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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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On the long pulse operation of an x-ray preionized, gas discharge pumped ArF excimer laser

L. Feenstra, H. M. J. Bastiaens, P. J. M. Peters, and W. J. Witteman

Appl. Phys. Lett. 75, 1033 (1999); http://dx.doi.org/10.1063/1.124587 (3 pages) | Cited 1 time

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Long laser pulses of up to 120 ns full width at half maximum have been achieved in a discharge pumped ArF laser, using x-ray preionization and prepulse-mainpulse excitation using a magnetic switch. For the realization of these long pulse lengths a fast current rise time in the first stage of the discharge is a crucial factor. The laser performance depends strongly on the discharge stability, and thus on the partial pressure of the fluorine in the laser gas mixture. © 1999 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals

M. Boroditsky, T. F. Krauss, R. Coccioli, R. Vrijen, R. Bhat, and E. Yablonovitch

Appl. Phys. Lett. 75, 1036 (1999); http://dx.doi.org/10.1063/1.124588 (3 pages) | Cited 150 times

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We describe a promising thin-slab light-emitting diode (LED) design, which uses a highly efficient coherent external scattering of trapped light by a two-dimensional (2D) photonic crystal. The light generation region was an unpatterned heterostructure surrounded by the light extraction region, a thin film patterned as a 2D photonic crystal. A six-fold photoluminescence enhancement was observed compared to an unpatterned thin film LED. That corresponded to 70% external quantum efficiency. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Imaging local index variations in an optical waveguide using a tapping-mode near-field scanning optical microscope

Din Ping Tsai, Chi Wen Yang, Shu-Zee Lo, and Howard E. Jackson

Appl. Phys. Lett. 75, 1039 (1999); http://dx.doi.org/10.1063/1.124589 (3 pages) | Cited 10 times

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Imaging local index variations by using a form of modulated near-field scanning optical microscopy is suggested. To test these ideas, we have probed two different optical structures, one a well-characterized BK-7 glass prism in the total internal reflection configuration, and the other a side-polished optical fiber waveguide with a step index of refraction of 4.5×10−3. Using a recently developed tapping-mode tuning-fork near-field scanning optical microscope, we have obtained images showing distinct local index variations. This method may have applicability to the characterization of a wide variety of optical waveguide structures. © 1999 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.65.Wi Nonlinear waveguides

Accumulation of positive charges in organic light-emitting diodes with a double-layer structure

Michio Matsumura, Atsushi Ito, and Yuichiro Miyamae

Appl. Phys. Lett. 75, 1042 (1999); http://dx.doi.org/10.1063/1.124590 (3 pages) | Cited 41 times

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The current–voltage properties of organic light-emitting diodes were analyzed based on the assumptions that: (1) they are determined by the carrier injection processes, and (2) the charges are accumulated near the organic/organic interface. From the results, the amount of accumulated charges was estimated. The amount was also determined from the analyses of transient currents observed by applying pulsed voltage to the devices. By deconvoluting the current components, the discharge of accumulated charges from the bulk of the organic layers was evaluated. The amounts determined by these two methods showed good agreement. All the results indicated that positive charges are accumulated near the organic/organic interface and that the amount increases as the electron injection ability of the cathode is lowered. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

GaAs/AlGaAs-based microcylinder lasers emitting at 10 μm

S. Gianordoli, L. Hvozdara, G. Strasser, W. Schrenk, K. Unterrainer, and E. Gornik

Appl. Phys. Lett. 75, 1045 (1999); http://dx.doi.org/10.1063/1.124591 (3 pages) | Cited 24 times

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The realization of electrically pumped GaAs/AlGaAs quantum cascade microcylinder lasers is reported. Design and fabrication of special resonator shapes (microcylinder and ridge waveguide) are presented. Threshold characteristics and optical output of different resonators of the same quantum cascade laser material emitting at 10 μm are investigated. A low threshold current of 318 mA is obtained for a microcylinder resonator with circular cross section. The maximum working temperature of the microcylinder lasers is 165 K. Single mode emission is detected with a side mode suppression ratio better than 20 dB. © 1999 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical method for two-dimensional ultrasonic detection

G. Paltauf, H. Schmidt-Kloiber, K. P. Köstli, and M. Frenz

Appl. Phys. Lett. 75, 1048 (1999); http://dx.doi.org/10.1063/1.124592 (3 pages) | Cited 25 times

