APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Aug 1999

Volume 75, Issue 7, pp. 885-1026

Return to All Sections
back to top
RSS Feeds

Segregation and strain relaxation in Au/Ni multilayers: An in situ experiment

S. Labat, P. Gergaud, O. Thomas, B. Gilles, and A. Marty

Appl. Phys. Lett. 75, 914 (1999); http://dx.doi.org/10.1063/1.124552 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on in situ real-time measurements of both stress and strain during growth of ultrathin layers, with submonolayer sensitivity. The in-plane lattice parameter is measured by reflection high energy electron diffraction and the stress is determined via the curvature measurements. The system studied is Au/Ni (i.e., Au on Ni and Ni on Au). We have evidenced a large asymmetry in the two different growths: Au (on Ni) shows a progressive elastic strain relaxation, whereas Ni (on Au) exhibits a strong interplay between the stress and the interfacial mixing. © 1999 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Ct Interface structure and roughness
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains

Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds

C.-Y. Hung, J. S. Harris, A. F. Marshall, and R. A. Kiehl

Appl. Phys. Lett. 75, 917 (1999); http://dx.doi.org/10.1063/1.124553 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A narrowing of the size distribution of arsenic precipitates in nonstoichiometric GaAs-based compounds is observed during annealing for precipitates in the small size regime of a few nanometers. This improvement in size uniformity is in marked contrast to what is observed for larger precipitates, which coarsen with a widening distribution similar to that of classical Ostwald ripening. Inverse coarsening caused by an elastic interaction between small precipitates due to coherency strain is a possible mechanism for this interesting and potentially useful behavior. © 1999 American Institute of Physics.
Show PACS
81.30.Mh Solid-phase precipitation
81.05.Ea III-V semiconductors
64.75.-g Phase equilibria
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.40.Gh Other heat and thermomechanical treatments

Measurement of mechanical resonance and losses in nanometer scale silicon wires

Dustin W. Carr, S. Evoy, L. Sekaric, H. G. Craighead, and J. M. Parpia

Appl. Phys. Lett. 75, 920 (1999); http://dx.doi.org/10.1063/1.124554 (3 pages) | Cited 152 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present data on nanofabricated suspended silicon wires driven at resonance. The wires are electrostatically driven and detected optically. We have observed wires with widths as small as 45 nm and resonant frequencies as high as 380 MHz. We see a strong dependence of the resonant quality factor on the surface to volume ratio. © 1999 American Institute of Physics.
Show PACS
68.35.Gy Mechanical properties; surface strains
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Interdiffused quantum-well infrared photodetectors for color sensitive arrays

M. B. Johnston, M. Gal, Na Li, Zhanghai Chen, Xingquan Liu, Ning Li, Wei Lu, S. C. Shen, L. Fu, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 75, 923 (1999); http://dx.doi.org/10.1063/1.124555 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Proton implantation and rapid thermal annealing were used to tune the infrared spectral response of quantum-well infrared photodetectors (QWIP) by up to 1.4 μm. Multiple proton implants at energies between 200 and 420 keV were used to create homogeneous quantum-well intermixing throughout the device’s multiple-quantum-well structure. Photoluminescence and spectral response measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5×1015 protons cm−2. By using a mask during implantation, a method of constructing a color sensitive array is proposed. © 1999 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.uj III-V and II-VI semiconductors
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Kinetic Monte Carlo simulations of nucleation on a surface with periodic strain: Spatial ordering and island-size distribution

Thomas R. Mattsson and Horia Metiu

Appl. Phys. Lett. 75, 926 (1999); http://dx.doi.org/10.1063/1.124556 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We use kinetic Monte Carlo simulations to study nucleation of adsorbate islands on a solid surface on which a periodic strain field has been imposed. We show that, in spite of its very small effect on the diffusion constant of the atoms, the field orders the ensemble of islands. Better ordering and a narrower size distribution are obtained when the ensemble of islands produced by nucleation is coarsened. © 1999 American Institute of Physics.
Show PACS
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
64.60.Q- Nucleation
02.50.Ng Distribution theory and Monte Carlo studies
02.70.Rr General statistical methods
68.35.Fx Diffusion; interface formation

