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16 Aug 1999

Volume 75, Issue 7, pp. 885-1026

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Modeling the breakdown spots in silicon dioxide films as point contacts

J. Suñé, E. Miranda, M. Nafría, and X. Aymerich

Appl. Phys. Lett. 75, 959 (1999); http://dx.doi.org/10.1063/1.124566 (3 pages) | Cited 12 times

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Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact. © 1999 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Hi Surface barrier, boundary, and point contact devices
73.23.-b Electronic transport in mesoscopic systems
85.35.Ds Quantum interference devices

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux

Appl. Phys. Lett. 75, 962 (1999); http://dx.doi.org/10.1063/1.124567 (3 pages) | Cited 134 times

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GaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 °C on AlN has been investigated in situ by reflection high-energy electron diffraction. It is found that a growth interruption performed at GaN thicknesses larger than three molecular monolayers (8 Å) instantaneously leads to the formation of three-dimensional islands. This is used to grow GaN/AlN QDs on Si(111). Depending on their sizes, intense room-temperature photoluminescence is observed from blue to orange. Finally, we demonstrate that stacking of QD planes with properly chosen dot sizes gives rise to white light emission. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures

M. Rotter, A. Wixforth, A. O. Govorov, W. Ruile, D. Bernklau, and H. Riechert

Appl. Phys. Lett. 75, 965 (1999); http://dx.doi.org/10.1063/1.124568 (3 pages) | Cited 7 times

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Surface acoustic waves accompanied by very large piezoelectric fields can be created in a semiconductor/piezoelectric hybrid system. Such intense waves interact with the mobile carries in semiconductor quantum well structures in a manner being strongly governed by nonlinear effects. At high sound intensities, a formerly homogeneous two-dimensional electron system breaks up into well confined stripes surfing the wave. As a result, we observe a strong reduction of electronic sound attenuation. On the other hand, large momentum transfer between the electron system and the wave results in nonlinear acoustoelectric effects and acoustoelectric amplification. We describe our experimental findings in terms of a generalized theory of the acoustoelectric effect and discuss the importance for possible device applications. © 1999 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.25.-x Nonlinear acoustics
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Reversible charging effects in SiO2 films containing Si nanocrystals

Suk-Ho Choi and R. G. Elliman

Appl. Phys. Lett. 75, 968 (1999); http://dx.doi.org/10.1063/1.124569 (3 pages) | Cited 35 times

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Reversible charging effects are observed in metal–insulator–semiconductor structures which have been ion implanted and annealed to produce Si nanocrystals in the insulating SiO2 layer. The shifts in current–voltage (I–V) and capacitance–voltage (C–V) curves are induced by forward constant voltage stress or UV light exposure, and can be explained by hole charging of the nanocrystals in the insulator layer. A reverse constant voltage stress is shown to recover the original I–V curve and partially recover the original C–V curve. For a sample implanted with a Si dose of 3×1016 Si cm−2, the voltage shift of the I–V curve produced by a forward voltage stress of V = −10 V for 5 s is 1.2 V, which is shown to be in reasonable agreement with simple estimates based on nanocrystal charging. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Rx Nanocrystalline materials

Anti-Stokes photoluminescence in colloidal semiconductor quantum dots

Ehud Poles, Donald C. Selmarten, Olga I. Mićić, and Arthur J. Nozik

Appl. Phys. Lett. 75, 971 (1999); http://dx.doi.org/10.1063/1.124570 (3 pages) | Cited 38 times

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We report anti-Stokes photoluminescence (photon energy up-conversion) from size-quantized CdSe and InP nanocrystalline colloids. The observed up-conversion is highly efficient and occurs at very low excitation intensities. With low temperatures the intensity of the up-converted photoluminescence decreases while that of the usual Stokes photoluminescence increases; the up-converted photoluminescence is also restricted to energies corresponding to the band gaps of the quantum dots that are present in the colloid ensemble. The anti-Stokes photoluminescence is explained by a model that involves surface states. © 1999 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
82.70.Dd Colloids
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Luminescence of ZnCdSe/ZnSe ridge quantum wires