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Two-dimensional detection of ultrasonic waves is based on pressure-induced changes of optical reflectance at a glass–liquid interface, imaged with a time-gated video camera. The method is used to record optoacoustic waves generated after irradiation of optically absorbing targets with 6 ns long laser pulses. Measurements of absolute pressure values with high temporal and spatial resolution (in the range of 10 ns and 10 μm, respectively) is demonstrated. The sensitivity is varied between 0.19% and 0.81% gray level modulation per bar. The detector plane is optically transparent, making it possible to irradiate the sample through the detector without disturbing the acoustic measurement. Two-dimensional recording of ultrasonic waves is ideally suited for the analysis of acoustic emission from small sources and for optoacoustic imaging of optical absorption differences in an opaque material. © 1999 American Institute of Physics.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.80.Ev Acoustical measurement methods in biological systems and media
87.50.Y- Biological effects of acoustic and ultrasonic energy
07.60.Hv Refractometers and reflectometers

Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes

N. Y. Li, C. P. Hains, K. Yang, J. Lu, J. Cheng, and P. W. Li

Appl. Phys. Lett. 75, 1051 (1999); http://dx.doi.org/10.1063/1.124593 (3 pages) | Cited 13 times

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We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17–1.20 μm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm2 has been successfully demonstrated. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Patterning of (Pb, La)(Zr, Ti)O3 waveguides for fabricating micro-optics using wet etching and solid-phase epitaxy

K. Nashimoto, K. Haga, M. Watanabe, S. Nakamura, and E. Osakabe

Appl. Phys. Lett. 75, 1054 (1999); http://dx.doi.org/10.1063/1.124594 (3 pages) | Cited 13 times

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The patterning process of (Pb, La)(Zr, Ti)O3 heterostructure waveguides was examined for fabricating micro-optics, including channels and lenses. After the patterning of the amorphous thin films derived from spin-cast methoxyethoxide precursors by a wet etching, the patterned amorphous film was crystallized by solid-phase epitaxy. A 5-μm-wide ridge-type channel waveguide was fabricated in a Pb0.91La0.09(Zr0.65Ti0.35)O3/Pb(Zr0.52Ti0.48)O3 heterostructure on a SrTiO3 (100) substrate by the process. The optical confinement was successfully observed. A mode index lens was also fabricated in the Pb0.91La0.09(Zr0.65Ti0.35)O3/Pb(Zr0.30Ti0.70)O3 heterostructure on the SrTiO3 (100) substrate. A deflection of the collimated light by the lens was observed. © 1999 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
81.65.Cf Surface cleaning, etching, patterning
81.15.Np Solid phase epitaxy; growth from solid phases
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Photonic band-gap effects upon the light emission from a dye–polymer–opal composite

S. G. Romanov, T. Maka, C. M. Sotomayor Torres, M. Müller, and R. Zentel

Appl. Phys. Lett. 75, 1057 (1999); http://dx.doi.org/10.1063/1.124595 (3 pages) | Cited 33 times

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A polymeric photonic crystal formed by impregnating an opal with a Coumarin 6 dye containing polymer has been prepared and its emission properties studied by angular-resolved photoluminescence. A strong spectral redistribution of the luminescence intensity was observed in the dye-polymer-opal compared to that of the dye-polymer reference sample. The emission spectrum shows a marked distortion compared with the reference sample, which changes with the rotation of the crystal due to the angular dispersion of the stop band. Under increasing optical pumping power, a band of amplified spontaneous emission was observed at the stop-band edge. The angular dispersion of the stop band in the luminescence observed from the back surface exhibits in a strong directionality at the maximum of the dye emission band. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
78.55.-m Photoluminescence, properties and materials
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems

Broadband phase-matched difference frequency mixing of femtosecond pulses in GaSe: Experiment and theory

R. A. Kaindl, F. Eickemeyer, M. Woerner, and T. Elsaesser

Appl. Phys. Lett. 75, 1060 (1999); http://dx.doi.org/10.1063/1.124596 (3 pages) | Cited 46 times

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Phase-matched difference frequency mixing within the broad spectrum of single 13 fs pulses from a cavity-dumped, mode-locked Ti:sapphire laser in a GaSe crystal allows the generation of femtosecond mid-infrared pulses, continuously tunable in the wavelength range from 7 to 20 μm. Pulse durations down to 95 fs at 9.3 μm are directly measured. Model calculations including the full dispersion of GaSe show that the chirp of the pump pulses allows to change both the pulse duration and conversion efficiency obtained in the nonlinear process, in agreement with the experiment. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Light scattering from dipole and quadrupole nanoshell antennas

S. J. Oldenburg, G. D. Hale, J. B. Jackson, and N. J. Halas

Appl. Phys. Lett. 75, 1063 (1999); http://dx.doi.org/10.1063/1.124597 (3 pages) | Cited 91 times

