. Frequency doubling is observed between confined states in the valence band of the quantum dots. The second-order nonlinear susceptibility is maximum at 168 meV (7.4 μm wavelength) and is observed for an in-plane polarized excitation. A value of χzxx(2) as large as 2×10−7 (m/V) is measured for one dot plane. A three-dimensional numerical calculation of the valence band states shows that the second-harmonic generation involves a resonant excitation between the h000 and h101 states and a state close to the continuum wetting layer states. © 1999 American Institute of Physics.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.An Optical susceptibility, hyperpolarizability

Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

G. E. Bunea, W. D. Herzog, M. S. Ünlü, B. B. Goldberg, and R. J. Molnar

Appl. Phys. Lett. 75, 838 (1999); http://dx.doi.org/10.1063/1.124530 (3 pages) | Cited 29 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Time-resolved photoluminescence (PL) spectroscopy was used to study the radiative recombination of free and donor-bound excitons in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra identified the free exciton (A), the donor-bound exciton peak ∼6 meV below, and the acceptor-bound exciton ∼20 meV below the free exciton peak. A radiative recombination lifetime of 295 ps for the free exciton and 530 ps for donor-bound exciton were found at 4 K. The decay of the free exciton remained single exponential to room temperature, with an increase in lifetime to 530 ps, consistent with the thermal excitation of exciton states. © 1999 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena
71.55.Eq III-V semiconductors

Charge transport in polymer light-emitting diodes at high current density

I. H. Campbell, D. L. Smith, C. J. Neef, and J. P. Ferraris

Appl. Phys. Lett. 75, 841 (1999); http://dx.doi.org/10.1063/1.124531 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present measured and calculated current–voltage (I–V) characteristics of diodes fabricated using a soluble poly(p-phenylene vinylene) derivative. Steady-state and pulsed electrical excitation were used to acquire the I–V characteristics for current densities from 1×10−3 to 1.3×103 A/cm2. Hole current is predominant in the diode. The I–V characteristics were fit using a device model that assumes an electric field-dependent hole mobility of the Poole–Frenkel form that is independent of the charge carrier density. The measured and calculated I–V characteristics are in good agreement over the full range of current density. The maximum electric field and carrier density is about 4×106 V/cm and 1×1018 cm−3, respectively. These results demonstrate that an electric field-dependent mobility, without carrier density dependence, provides an accurate description of hole transport in this polymer over this range of field and carrier density. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
73.50.Fq High-field and nonlinear effects
back to top
RSS Feeds

Thickness dependence of magnetic properties of granular thin films with interacting particles

Leszek M. Malkinski, Jian-Qing Wang, Jianbiao Dai, Jinke Tang, and Charles J. O’Connor

Appl. Phys. Lett. 75, 844 (1999); http://dx.doi.org/10.1063/1.124532 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of film thickness on magnetic properties of Cu80Co20 granular alloy was studied. It was observed that the susceptibility peak temperature, TM, strongly increases with the film thickness, t, for t<100 nm. The long-range nature of this effect points to magnetic dipole interaction as responsible mechanism. This dependence of TM can be explained within the framework of Dormann’s theory of dipolar interaction between magnetic particles. The coercive field has different thickness dependence and it is related to formation of magnetic domain structure of Co particles in the granular alloy. © 1999 American Institute of Physics.
Show PACS
75.50.Tt Fine-particle systems; nanocrystalline materials
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure

Thermally activated demagnetization in Co/Ni multilayers involving discrete identifiable stages

J. M. González, A. Salcedo, F. Cebollada, J. J. Freijo, J. L. Muñoz, and A. Hernando

Appl. Phys. Lett. 75, 847 (1999); http://dx.doi.org/10.1063/1.124533 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present data, obtained from measured Co/Ni multilayers, that indicate that the magnetic relaxation processes take place through a nucleation-coalescence sequence, and thus crucially implicates the existance of exchange and dipolar interactions. Depending on the layer thickness the relaxation proceeds either through a single global stage or through several partial ones. In both cases the relaxation stages involve a time lapse during which the macroscopic state of the system evolves very slowly, followed by a sharp variation of the total moment of the sample. Such behavior clearly implies a significant departure from the conventionally accepted Arrhenius relaxation kinetics. © 1999 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Cc Other ferromagnetic metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Et Exchange and superexchange interactions
78.20.Ls Magneto-optical effects
78.66.Bz Metals and metallic alloys

