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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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Nanomachining of mesoscopic electronic devices using an atomic force microscope

H. W. Schumacher, U. F. Keyser, U. Zeitler, R. J. Haug, and K. Eberl

Appl. Phys. Lett. 75, 1107 (1999); http://dx.doi.org/10.1063/1.124611 (3 pages) | Cited 27 times

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An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors
73.23.-b Electronic transport in mesoscopic systems
85.35.Ds Quantum interference devices
85.35.Gv Single electron devices

Refractive index and hygroscopic stability of AlxGa1−xAs native oxides

D. C. Hall, H. Wu, L. Kou, Y. Luo, R. J. Epstein, O. Blum, and H. Hou

Appl. Phys. Lett. 75, 1110 (1999); http://dx.doi.org/10.1063/1.124612 (3 pages) | Cited 11 times

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We present prism coupling measurements on AlxGa1−xAs native oxides showing the dependence of refractive index on composition (0.3 ⩽ x ⩽ 0.97), oxidation temperature (400 ⩽ T ⩽ 500), and carrier gas purity. Index values range from n = 1.490 (x = 0.9, 400 °C) to 1.707 (x = 0.3, 500 °C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1−xAs (x ⩽ 0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O2 in the N2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1−x)2O3 oxide phase. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.65.Mq Oxidation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.66.Bi Elemental solids
61.66.Dk Alloys

Direct observation of hot-electron energy distribution in silicon metal–oxide–semiconductor field-effect transistors

T. Sakamoto, H. Kawaura, T. Baba, and T. Iizuka

Appl. Phys. Lett. 75, 1113 (1999); http://dx.doi.org/10.1063/1.124613 (3 pages) | Cited 4 times

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We have directly observed the energy distributions of hot electrons in Si metal–oxide–semiconductor field-effect transistors. We used a lateral hot-electron transistor employing two potential barriers (an emitter barrier and a collector barrier) that divided the Si surface into three regions (the emitter, base, and collector). For an emitter-base voltage of −1.04 V, hot electrons with an excess energy of 0.7 eV were detected at the collector. The ratio of hot electrons to the injected electrons was 1.3%. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0 ⩽ x ⩽ 1.0 films

J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, and R. L. Masaitis

Appl. Phys. Lett. 75, 1116 (1999); http://dx.doi.org/10.1063/1.124614 (3 pages) | Cited 46 times

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The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x ≥ 14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x ≥ 14%. The results show the important role of Gd2O3 in the (Ga2O3)1−x(Gd2O3)x dielectric films for effective passivation of GaAs. © 1999 American Institute of Physics.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
73.61.Ng Insulators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Picosecond time-resolved cyclotron resonance in semiconductors

J. Kono, A. H. Chin, A. P. Mitchell, T. Takahashi, and H. Akiyama

Appl. Phys. Lett. 75, 1119 (1999); http://dx.doi.org/10.1063/1.124615 (3 pages) | Cited 6 times

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A promising method for studying intraband carrier dynamics in semiconductors is monitoring the evolution of far-infrared (FIR) absorption induced by photoexcited carriers. By monitoring the photoinduced FIR absorption as a function of magnetic field, we performed time-resolved cyclotron resonance of photocreated electrons in InSb with picosecond resolution. © 1999 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Cycling endurance of silicon–oxide–nitride–oxide–silicon nonvolatile memory stacks prepared with nitrided SiO2/Si(100) interfaces

S. Habermehl, R. D. Nasby, and M. J. Rightley

Appl. Phys. Lett. 75, 1122 (1999); http://dx.doi.org/10.1063/1.124616 (3 pages) | Cited 5 times

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The effects of nitrided SiO2/Si(100) interfaces upon cycling endurance in silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memory transistors are investigated. Analysis of metal–oxide–silicon field-effect transistor subthreshold characteristics indicate cycling degradation to be a manifestation of interface trap generation at the tunnel oxide/silicon interface. After 106 write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance over stacks prepared with non-nitrided tunnel oxides. If the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. For this case, a mechanism for latent nitridation of the tunnel oxide/silicon interface is proposed. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Mq Oxidation
85.30.De Semiconductor-device characterization, design, and modeling
73.20.-r Electron states at surfaces and interfaces
73.40.Gk Tunneling

Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film

Yu Chen and Sigurd Wagner

Appl. Phys. Lett. 75, 1125 (1999); http://dx.doi.org/10.1063/1.124617 (3 pages) | Cited 27 times

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We report a p channel thin-film transistor (TFT) made of directly deposited microcrystalline silicon (μc-Si). By integrating this p TFT with its n channel counterpart on a single μc-Si film, we fabricated a complementary metal-silicon oxide-silicon (CMOS) inverter of deposited μc-Si. The μc-Si channel material was grown at 320 °C by plasma-enhanced chemical vapor deposition in a process similar to the deposition of hydrogenated amorphous silicon. The highest postdeposition TFT process temperature was 280 °C. The low-temperature p channel μc-Si TFT and the integrated CMOS inverter represent building blocks of a digital circuit technology based on ultralow-temperature silicon. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology
81.05.Cy Elemental semiconductors

Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy

M. Kozhevnikov, V. Narayanamurti, A. Mascarenhas, Y. Zhang, J. M. Olson, and D. L. Smith

Appl. Phys. Lett. 75, 1128 (1999); http://dx.doi.org/10.1063/1.124618 (3 pages) | Cited 6 times

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We have analyzed the second voltage derivative (SD) of the ballistic electron emission microscopy (BEEM) spectra of GaInP2. We associate two peaks observed in the SD-BEEM spectra of disordered GaInP2 on n+ GaAs substrate with the Γ and L conduction minima, Δ(Γ−L) ∼ 0.35 eV. An additional third peak appearing in the SD-BEEM spectrum of ordered GaInP2 (η ∼ 0.5) is associated with the L-band splitting due to the ordering-induced “folding” of one of the four L valleys onto the math point. According to our results, this splitting is ∼ 0.13 eV. © 1999 American Institute of Physics.
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71.20.Nr Semiconductor compounds
68.37.Vj Field emission and field-ion microscopy
68.55.Nq Composition and phase identification
64.70.K- Solid-solid transitions

Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra

A. Sassella, A. Borghesi, P. Geranzani, and G. Borionetti

Appl. Phys. Lett. 75, 1131 (1999); http://dx.doi.org/10.1063/1.124619 (3 pages) | Cited 16 times

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A suitable choice of one sample among several silicon wafers subjected to two-step thermal treatments for oxygen precipitation permits to reveal a complete series of infrared absorption peaks related to the precipitates formed in the crystal. Structured spectra are observed at 7 K and can be interpreted as due to SiO2 precipitates with different shapes and concentrations. © 1999 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
64.75.-g Phase equilibria

Fabricating tunable semiconductor devices with an atomic force microscope

R. Held, S. Lüscher, T. Heinzel, K. Ensslin, and W. Wegscheider

Appl. Phys. Lett. 75, 1134 (1999); http://dx.doi.org/10.1063/1.124620 (3 pages) | Cited 5 times

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We fabricated quantum wires of different geometries in Ga[Al]As heterostructures by local oxidation of the semiconductor surface with an atomic force microscope. By magnetotransport measurements at low temperatures on these wires the electronic width is determined and compared to the geometrical width. An extremely small lateral depletion length of the order of 15 nm and a high specularity of the scattering at the confining walls is found. Furthermore, we demonstrate experimentally that these quantum wires can be tuned by a combination of in-plane gates and top gates. © 1999 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
07.79.Lh Atomic force microscopes
81.65.Mq Oxidation
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates

Kenji Funato, Shigeki Hashimoto, Katsunori Yanashima, Fumihiko Nakamura, and Masao Ikeda

Appl. Phys. Lett. 75, 1137 (1999); http://dx.doi.org/10.1063/1.124621 (3 pages) | Cited 21 times