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Metal nanoshells are nanoscale optical components that allow for the controllable redirection of electromagnetic radiation via careful engineering of their multilayer structures. By varying the core size and shell thickness of these nanoparticles, nanoscale “antennas” are constructed that can be selectively driven into a dipolar or quadrupolar oscillation pattern. With scattering cross sections many times larger than their physical cross section, these antennas efficiently couple to the incident electromagnetic wave. These structures can focus, redirect, or split the incident light with subwavelength precision, and may find useful applications in the remote coupling of electromagnetic signals into nanoscale machines or devices. © 1999 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
81.07.-b Nanoscale materials and structures: fabrication and characterization
84.40.Ba Antennas: theory, components and accessories
78.66.Bz Metals and metallic alloys
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings
61.46.-w Structure of nanoscale materials
42.25.Fx Diffraction and scattering

Noise in slow saturable absorber mode-locked semiconductor lasers

J. L. A. Dubbeldam and D. Lenstra

Appl. Phys. Lett. 75, 1066 (1999); http://dx.doi.org/10.1063/1.124598 (3 pages) | Cited 1 time

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A theoretical investigation of the influence of noise in a passively mode-locked semiconductor laser with a slow saturable absorber is presented. Difference equations for the pulse energy and jitter are derived. We find that noise leads to increased pulse durations and considerable jitter. The influence of noise, for systems with and without self-phase modulation and group velocity dispersion, on the pulse energy and stability regions is discussed. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
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Thin gate oxide behavior during plasma patterning of silicon gates

L. Vallier, L. Desvoivres, M. Bonvalot, and O. Joubert

Appl. Phys. Lett. 75, 1069 (1999); http://dx.doi.org/10.1063/1.124599 (2 pages) | Cited 15 times

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We have evidenced an unexpected behavior of thin gate oxide layers (thickness in the range 2–4 nm) exposed to plasma processes developed for the patterning of 0.1 μm silicon gates. During the low-energy overetch step of the process, an oxidation of the bulk underlying silicon takes place, leading to the growth of the gate oxide layer. Experimental results obtained from in situ kinetic and spectroscopic ellipsometry measurements and supported by x-ray photoelectron spectroscopy analyses are presented to highlight this phenomenon. © 1999 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Cy Elemental semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.65.Mq Oxidation
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Recalescence after solidification in Ge films melted by picosecond laser pulses

J. Siegel, J. Solis, and C. N. Afonso

Appl. Phys. Lett. 75, 1071 (1999); http://dx.doi.org/10.1063/1.124600 (3 pages) | Cited 19 times

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Thin amorphous Ge films on glass substrates are irradiated by single picosecond (ps) laser pulses and the induced melting and solidification process is followed by means of real-time reflectivity measurements with ps resolution using a setup based on a streak camera. Due to the excellent time resolution achieved in single exposure, the recalescence process occurring upon solidification can be completely resolved by means of an all-optical technique. The results are consistent with the bulk nucleation of the amorphous phase in the supercooled liquid at an extremely large nucleation rate. The massive release of solidification heat causes the reheating and partial remelting of the film after its complete solidification. The occurrence of recalescence after solidification is responsible for the formation of the crystalline phase finally obtained. © 1999 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.D- Solid-liquid transitions
42.62.-b Laser applications
78.66.Jg Amorphous semiconductors; glasses
78.47.-p Spectroscopy of solid state dynamics
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators

Room temperature manipulation of the heterofullerene C59N on Si(100)-2×1

M. J. Butcher, F. H. Jones, P. Moriarty, P. H. Beton, K. Prassides, K. Kordatos, and N. Tagmatarchis

Appl. Phys. Lett. 75, 1074 (1999); http://dx.doi.org/10.1063/1.124601 (3 pages) | Cited 15 times

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The absorption of the heterofullerene C59N on the Si(100)-2×1 surface has been investigated using scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. The molecules are adsorbed in monomer form in the troughs between silicon dimer rows. It is possible to use the tip of the STM to manipulate the molecules parallel and perpendicular to the dimer rows in a controlled fashion at room temperature. To determine the stability of the C59N monomer we have examined the response of pairs of molecules to STM manipulation and found that the Si(100)-2×1 surface inhibits conversion to (C59N)2 dimers. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Scratching resistance of diamond-like carbon coatings in the subnanometer regime

A. Wienss, G. Persch-Schuy, M. Vogelgesang, and U. Hartmann

Appl. Phys. Lett. 75, 1077 (1999); http://dx.doi.org/10.1063/1.124602 (3 pages) | Cited 13 times

