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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

S. D. Bu, B. H. Park, B. S. Kang, S. H. Kang, T. W. Noh, and W. Jo

Appl. Phys. Lett. 75, 1155 (1999); http://dx.doi.org/10.1063/1.124627 (3 pages) | Cited 15 times

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Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0–1.5 J/cm2, films with large remnant polarizations (as high as 18.7 μC/cm2) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. © 1999 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization

Switching properties of self-assembled ferroelectric memory cells

M. Alexe, A. Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, and J. F. Scott

Appl. Phys. Lett. 75, 1158 (1999); http://dx.doi.org/10.1063/1.124628 (3 pages) | Cited 50 times

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In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode. © 1999 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.30.Sk Pulse and digital circuits
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena

Soft breakdown of gate oxides in metal–SiO2–Si capacitors under stress with hot electrons

S. Lombardo, A. La Magna, C. Gerardi, M. Alessandri, and F. Crupi

Appl. Phys. Lett. 75, 1161 (1999); http://dx.doi.org/10.1063/1.124629 (3 pages) | Cited 7 times

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We have investigated the intrinsic dielectric breakdown of gate oxide layers with thickness of 12 and 7 nm in n+ polycrystalline Si–SiO2–Si metal/oxide/semiconductor (MOS) capacitors after stress with constant current either under Fowler-Nordheim or under hot electron injection. Occurrence of soft breakdown without thermal damage in the MOS structure is demonstrated even in a 12 nm oxide under particular stress conditions. In general, it is found that the type of stress determines the breakdown mode (soft or hard). © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
77.22.Jp Dielectric breakdown and space-charge effects

Dielectric properties of RbTiOAsO4 single crystals

Yusin Yang and Choon Sup Yoon

Appl. Phys. Lett. 75, 1164 (1999); http://dx.doi.org/10.1063/1.124630 (3 pages) | Cited 7 times

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Using the impedance analysis, we obtain the dielectric constants of RbTiOAsO4 (RTA) single crystals for the three principle crystallographic axes in the frequency range of 1 kHz–6 MHz and in the temperature range of 303–1123 K. The conductivity of RTA along the polar c axis is five orders-of-magnitude smaller than that of KTiOPO4 (KTP) in the temperature range of 500–970 K. The conductivities of RTA along the three principle axes have the same order of magnitude, 10−5 Ω−1 m−1 at 720 K, which is contrasted with the high anisotropy shown in KTP. © 1999 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
42.70.Mp Nonlinear optical crystals
72.20.Ee Mobility edges; hopping transport
72.80.Sk Insulators
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