W. Heiss, G. Prechtl, D. Stifter, H. Sitter, G. Springholz, T. Riemann, F. Bertram, D. Rudloff, J. Christen, G. Bley, U. Neukirch, J. Gutowski, and J. Liu

Appl. Phys. Lett. 75, 974 (1999); http://dx.doi.org/10.1063/1.124571 (3 pages) | Cited 3 times

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Blue light-emitting quantum wire structures fabricated by molecular-beam epitaxial growth on submicrometer prepatterned GaAs substrates were investigated by spatially and time resolved luminescence experiments. The quantum wires are formed due to the different growth rates of ZnCdSe on the (111) and (100) surfaces of the grated substrate. With decreasing wire width, the exciton luminescence splits into two clearly distinguished lines. These lines can be assigned to the emission of the ridge quantum wire and the emission of ZnCdSe quantum wells at the bottom of the grooves. The two-dimensional quantum confinement in the ridge wire is confirmed by a maximum of the decay time at the energy of the ridge luminescence. © 1999 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.05.Dz II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Depth-resolved microspectroscopy of porous silicon multilayers

S. Manotas, F. Agulló-Rueda, J. D. Moreno, R. J. Martín-Palma, R. Guerrero-Lemus, and J. M. Martínez-Duart

Appl. Phys. Lett. 75, 977 (1999); http://dx.doi.org/10.1063/1.124572 (3 pages) | Cited 19 times

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We have measured depth-resolved microphotoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. The PL emission band gets stronger, blueshifts, and narrows at the high porosity layers. On the contrary, the Raman band weakens and broadens. This band is fitted to the phonon confinement model. With the bulk silicon phonon frequency and its linewidth as free parameters, we obtain crystallite size, temperature, and stress as a function of depth. Sizes are larger than those estimated from PL. Laser power was reduced to eliminate heating effects. Compressive stresses in excess of 10 kbar are found in the deepest layer due to the lattice mismatch with the substrate. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators

Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa

Appl. Phys. Lett. 75, 980 (1999); http://dx.doi.org/10.1063/1.124573 (3 pages) | Cited 191 times

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ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were epitaxially grown by laser molecular-beam epitaxy on a sapphire(0001) substrate using a ZnO buffer layer. The superlattice structure with a period ranging from 8 to 18 nm was clearly verified by cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction. As the well layer thickness decreased below 5 nm, the photoluminescence peak and absorption edge in the photoluminescence excitation spectra showed a blueshift, indicating a quantum-size effect. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

SiGe-on-insulator substrate using SiGe alloy grown Si(001)

Yukari Ishikawa, N. Shibata, and S. Fukatsu

Appl. Phys. Lett. 75, 983 (1999); http://dx.doi.org/10.1063/1.124574 (3 pages) | Cited 27 times

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Low-energy oxygen ion (25 keV O+) implantation was performed on a pseudomorphic Si1−xGex/Si(001) of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition (<0.3) was found to be essential to achieving a SiGe-OI geometry of structural integrity. © 1999 American Institute of Physics.
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61.72.up Other materials
85.40.Ry Impurity doping, diffusion and ion implantation technology

Lasing in quantum-dot ensembles with sharp adjustable electronic shells

S. Fafard, Z. R. Wasilewski, C. Nì. Allen, K. Hinzer, J. P. McCaffrey, and Y. Feng

Appl. Phys. Lett. 75, 986 (1999); http://dx.doi.org/10.1063/1.124253 (3 pages) | Cited 35 times