Boron nitride nanotubes, webs, and coexisting amorphous phase formed by the plasma jet method

Yoshiki Shimizu, Yusuke Moriyoshi, Hideki Tanaka, and Shojiro Komatsu

Appl. Phys. Lett. 75, 929 (1999); http://dx.doi.org/10.1063/1.124557 (3 pages) | Cited 20 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Boron nitride (BN) nanotubes were prepared by a high-temperature plasma jet method. While the BN nanotubes were found in quantity on the surface of a BN sintered disk, amorphous BN webs were found dominant in the water-cooled collector. These structures were studied on the basis of transmission electron microscopy observations. One of them was composed of 21 layers grown coaxially with a regular spacing of 0.34 nm and their tip ends were terminated with parallel bases of the coaxial cylindrical shapes. The diameter of the innermost tube was 0.6 nm and this dimension is in fairly good agreement with the diameters of the smallest BN fullerenes. © 1999 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
61.46.-w Structure of nanoscale materials
61.43.Er Other amorphous solids

Temperature tuning of the stop band in transmission spectra of liquid-crystal infiltrated synthetic opal as tunable photonic crystal

Katsumi Yoshino, Yuki Shimoda, Yoshiaki Kawagishi, Keizo Nakayama, and Masanori Ozaki

Appl. Phys. Lett. 75, 932 (1999); http://dx.doi.org/10.1063/1.124558 (3 pages) | Cited 173 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nematic liquid crystals and smectic liquid crystals can be infiltrated into a three-dimensional periodic array of interconnected nanosize voids in opal films prepared by sedimentation of SiO2 spheres of various diameters. The optical stop band in the transmission spectra of opals shifts drastically by the infiltration of liquid crystals. The stop band is also found to shift at the phase transition points with changing temperature. This effect enables the tuning of optical properties of opals as a prototype tunable photonic crystal. This phenomenon can also be used as a measurement method for the refractive index. © 1999 American Institute of Physics.  
Show PACS
42.70.Qs Photonic bandgap materials
42.70.Df Liquid crystals
78.40.-q Absorption and reflection spectra: visible and ultraviolet
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
64.70.M- Transitions in liquid crystals
78.30.-j Infrared and Raman spectra
78.66.Sq Composite materials

Solid-state amorphization at tetragonal-Ta/Cu interfaces

Kee-Won Kwon, Hoo-Jeong Lee, and Robert Sinclair

Appl. Phys. Lett. 75, 935 (1999); http://dx.doi.org/10.1063/1.124559 (3 pages) | Cited 44 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter describes the formation of a thin amorphous layer at the tetragonal-Ta/Cu interfaces, which appear in copper metallization structures of microelectronic devices. The disordered layer grows up to 4 nm when annealed at between 400 and 600 °C. Since Ta and Cu are immiscible according to thermodynamic data, this is an unusual observation. A mechanism for the amorphous phase formation is proposed using both physical and chemical considerations. A high content of Cu is detected in the Ta layer up to 5 nm from the interface when annealed at 600 °C. Although the adhesion is promoted by the interface reaction, a sufficiently thick Ta underlayer is recommended for efficient blocking of Cu diffusion. Neither solid-state amorphization nor Cu diffusion into Ta is observed at bcc-Ta/Cu interfaces. © 1999 American Institute of Physics.
Show PACS
68.35.Ct Interface structure and roughness
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
85.40.Ls Metallization, contacts, interconnects; device isolation

Step decoration during deposition of Co on Ag(001) by ultralow energy ion beams

J. Dekoster, B. Degroote, H. Pattyn, G. Langouche, A. Vantomme, and S. Degroote

Appl. Phys. Lett. 75, 938 (1999); http://dx.doi.org/10.1063/1.124560 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A possibility for decorating atomic steps on single-crystal surfaces by using ultralow energy ion beams is reported. Isotopically pure ion beams are produced by a mass separator and subsequently decelerated by an electrostatic lens. The lens was designed to allow sweeping of the ion beam in order to obtain a uniform deposition over a large area. The preferred sites of single Co atoms on Ag are investigated with in situ scanning tunneling microscopy measurements. A clear indication is found that by increasing the energy of the deposited Co to several electron volts, an enhanced Co decoration of the Ag steps is induced. This technology opens perspectives for an increasing number of elements which can form self-organized nanostructures such as atomic wires on vicinal crystal surfaces. © 1999 American Institute of Physics.
Show PACS
81.15.Jj Ion and electron beam-assisted deposition; ion plating
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
81.05.Bx Metals, semimetals, and alloys