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GaN layers were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition with various growth conditions. Some samples were grown with pressures higher than atmospheric. The residual strain in the epitaxial layer was estimated by measuring the lattice constants using x-ray diffraction. The optical quality was evaluated in terms of the threshold power density of stimulated emission. The residual strain perpendicular to C face, ϵzz, ranged from 0.058% to 0.125%. The strain ratio under biaxial stress (Δc/c)/(Δa/a), is estimated to be −0.46 from the relation between the lattice constants a and c. From the photoluminescence spectra with weak excitation, δEA/δϵzz for undoped GaN is estimated to be 16.4 eV. The threshold power density decreased from 2.77 to 0.59 MW/cm2 as the strain increased, suggesting that the strain relaxation process is accompanied by a generation of defects which act as nonradiative recombination centers. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.45.+h Stimulated emission
68.60.Bs Mechanical and acoustical properties
61.66.Fn Inorganic compounds
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Integrated micromechanical cantilever magnetometry of Ga1−xMnxAs

J. G. E. Harris, D. D. Awschalom, F. Matsukura, H. Ohno, K. D. Maranowski, and A. C. Gossard

Appl. Phys. Lett. 75, 1140 (1999); http://dx.doi.org/10.1063/1.124622 (3 pages) | Cited 33 times

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We have developed a technique for fabricating submicron GaAs micromechanical cantilevers into which lithographically patterned samples grown by molecular beam epitaxy or evaporative deposition are integrated. The torque sensitivity of the 100-nm-thick cantilevers makes them ideal for torsional magnetometry of nanometer-scale, anisotropic samples. We present measurements on samples of the ferromagnetic semiconductor Ga1−xMnxAs at temperatures from 350 mK to 65 K and in fields from 0 to 8 T. By measuring the shift in the resonant frequency of the cantilevers, we demonstrate a moment sensitivity of 3×106 μB at 0.1 T, an improvement of nearly five orders of magnitude upon existing torsional magnetometers. © 1999 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
07.10.Cm Micromechanical devices and systems
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials

Biased switching of small magnetic particles

R. L. Stamps and B. Hillebrands

Appl. Phys. Lett. 75, 1143 (1999); http://dx.doi.org/10.1063/1.124623 (3 pages) | Cited 24 times

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High-frequency switching of single domain, uniaxial magnetic particles is discussed in terms of transition rates controlled by a small transverse bias field. It is shown that fast switching times can be achieved using bias fields an order of magnitude smaller than the effective anisotropy field. Analytical expressions for the switching time are derived in special cases, and general configurations of practical interest are examined using numerical simulations. © 1999 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials

Effect of tolerance factor and local distortion on magnetic properties of the perovskite manganites

J. P. Zhou, J. T. McDevitt, J. S. Zhou, H. Q. Yin, J. B. Goodenough, Y. Gim, and Q. X. Jia

Appl. Phys. Lett. 75, 1146 (1999); http://dx.doi.org/10.1063/1.124624 (3 pages) | Cited 23 times

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The substitutions of rare earths for La on the magnetic properties of the perovskites La0.7−xRxA0.3MnO3 (0<x<0.7), R=Pr or Gd and A=Ca, Sr, or Ba have shown that small substitution of Pr slightly increases the coercive field Hc and magnetization M, and strongly improves the magnetoresistance (MR) while lowering Tc. On the other hand, the substitution of Gd lowers Hc, M and Tc, however, increases MR of the system La0.7−xGdxSr0.3MnO3 at temperature <Tc. Large differences in the A-site ionic radii rA of the AMnO3 perovskites proved detrimental. The optimal composition has been discussed for the half-metallic ferromagnet of a spin-switch device based on the manganese oxides. © 1999 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Spin-polarized quasiparticle tunnel injection in a YBa2Cu3Oy/Au/Co junction

Kiejin Lee, Wan Wang, Ienari Iguchi, Barry Friedman, Takayuki Ishibashi, and Katsuaki Sato

Appl. Phys. Lett. 75, 1149 (1999); http://dx.doi.org/10.1063/1.124625 (3 pages) | Cited 22 times

