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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, C. K. Hyon, J. H. Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Yong Kim, and E. K. Kim

Appl. Phys. Lett. 75, 1167 (1999); http://dx.doi.org/10.1063/1.124631 (3 pages) | Cited 14 times

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Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm have been deposited on an InAs self-assembled quantum-dot wafer to form the quantum-dot devices. The current–voltage characteristics measured from the devices, in which a single quantum dot is placed in between the electrodes, exhibit negative differential resistance effects at the temperature above 77 K. They are interpreted as due to three-dimensional–zero-dimensional resonant tunneling through the InAs self-assembled quantum dot. © 1999 American Institute of Physics.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.23.Hk Coulomb blockade; single-electron tunneling
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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