Tailoring of high-Tc Josephson junctions by doping their electrodes

C. W. Schneider, R. R. Schulz, B. Goetz, A. Schmehl, H. Bielefeldt, H. Hilgenkamp, and J. Mannhart

Appl. Phys. Lett. 75, 850 (1999); http://dx.doi.org/10.1063/1.124534 (3 pages) | Cited 26 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Appropriate doping of the electrodes of high-Tc Josephson junctions provides a means to systematically adjust the junctions’ electronic properties. This is demonstrated for the exemplary case of grain boundary junctions in bicrystalline Ca-doped YBa2Cu3O7−δ films. It is found that the critical current density is strongly increased and the normal state resistivity significantly reduced in comparison with the values obtained for equivalent junctions in undoped films. © 1999 American Institute of Physics.
Show PACS
85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties
74.72.-h Cuprate superconductors
74.25.Sv Critical currents
61.72.Mm Grain and twin boundaries
74.25.Jb Electronic structure (photoemission, etc.)
back to top
RSS Feeds

Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant

Yuhuan Xu, Yi-pin Tsai, K. N. Tu, Bin Zhao, Q.-Z. Liu, Maureen Brongo, George T. T. Sheng, and C. H. Tung

Appl. Phys. Lett. 75, 853 (1999); http://dx.doi.org/10.1063/1.124535 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film. © 1999 American Institute of Physics.
Show PACS
77.84.Jd Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)
61.43.Gt Powders, porous materials
81.05.Rm Porous materials; granular materials
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Ferroelectricity in thin perovskite films

T. Tybell, C. H. Ahn, and J.-M. Triscone

Appl. Phys. Lett. 75, 856 (1999); http://dx.doi.org/10.1063/1.124536 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the investigation of ferroelectricity in thin tetragonal single-crystalline perovskite films of Pb(Zr0.2Ti0.8)O3 grown by off-axis rf magnetron sputtering. The local ferroelectric properties of atomically smooth films, with thicknesses ranging from a few unit cells to 800 Å, were measured using a combination of electric force microscopy and piezoelectric microscopy. The time dependence of the measured signals reveals a stable ferroelectric polarization in films down to thicknesses of 40 Å. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.22.Ej Polarization and depolarization
back to top
RSS Feeds

Polarization-insensitive wavelength selection in an axially symmetric liquid-crystal Fabry-Perot filter

Ju-Hyun Lee, Hak-Rin Kim, and Sin-Doo Lee

Appl. Phys. Lett. 75, 859 (1999); http://dx.doi.org/10.1063/1.124537 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A polarization-insensitive, electrically tunable Fabry-Perot filter (FP) with a nematic liquid crystal (NLC) is demonstrated in an axially symmetrical configuration. Due to the axial symmetry, the wavelength-selection property of the FP filter is completely independent of the polarization state of the input beam in the whole range of tuning. For normal incidence, the in-plane symmetry of the input polarization state is preserved in such configuration that the alignment of the NLC molecules are homeotropic on one mirror surface and axially homogeneous on the other surface. © 1999 American Institute of Physics.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
42.79.Kr Display devices, liquid-crystal devices

High-efficiency piezoelectric motor combining continuous rotation with precise control over angular positioning

A. E. Glazounov, S. Wang, Q. M. Zhang, and C. Kim

Appl. Phys. Lett. 75, 862 (1999); http://dx.doi.org/10.1063/1.124538 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The letter describes a piezoelectric motor that combines the merits of piezoelectric materials, such as high power density generated at electromechanical resonance, and a precise control of displacement. The motor utilizes a direct coupling mechanism between the stator and rotor, where a clutch drives the rotor via locking it. The direct coupling makes it possible to transmit the whole power generated in the piezoelectric element to the rotor, and thus achieve the high efficiency of the motor. It also allows the combining of two regimes of operation: continuous rotation and a stepwise motion within a 360° interval with a high resolution of angular displacement. © 1999 American Institute of Physics.
Show PACS
84.50.+d Electric motors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.05.Dz Control systems
back to top
RSS Feeds