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Quantum-dot laser diodes with up to five well-defined electronic shells are fabricated using self-assembled quantum dots (QDs) grown by molecular-beam epitaxy. Shape-engineered stacks of self-aligned QDs with improved uniformity are used to increase the gain in the active region. Lasing is observed in the upper QD shells for small-gain media, and progresses towards the QD ground states for longer cavity lengths. We obtained at 77 K thresholds of Jth = 15 A/cm2 for a 2 mm cavity lasing in the first excited state (p shell), and Jth = 125 A/cm2 for a 1 mm cavity lasing in n = 3 (d shell). At 300 K for a 1 mm cavity, Jth is 490 A/cm2 with lasing in n = 4 (f shell). © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

A. Pavlovska, V. M. Torres, E. Bauer, R. B. Doak, I. S. T. Tsong, D. B. Thomson, and R. F. Davis

Appl. Phys. Lett. 75, 989 (1999); http://dx.doi.org/10.1063/1.124575 (3 pages) | Cited 8 times

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A study of the homoepitaxial growth of GaN(0001) layers was conducted in situ and in real time using the low-energy electron microscope. The Ga flux was supplied by an evaporative cell while the NH3 flux was supplied via a seeded-beam supersonic jet source. At growth temperatures of 665 °C and 677 °C, smooth GaN(0001) layers with well-defined step structures were grown on GaN(0001) substrates prepared by metalorganic chemical vapor deposition. In general, nonfaceted homoepitaxial layers were achieved when the Ga/NH3 flux ratios exceeded 2, starting with a Ga-covered substrate surface, in the temperature range of 655–710 °C. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology

Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

J. Thiesen, E. Iwaniczko, K. M. Jones, A. Mahan, and R. Crandall

Appl. Phys. Lett. 75, 992 (1999); http://dx.doi.org/10.1063/1.124576 (3 pages) | Cited 27 times

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We demonstrate epitaxial silicon growth of 8 Å/s at temperatures as low as 195 °C, using hot-wire chemical vapor deposition. Characterization by transmission electron microscopy shows epitaxial layers of Si. We briefly discuss various aspects of the process parameter space. Finally, we consider differences in the chemical kinetics of this process when compared to other epitaxial deposition techniques. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Enhanced magnetoresistance in sintered granular manganite/insulator systems

D. K. Petrov, L. Krusin-Elbaum, J. Z. Sun, C. Feild, and P. R. Duncombe

Appl. Phys. Lett. 75, 995 (1999); http://dx.doi.org/10.1063/1.124577 (3 pages) | Cited 120 times

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We report significant enhancements of magnetoresistance in granular (La0.67Ca0.33MnO3)x/(SrTiO3)1−x. The system exhibits a conduction threshold at x = xc ∼ 60%, around which magnetoresistance versus x has a maximum. The composition xc at which maximum enhancement in magnetoresistance is observed is the same at high (around 5 T) and at low (a few hundred Oersted) fields. The enhancement is consistent with the disorder-driven amplification of spin-dependent transport at the structural boundaries of the mixture. © 1999 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects

Observation of optical isolation based on nonreciprocal phase shift in a Mach–Zehnder interferometer

J. Fujita, M. Levy, R. U. Ahmad, R. M. Osgood, M. Randles, C. Gutierrez, and R. Villareal

Appl. Phys. Lett. 75, 998 (1999); http://dx.doi.org/10.1063/1.124949 (3 pages) | Cited 12 times

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Measurements up to 45° nonreciprocal phase shift using the transverse magneto-optical effect have been made in a hybrid Mach–Zehnder waveguide/fiber interferometer. BiLu-IG waveguides of various thicknesses and lengths have been used to study the length and thickness dependence of the effect at λ = 1.55 μm. This interferometric scheme is also employed to observe optical isolation; an extinction ratio of 11 dB is obtained for the 45° nonreciprocal phase shift, in agreement with theoretical predictions. © 1999 American Institute of Physics.  
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07.60.Ly Interferometers
85.70.Sq Magnetooptical devices
42.82.Et Waveguides, couplers, and arrays
07.60.Vg Fiber-optic instruments
42.79.-e Optical elements, devices, and systems
85.70.Ge Ferrite and garnet devices
42.81.Pa Sensors, gyros