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In order to examine the scratching resistance of ultrathin hydrogenated amorphous carbon (a-C:H) coatings used in magnetic storage devices, a large number of scratches with reproducible residual groove depths well below 1 nm has been examined. All measurements were carried out with an atomic force microscope and diamond-tipped cantilevers. The analysis of such shallow scratches is made possible by means of an image processing procedure which minimizes surface roughness effects using subtraction imaging. This method was applied to a series of sputter-deposited, fully aged, unlubricated amorphous coatings with different hydrogenations. For low hydrogen content in the sputtering gas, the scratching resistance decreased with an increasing amount of hydrogen, in accordance with many other experiments. In contrast, an unusual slight improvement of the scratching resistance for a further increase of hydrogenation was obtained. © 1999 American Institute of Physics.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
75.50.Ss Magnetic recording materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Surface sensitivity effects with local probe scanning Auger–scanning electron microscopy

D. T. L. van Agterveld, G. Palasantzas, and J. Th. M. De Hosson

Appl. Phys. Lett. 75, 1080 (1999); http://dx.doi.org/10.1063/1.124603 (3 pages) | Cited 4 times

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This letter concentrates on a quantitative description of surface roughness effects on Auger peak-line profiles for pure and alloyed specimens. The nanometer lateral electron probe size of the order of 10 nm yielded peak-line profiles that capture surface topology variations down to nanometer-length scales. Surface roughness leads to peak-intensity fluctuations, which are described within the weak roughness limit by a simple form, I(r) ≈ Iav[1+βh(r)]. Iav is the average peak intensity, h(r) represents the roughness fluctuation along a lateral in-planar distance r, and β is a constant (<1). In addition, analyses of the peak-difference correlation function Iz(r) = 〈∣I(r)−I(0)∣2〉1/2 showed a power-law behavior Iz(r)∝rα with α ranging between 0.7 and 1 at small-length scales, i.e., for r≪ξ, with ξ a peak correlation length that was comparable to average specimen cluster sizes. © 1999 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Fv Electron impact: Auger emission
07.81.+a Electron and ion spectrometers

Boron pileup and clustering in silicon-on-insulator films

H.-H. Vuong, H.-J. Gossmann, L. Pelaz, G. K. Celler, D. C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V. C. Venezia, C. S. Rafferty, S. J. Hillenius, J. McKinley, F. A. Stevie, and C. Granger

Appl. Phys. Lett. 75, 1083 (1999); http://dx.doi.org/10.1063/1.124604 (3 pages) | Cited 13 times

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The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting (a) boron pileup at both upper and lower interfaces of the Si film, and (b) no reduction of the boron clustering in SOI compared with bulk silicon. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals
64.75.-g Phase equilibria
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.J- Point defects and defect clusters

Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot

Z. F. Ren, Z. P. Huang, D. Z. Wang, J. G. Wen, J. W. Xu, J. H. Wang, L. E. Calvet, J. Chen, J. F. Klemic, and M. A. Reed

Appl. Phys. Lett. 75, 1086 (1999); http://dx.doi.org/10.1063/1.124605 (3 pages) | Cited 170 times

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Patterned growth of freestanding carbon nanotube(s) on submicron nickel dot(s) on silicon has been achieved by plasma-enhanced-hot-filament-chemical-vapor deposition (PE-HF-CVD). A thin film nickel grid was fabricated on a silicon wafer by standard microlithographic techniques, and the PE-HF-CVD was done using acetylene (C2H2) gas as the carbon source and ammonia (NH3) as a catalyst and dilution gas. Well separated, single carbon nanotubes were observed to grow on the grid. The structures had rounded base diameters of approximately 150 nm, heights ranging from 0.1 to 5 μm, and sharp pointed tips. Transmission electron microscopy cross-sectional image clearly showed that the structures are indeed hollow nanotubes. The diameter and height depend on the nickel dot size and growth time, respectively. This nanotube growth process is compatible with silicon integrated circuit processing. Using this method, devices requiring freestanding vertical carbon nanotube(s) such as scanning probe microscopy, field emission flat panel displays, etc. can be fabricated without difficulty. © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.48.-c Structure of fullerenes and related hollow and planar molecular structures

Large supercooled liquid region and phase separation in the Zr–Ti–Ni–Cu–Be bulk metallic glasses

C. C. Hays, C. P. Kim, and W. L. Johnson

Appl. Phys. Lett. 75, 1089 (1999); http://dx.doi.org/10.1063/1.124606 (3 pages) | Cited 46 times