Acoustic waveguide properties of a thin film of nanoporous silica on silicon

John A. Rogers and Carlye Case

Appl. Phys. Lett. 75, 865 (1999); http://dx.doi.org/10.1063/1.124539 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports picosecond laser-based measurements of acoustic waveguiding in a thin film of nanoporous silica (similar to silica aerogel or xerogel) on silicon for wavelengths between 2.5 and 25 μm. The large mismatch between the acoustic properties of the film and substrate in this system creates pronounced dispersion in the velocities and leads to unusual acoustic behavior: over a relatively large range of wavelengths, the group velocities of the lowest order Rayleigh mode and certain other modes are less than 50 m/s—nearly ten times slower than the intrinsic velocities of the nanoporous silica and more than one hundred times slower than those of silicon. An isotropic model of the waveguide reproduces these and other features. Nonlinear least-squares fitting of the data to this model determines the intrinsic acoustic velocities of the nanoporous glass. © 1999 American Institute of Physics.
Show PACS
68.35.Gy Mechanical properties; surface strains
43.20.Mv Waveguides, wave propagation in tubes and ducts
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
62.65.+k Acoustical properties of solids

A 3×3 millimeter-wave micromachined imaging array with superconductor–insulator–superconductor mixers

Gert de Lange, Konstantinos Konistis, and Qing Hu

Appl. Phys. Lett. 75, 868 (1999); http://dx.doi.org/10.1063/1.124540 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Results from a 3×3 micromachined millimeter-wave focal-plane imaging array with superconducting tunnel junctions as mixing elements are presented. The array operates in a frequency range of 170–210 GHz. The imaging array chip uses relatively large-area 9 μm2 and low-impedance (4–5 Ω) junctions. Integrated tuning structures are implemented to match the devices to the antenna impedance. Noise measurements yielded the lowest double-sideband noise temperature of 52 K (at 190 GHz) from the central element. The lowest noise temperatures from the off-axis elements are in the range of 60–100 K, with a uniform bandwidth of 30 GHz. Antenna beam patterns with an essentially Gaussian profile have been measured for on- and off-axis elements. © 1999 American Institute of Physics.
Show PACS
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
84.40.Ba Antennas: theory, components and accessories
84.40.Dc Microwave circuits

Electrical method of monitoring percolation and abrasion of conducting spheres due to shear flow of a dense suspension in a narrow gap

S. H. Mannan, D. A. Hutt, and D. C. Whalley

Appl. Phys. Lett. 75, 871 (1999); http://dx.doi.org/10.1063/1.124543 (2 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter describes a method for studying the behavior of rigid particles in a dense suspension when they are forced into contact during flow within a narrow gap. The particles form transient percolating networks spanning the boundary walls, and will be crushed together. The method involves measuring the dc electrical resistance across the gap. The suspension (e.g., solder paste) consists of electrically conducting particles suspended in an insulating fluid. The electrical resistance drops when the particles are in contact with each other and the walls, and the insulating films on the surface of the conductors have been broken through. The results show a dramatic change in behavior as the ratio of gap to particle diameter is varied. © 1999 American Institute of Physics.
Show PACS
47.55.Kf Particle-laden flows
83.80.Hj Suspensions, dispersions, pastes, slurries, colloids
83.80.Iz Emulsions and foams
47.60.-i Flow phenomena in quasi-one-dimensional systems
73.40.Cg Contact resistance, contact potential
83.50.Ha Flow in channels
83.85.Cg Rheological measurements—rheometry

Large current density from carbon nanotube field emitters

W. Zhu, C. Bower, O. Zhou, G. Kochanski, and S. Jin

Appl. Phys. Lett. 75, 873 (1999); http://dx.doi.org/10.1063/1.124541 (3 pages) | Cited 273 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We observe that field emitters made from carbon nanotubes exhibit excellent macroscopic emission properties; they can operate at a very large current density, as high as 4 A/cm2. At electric fields as low as 4–7 V/μm, they emit technologically useful current densities of 10 mA/cm2. We show that the emission originates from nanotube ends with a characteristic structured ring pattern. The emission characteristics and durability of the carbon nanotube cold cathodes offer promising applications for vacuum microelectronic devices. © 1999 American Institute of Physics.
Show PACS
85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Wp Fullerenes and related materials
back to top
RSS Feeds
FREE

Comment on “Lateral photocurrent spreading in single quantum well infrared photodetectors” [Appl. Phys. Lett. 72, 2865 (1998)]

I. Khmyrova

Appl. Phys. Lett. 75, 876 (1999); http://dx.doi.org/10.1063/1.124542 (2 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
FREE

Response to “Comment on ‘Lateral photocurrent spreading in single quantum well infrared photodetectors’ ” [Appl. Phys. Lett. 75, 876 (1999)]

M. Ershov

Appl. Phys. Lett. 75, 877 (1999); http://dx.doi.org/10.1063/1.124950 (2 pages)

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close