Ballistic electron magnetic microscopy: Imaging magnetic domains with nanometer resolution

W. H. Rippard and R. A. Buhrman

Appl. Phys. Lett. 75, 1001 (1999); http://dx.doi.org/10.1063/1.124578 (3 pages) | Cited 36 times

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A variation of ballistic electron emission microscopy has been developed to image magnetic structure in thin-film multilayers with nanometer resolution. In studies of nominally uncoupled Co/Cu/Co trilayer films, magnetic domains and domain-wall motion are readily observable with this technique. In the Co/Cu/Co trilayer system magnetic domains are found to occur on an ∼500-nm-length scale and less, while smaller-scale fluctuations in the ballistic electron transport properties of the system are found on an ∼10 nm length scale. © 1999 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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Lithographically induced self-construction of polymer microstructures for resistless patterning

Stephen Y. Chou, Lei Zhuang, and Linjie Guo

Appl. Phys. Lett. 75, 1004 (1999); http://dx.doi.org/10.1063/1.124579 (3 pages) | Cited 94 times

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We have discovered and developed a method that can directly pattern polymer microstructures of arbitrary shapes without using a resist, exposure, chemical development, and etching. A mask with protruded patterns is placed a distance above an initially flat polymer film cast on a substrate. During a heating cycle that raises the temperature above the polymer’s glass transition temperature and then cooled back to the room temperature, we found that the polymer was attracted to the mask protrusions on their own, forming the mesas that have a lateral dimension identical to that of the mask protrusions, a height equal to the distance between the mask and the substrate, and a relatively steep sidewall. The method, termed lithographically induced self-construction, is important to the fabrication of polymer electronic and optoelectronic devices. © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
85.65.+h Molecular electronic devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Charge density wave ratchet

Mark I. Visscher and Gerrit E. W. Bauer

Appl. Phys. Lett. 75, 1007 (1999); http://dx.doi.org/10.1063/1.124580 (3 pages) | Cited 3 times

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We propose to operate a locally gated charge density wave as an electron pump. Applying an oscillating gate potential with frequency f causes equally spaced plateaus in the sliding charge density wave current separated by ΔI = 2eNf, where N is the number of parallel chains. The effects of thermal noise are investigated. © 1999 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems
71.45.Lr Charge-density-wave systems
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.50.Td Noise processes and phenomena

Low-voltage 0.1 μm organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography

John A. Rogers, Ananth Dodabalapur, Zhenan Bao, and Howard E. Katz

Appl. Phys. Lett. 75, 1010 (1999); http://dx.doi.org/10.1063/1.124581 (3 pages) | Cited 30 times

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This letter describes the combined use of a form of near-field photolithography that relies on a conformable phase masks with microcontact printing and shadow masking for low-cost fabrication of organic transistors and simple complementary inverter circuits with critical dimensions of ∼0.1 μm. The good performance of the devices and their low-voltage operation make them and the fabrication procedures potentially attractive for many applications. © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices

Polarity sensitive bistable color effect in cholesteric liquid crystals with an asymmetric polymer network

D. Sikharulidze, A. Tchanishvili, G. Petriashvili, N. Scaramuzza, R. Barberi, and R. Bartolino

Appl. Phys. Lett. 75, 1013 (1999); http://dx.doi.org/10.1063/1.124582 (2 pages) | Cited 2 times

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A polarity sensitive bistable color effect has been observed in cholesteric liquid crystal—polymer mixtures where a gradient of the polymer network density is created by strongly absorbed UV light. The switching between two stable states is driven by electric pulses of the same amplitude and duration but with opposite electric polarity. The effect could be of great interest for practical applications in color display technology. © 1999 American Institute of Physics.
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42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
42.70.Jk Polymers and organics
78.40.Me Organic compounds and polymers