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We report the strong suppression of YBa2Cu3Oy (YBCO) supercurrent by injection of spin-polarized quasiparticles (QP) using a cobalt ferromagnetic injector. The injection of spin-polarized QP generates a substantially larger nonequilibrium population as compared with that of an unpolarized injection current. The observed current gain depends on the thickness of Au interlayer (dAu) and is directly related to the nonequilibrium magnetization due to spin relaxation effects. For dAu = 15 nm, the tunnel characteristic a YBCO/Au/Co junction exhibited a zero bias conductance peak, which may be interpreted by spin scattering processes at a ferromagnetic/d-wave superconductor junction. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects
75.50.Cc Other ferromagnetic metals and alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
74.72.-h Cuprate superconductors
74.25.Ha Magnetic properties including vortex structures and related phenomena

Potentiometric imaging of (La0.7Sr0.3)MnO3 thin films

J. J. Versluijs, F. Ott, and J. M. D. Coey

Appl. Phys. Lett. 75, 1152 (1999); http://dx.doi.org/10.1063/1.124626 (3 pages) | Cited 8 times

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Scanning tunneling potentiometry has been used to simultaneously image the surface topography and map the potential distribution on films of (La0.7Sr0.3)MnO3 deposited on polycrystalline and single crystal MgO substrates. Potential steps in the polycrystalline films coincide with the crystallite boundaries in the film. The grain boundary resistivity varies in the range 3×10−7–3×10−5 Ω cm2, with a typical value of 6×10−6 Ω cm2. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
75.50.Dd Nonmetallic ferromagnetic materials
61.72.Mm Grain and twin boundaries
73.25.+i Surface conductivity and carrier phenomena
68.55.-a Thin film structure and morphology
68.35.Md Surface thermodynamics, surface energies
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Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

S. D. Bu, B. H. Park, B. S. Kang, S. H. Kang, T. W. Noh, and W. Jo

Appl. Phys. Lett. 75, 1155 (1999); http://dx.doi.org/10.1063/1.124627 (3 pages) | Cited 15 times

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Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0–1.5 J/cm2, films with large remnant polarizations (as high as 18.7 μC/cm2) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. © 1999 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization

Switching properties of self-assembled ferroelectric memory cells

M. Alexe, A. Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, and J. F. Scott

Appl. Phys. Lett. 75, 1158 (1999); http://dx.doi.org/10.1063/1.124628 (3 pages) | Cited 50 times

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In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode. © 1999 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.30.Sk Pulse and digital circuits
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena

Soft breakdown of gate oxides in metal–SiO2–Si capacitors under stress with hot electrons

S. Lombardo, A. La Magna, C. Gerardi, M. Alessandri, and F. Crupi

Appl. Phys. Lett. 75, 1161 (1999); http://dx.doi.org/10.1063/1.124629 (3 pages) | Cited 7 times

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We have investigated the intrinsic dielectric breakdown of gate oxide layers with thickness of 12 and 7 nm in n+ polycrystalline Si–SiO2–Si metal/oxide/semiconductor (MOS) capacitors after stress with constant current either under Fowler-Nordheim or under hot electron injection. Occurrence of soft breakdown without thermal damage in the MOS structure is demonstrated even in a 12 nm oxide under particular stress conditions. In general, it is found that the type of stress determines the breakdown mode (soft or hard). © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
77.22.Jp Dielectric breakdown and space-charge effects

Dielectric properties of RbTiOAsO4 single crystals

Yusin Yang and Choon Sup Yoon

Appl. Phys. Lett. 75, 1164 (1999); http://dx.doi.org/10.1063/1.124630 (3 pages) | Cited 7 times

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Using the impedance analysis, we obtain the dielectric constants of RbTiOAsO4 (RTA) single crystals for the three principle crystallographic axes in the frequency range of 1 kHz–6 MHz and in the temperature range of 303–1123 K. The conductivity of RTA along the polar c axis is five orders-of-magnitude smaller than that of KTiOPO4 (KTP) in the temperature range of 500–970 K. The conductivities of RTA along the three principle axes have the same order of magnitude, 10−5 Ω−1 m−1 at 720 K, which is contrasted with the high anisotropy shown in KTP. © 1999 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
42.70.Mp Nonlinear optical crystals
72.20.Ee Mobility edges; hopping transport
72.80.Sk Insulators
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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, C. K. Hyon, J. H. Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Yong Kim, and E. K. Kim