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Results of calorimetric, differential thermal analysis, and structural measurements are presented for a series of bulk metallic glass forming compositions in the Zr–Ti–Cu–Ni–Be alloy system. The calorimetric data for five alloys, prepared along the tie line between phase separating and nonphase separating compositions, show that the transition from phase separating to nonphase separating behavior is smooth. The bulk glasses near the center of the tie line exhibit large supercooled liquid regions: ΔT ≈ 135 K, the largest known for a bulk metallic glass. © 1999 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses
64.75.-g Phase equilibria
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
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Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature

J. F. Chen, J. S. Wang, P. Y. Wang, and H. Z. Wong

Appl. Phys. Lett. 75, 1092 (1999); http://dx.doi.org/10.1063/1.124607 (3 pages) | Cited 2 times

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Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea = 0.45±0.02 eV, σ = 6±4×10−17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layers

A. Tabata, J. R. Leite, A. P. Lima, E. Silveira, V. Lemos, T. Frey, D. J. As, D. Schikora, and K. Lischka

Appl. Phys. Lett. 75, 1095 (1999); http://dx.doi.org/10.1063/1.124608 (3 pages) | Cited 28 times

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Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1−xN (0 ⩽ x ⩽ 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A1 (TO) and E1 (TO) phonon frequencies of the hexagonal InxGa1−xN alloy. © 1999 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

C. Kirchner, V. Schwegler, F. Eberhard, M. Kamp, K. J. Ebeling, K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski

Appl. Phys. Lett. 75, 1098 (1999); http://dx.doi.org/10.1063/1.124609 (3 pages) | Cited 20 times

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Carefully optimized low-pressure metalorganic vapor phase epitaxy is used for homoepitaxial growth on distinctively pretreated GaN bulk single crystal substrates. Thereby, outstanding structural and optical qualities of the material have been achieved, exhibiting photoluminescence linewidths for bound excitons as narrow as 95 μeV. These extremely sharp lines reveal fine structures, not reported for GaN. Additionally, all three free excitons as well as their excited states are visible in low-temperature photoluminescence at 2 K. These transitions are clearly identified by reflectance measurements. X-ray diffraction analysis of these layers reveal about 20 arcsec linewidth for the (0004) reflex using CuKα radiation. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.35.-y Excitons and related phenomena

Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy

Q. Yang, D. A. Kellogg, C. Lin, G. E. Stillman, and N. Holonyak

Appl. Phys. Lett. 75, 1101 (1999); http://dx.doi.org/10.1063/1.124948 (3 pages) | Cited 7 times

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Data are presented on the room-temperature, photopumped, continuous laser operation of multiple-well InGaP–GaAs quantum-well heterostructures and superlattices grown by low-pressure metalorganic chemical vapor deposition. Continuous laser operation at room temperature indicates high material quality and minimal nonradiative recombination at the heterointerfaces. The lasing wavelength near the GaAs band gap is consistent with weak bandfilling, and small quantum confinement of electrons and large confinement of holes (mh>me, ΔEv>ΔEc). Double-crystal x-ray diffraction and transmission electron microscopy data confirm the high material quality and heterointerface abruptness. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Ct Interface structure and roughness
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

Rama Venkatasubramanian, Thomas Colpitts, Brooks O’Quinn, Sandra Liu, Nadia El-Masry, and Michael Lamvik

Appl. Phys. Lett. 75, 1104 (1999); http://dx.doi.org/10.1063/1.124610 (3 pages) | Cited 46 times

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We describe a simple, yet phenomenologically very different, low-temperature modification to the conventional metal–organic chemical vapor deposition. It has been applied to the epitaxy of hexagonal-phased Bi2Te3/Sb2Te3 superlattices on zinc-blende GaAs substrates. The modification enables a two-dimensional, layer-by-layer, epitaxy instead of a three-dimensional islanded growth. Therefore, this approach is of generic importance to the epitaxy of many electronic and magnetic materials and their superlattices. High-resolution transmission electron microscopy studies indicate that the interface between the GaAs substrate and Bi2Te3 film is qualitatively defect free and that periodic structures are formed in the Bi2Te3/Sb2Te3 superlattices, with one of the individual layers as small as 10 Å. Such ultra-short-period superlattices offer significantly higher carrier mobilities than their respective solid-solution alloys, apparently due to the elimination of alloy scattering and the minimal effects of random interface scattering on carrier transport. This represents one of the successful observations of enhanced carrier mobilities in monolayer-range superlattices. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Lw Thermoelectric effects
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