A piezoelectric micromotor based on acoustic precessional waveguide

Riccardo Carotenuto, Antonio Iula, Massimo Pappalardo, and Nicola Lamberti

Appl. Phys. Lett. 75, 1015 (1999); http://dx.doi.org/10.1063/1.124583 (3 pages) | Cited 1 time

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The piezomotor is composed of a stator, a steel axle, and a rotor. In the stator, which consists of a piezoelectric membrane, a flexural traveling wave is excited via piezoelectric effect. The rotating flexural displacement of the membrane excites a wide precessional wave in the axle; this wave propagates as in a waveguide, producing a precessional motion in the terminal surface of the axle. The rotor consists of a cylindrical permanent magnet, pressed in contact with the top surface of the axle by means of the magnetic force. In this way, a continuous slipping takes place between the terminal surface of the axle and the rotor. We demonstrate that the acoustic waveguide can transfer a good mechanical power (max torque 1.5×10−5 Nm, max rotational velocity 3500 rpm) with unique design flexibility in a variety of different microsystem applications. © 1999 American Institute of Physics.
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84.50.+d Electric motors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.20.Mv Waveguides, wave propagation in tubes and ducts
07.10.Cm Micromechanical devices and systems
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Single pulse nm-size grating formation in polymers using laser ablation with an irradiation wavelength of 355 nm

T. Lippert, T. Gerber, A. Wokaun, D. J. Funk, H. Fukumura, and M. Goto

Appl. Phys. Lett. 75, 1018 (1999); http://dx.doi.org/10.1063/1.124584 (3 pages) | Cited 8 times

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Laser ablation at 355 nm of a specially designed polymer was used as a true single step dry-etching process to create a two-beam interference grating. Gratings with groove spacings of 180 and 1090 nm were created with single laser pulses. Moreover, by varying the laser fluence and/or the angle between the two beams, variable modulation frequencies (depth/spacing) could be obtained. Additional pulses deteriorated the grating quality, demonstrating the importance of the single pulse approach. © 1999 American Institute of Physics.
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42.70.Jk Polymers and organics
42.79.Dj Gratings
81.65.Cf Surface cleaning, etching, patterning
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.86.+b Optical workshop techniques

Control of the initial oxidation on Cu(001) surface by selection of translational energy of O2 molecules

Masanori Yata and Hervé Rouch

Appl. Phys. Lett. 75, 1021 (1999); http://dx.doi.org/10.1063/1.124585 (3 pages) | Cited 11 times

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In the initial oxidation of Cu(001) by O2, the surface is oxidized in a layer-by-layer manner up to one monolayer, followed by Cu2O islanding. The layer-by-layer oxidation is promoted by the increasing translational energy of incident O2 and is insensitive to surface temperature. By contrast, the formation of Cu2O is promoted by the decreasing translational energy of incident O2 and by increasing surface temperature in the temperature range between room temperature and 650 K. Our results demonstrate controllable initial oxidation by the adjustment of the translational energy of O2, offering the prospect of using this approach to aid in the development of new fabrication of metal oxide and Si devices. © 1999 American Institute of Physics.
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81.65.Mq Oxidation

Thermal conveyers

M. Borromeo and F. Marchesoni

Appl. Phys. Lett. 75, 1024 (1999); http://dx.doi.org/10.1063/1.124586 (3 pages) | Cited 5 times

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A tunable noise rectifier is construed in which the net output current results from the interplay of equilibrium thermal noise and a pulsated amplitude modulation propagating along a periodic potential (thermal conveyer). The transport efficiency of such a device attains its maximum for an optimal value of the temperature and the pulse speed. A thermal conveyer whose modulation parameters depend on the output current, may operate as an active noise rectifier for an appropriate setting of the control parameters. © 1999 American Institute of Physics.
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85.80.Fi Thermoelectric devices
05.40.Jc Brownian motion
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