Appl. Phys. Lett. 75, 1167 (1999); http://dx.doi.org/10.1063/1.124631 (3 pages) | Cited 14 times

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Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm have been deposited on an InAs self-assembled quantum-dot wafer to form the quantum-dot devices. The current–voltage characteristics measured from the devices, in which a single quantum dot is placed in between the electrodes, exhibit negative differential resistance effects at the temperature above 77 K. They are interpreted as due to three-dimensional–zero-dimensional resonant tunneling through the InAs self-assembled quantum dot. © 1999 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.23.Hk Coulomb blockade; single-electron tunneling
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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Chemomagnetic fields produced by solid combustion reactions

M. D. Nersesyan, J. R. Claycomb, Q. Ming, J. H. Miller, J. T. Richardson, and Dan Luss

Appl. Phys. Lett. 75, 1170 (1999); http://dx.doi.org/10.1063/1.124632 (3 pages) | Cited 15 times

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We report here the observation of chemomagnetism, generation of a magnetic field by rapid high-temperature solid reactions producing various oxides. The low-level transient magnetic fields were measured with a high-Tc superconducting quantum interference device magnetometer during the synthesis of both nonferromagnetic and ferromagnetic (ferrite) compounds. The magnetic field was most likely produced by chemoionization processes generated by the moving high-temperature reaction zone. The permanent magnetic field formed by the synthesis of ferromagnetic materials depended on the difference between the combustion temperature and the Curie temperature of the product. © 1999 American Institute of Physics.
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82.33.Vx Reactions in flames, combustion, and explosions
07.55.Db Generation of magnetic fields; magnets
75.90.+w Other topics in magnetic properties and materials (restricted to new topics in section 75)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

High-density InAs nanowires realized in situ on (100) InP

Hanxuan Li, Ju Wu, Zhanguo Wang, and Theda Daniels-Race

Appl. Phys. Lett. 75, 1173 (1999); http://dx.doi.org/10.1063/1.124633 (3 pages) | Cited 35 times

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High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5×10 nm2. The linear density is as high as 70 wires/μm. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors

Thermoelectromechanical refrigeration based on transient thermoelectric effects

A. Miner, A. Majumdar, and U. Ghoshal

Appl. Phys. Lett. 75, 1176 (1999); http://dx.doi.org/10.1063/1.124634 (3 pages) | Cited 20 times

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This letter introduces the concept of a thermoelectromechanical cooler (TEMC), which modifies a traditional thermoelectric cooler (TEC) by using intermittent contact of a mechanical element synchronized with an applied pulsed current. Using Bi2Te3 as the thermoelectric material, it is predicted that the maximum temperature drop across a TEMC operated under zero applied heat flux is about 35% higher than that of a TEC. This effectively increases the thermoelectric figure of merit for maximum temperature differential applications by a factor of 1.8. © 1999 American Institute of Physics.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
72.20.Pa Thermoelectric and thermomagnetic effects

Effects of O2, H2, and N2 gases on the field emission properties of diamond-coated microtips

S. C. Lim, R. E. Stallcup, I. A. Akwani, and J. M. Perez

Appl. Phys. Lett. 75, 1179 (1999); http://dx.doi.org/10.1063/1.124636 (3 pages) | Cited 10 times

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We report the effects of O2, H2, and N2 residual gases on the field emission properties of uncoated and diamond-coated individual Mo microtips. The microtips are made using electrochemical etching techniques and positioned 5 μm from the anode using a scanning tunneling microscopy system. We observe that the field emission (FE) current and turn-on voltage of diamond-coated microtips are significantly less degraded by O2 exposure than those of uncoated Mo microtips. H2 exposure enhances the FE properties of both uncoated and diamond-coated microtips, while N2 exposure does not have any significant effect. © 1999 American Institute of Physics.
Show PACS
85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
07.79.Cz Scanning tunneling microscopes
81.65.Cf Surface cleaning, etching, patterning
81.05.Bx Metals, semimetals, and alloys
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