Activation volume for antimony diffusion in silicon and implications for strained films

Yuechao Zhao, Michael J. Aziz, Hans-J. Gossmann, Salman Mitha, and David Schiferl

Appl. Phys. Lett. 75, 941 (1999); http://dx.doi.org/10.1063/1.124561 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The diffusivity of Sb in Si is retarded by pressure, characterized at 860 °C by an activation volume of V∗ = +0.07±0.02 times the Si atomic volume. V∗ is close to values inferred from atomistic calculations for a vacancy mechanism. Our results for hydrostatic pressure are used to predict the effect of biaxial strain on Sb diffusion. The prediction matches measured behavior for Sb diffusion in biaxially strained Si and Si–Ge films. This work lends additional support to the predominance of the vacancy mechanism for Sb diffusion and demonstrates the first steps in the development of a capability for predicting the effect of nonhydrostatic stress on diffusion. © 1999 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)

A. Thamm, O. Brandt, Y. Takemura, A. Trampert, and K. H. Ploog

Appl. Phys. Lett. 75, 944 (1999); http://dx.doi.org/10.1063/1.124562 (3 pages) | Cited 30 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the quality of GaN layers directly grown on 6H–SiC(0001) substrates by reactive molecular-beam epitaxy. Despite a pure three-dimensional nucleation, step-flow growth is achieved by in situ adjusting conditions such that the (2×2) reconstruction observed during growth is maximized in intensity. The resulting surface morphology exhibits large terraces separated by mono- and multiatomic steps, and is clearly superior to that obtained by plasma-assisted growth. Furthermore, the structural and optical properties of these layers are comparable to those of layers grown by plasma-assisted molecular-beam epitaxy. © 1999 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Time-resolved Raman spectroscopy of polytetrafluoroethylene under laser-driven shock compression

Kunihiko Wakabayashi, Kazutaka G. Nakamura, Ken-ichi Kondo, and Masatake Yoshida

Appl. Phys. Lett. 75, 947 (1999); http://dx.doi.org/10.1063/1.124563 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanosecond time-resolved Raman spectroscopy has been performed to study polymer films, polytetrafluoroethylene, under laser-driven shock compression at about 2.3 GPa. A vibrational line at 1895 cm−1, which is attributed to the symmetric stretching mode of a C2F4 monomer produced by depolymerization, appears under the shock compression, and its intensity increases along the propagation of the shock wave. © 1999 American Institute of Physics.
Show PACS
78.30.Jw Organic compounds, polymers
61.41.+e Polymers, elastomers, and plastics
78.66.Qn Polymers; organic compounds
78.47.-p Spectroscopy of solid state dynamics
62.50.-p High-pressure effects in solids and liquids
63.50.-x Vibrational states in disordered systems

Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

J. Wang, M. Nozaki, M. Lachab, Y. Ishikawa, R. S. Qhalid Fareed, T. Wang, M. Hao, and S. Sakai

Appl. Phys. Lett. 75, 950 (1999); http://dx.doi.org/10.1063/1.124564 (3 pages) | Cited 15 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
InGaN quantum dots (QDs) have been formed by metalorganic chemical vapor deposition selective growth on Si-patterned GaN/sapphire substrates. The QDs were fabricated on GaN plinths grown within nanoscale circular windows opened in the Si mask by both focused ion-beam irradiation and photoassisted wet chemical etching. Using this process, the epitaxial growth of GaN plinths could be achieved on an underlying GaN layer spared from process-induced damage. The optical properties of the InGaN QDs have been investigated by low-temperature cathodoluminescence measurements. Compared to the band-gap emission from a reference sample of InGaN/GaN multiple quantum wells, the evident blueshift of the emission peak from the InGaN QDs was demonstrated. This result suggests that the carriers in the InGaN QDs were three-dimensionally confined. © 1999 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close