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Applied Physics Letters / Volume 75 / Issue 8 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 75, 1119 (1999); http://dx.doi.org/10.1063/1.124615 (3 pages)

Picosecond time-resolved cyclotron resonance in semiconductors

J. Kono1, A. H. Chin1, A. P. Mitchell1, T. Takahashi2, and H. Akiyama2

1Stanford Picosecond Free Electron Laser Center, W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, California 94305
2Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan

(Received 28 January 1999; accepted 1 July 1999)

A promising method for studying intraband carrier dynamics in semiconductors is monitoring the evolution of far-infrared (FIR) absorption induced by photoexcited carriers. By monitoring the photoinduced FIR absorption as a function of magnetic field, we performed time-resolved cyclotron resonance of photocreated electrons in InSb with picosecond resolution. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, III-V semiconductors, cyclotron resonance, infrared spectra, time resolved spectra, carrier lifetime, carrier mobility

PACS

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 78.47.-p

    Spectroscopy of solid state dynamics

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.124615

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Umlauff, J. Hoffmann, H. Kalt, W. Langbein, J. M. Hvam, M. Scholl, J. Söllner, M. Heuken, B. Jobst, and D. Hommel, Phys. Rev. B 57, 1390 (1998).

    W. Kohn, Phys. Rev. 123, 1242 (1961).

    B. Lax, J. G. Mavroides, H. J. Zeiger, and R. J. Keyes, Phys. Rev. 122, 31 (1961).


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