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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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On the long pulse operation of an x-ray preionized, gas discharge pumped ArF excimer laser

L. Feenstra, H. M. J. Bastiaens, P. J. M. Peters, and W. J. Witteman

Appl. Phys. Lett. 75, 1033 (1999); http://dx.doi.org/10.1063/1.124587 (3 pages) | Cited 1 time

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Long laser pulses of up to 120 ns full width at half maximum have been achieved in a discharge pumped ArF laser, using x-ray preionization and prepulse-mainpulse excitation using a magnetic switch. For the realization of these long pulse lengths a fast current rise time in the first stage of the discharge is a crucial factor. The laser performance depends strongly on the discharge stability, and thus on the partial pressure of the fluorine in the laser gas mixture. © 1999 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals

M. Boroditsky, T. F. Krauss, R. Coccioli, R. Vrijen, R. Bhat, and E. Yablonovitch

Appl. Phys. Lett. 75, 1036 (1999); http://dx.doi.org/10.1063/1.124588 (3 pages) | Cited 147 times

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We describe a promising thin-slab light-emitting diode (LED) design, which uses a highly efficient coherent external scattering of trapped light by a two-dimensional (2D) photonic crystal. The light generation region was an unpatterned heterostructure surrounded by the light extraction region, a thin film patterned as a 2D photonic crystal. A six-fold photoluminescence enhancement was observed compared to an unpatterned thin film LED. That corresponded to 70% external quantum efficiency. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Imaging local index variations in an optical waveguide using a tapping-mode near-field scanning optical microscope

Din Ping Tsai, Chi Wen Yang, Shu-Zee Lo, and Howard E. Jackson

Appl. Phys. Lett. 75, 1039 (1999); http://dx.doi.org/10.1063/1.124589 (3 pages) | Cited 10 times

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Imaging local index variations by using a form of modulated near-field scanning optical microscopy is suggested. To test these ideas, we have probed two different optical structures, one a well-characterized BK-7 glass prism in the total internal reflection configuration, and the other a side-polished optical fiber waveguide with a step index of refraction of 4.5×10−3. Using a recently developed tapping-mode tuning-fork near-field scanning optical microscope, we have obtained images showing distinct local index variations. This method may have applicability to the characterization of a wide variety of optical waveguide structures. © 1999 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.65.Wi Nonlinear waveguides

Accumulation of positive charges in organic light-emitting diodes with a double-layer structure

Michio Matsumura, Atsushi Ito, and Yuichiro Miyamae

Appl. Phys. Lett. 75, 1042 (1999); http://dx.doi.org/10.1063/1.124590 (3 pages) | Cited 40 times

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The current–voltage properties of organic light-emitting diodes were analyzed based on the assumptions that: (1) they are determined by the carrier injection processes, and (2) the charges are accumulated near the organic/organic interface. From the results, the amount of accumulated charges was estimated. The amount was also determined from the analyses of transient currents observed by applying pulsed voltage to the devices. By deconvoluting the current components, the discharge of accumulated charges from the bulk of the organic layers was evaluated. The amounts determined by these two methods showed good agreement. All the results indicated that positive charges are accumulated near the organic/organic interface and that the amount increases as the electron injection ability of the cathode is lowered. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

GaAs/AlGaAs-based microcylinder lasers emitting at 10 μm

S. Gianordoli, L. Hvozdara, G. Strasser, W. Schrenk, K. Unterrainer, and E. Gornik

Appl. Phys. Lett. 75, 1045 (1999); http://dx.doi.org/10.1063/1.124591 (3 pages) | Cited 24 times

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The realization of electrically pumped GaAs/AlGaAs quantum cascade microcylinder lasers is reported. Design and fabrication of special resonator shapes (microcylinder and ridge waveguide) are presented. Threshold characteristics and optical output of different resonators of the same quantum cascade laser material emitting at 10 μm are investigated. A low threshold current of 318 mA is obtained for a microcylinder resonator with circular cross section. The maximum working temperature of the microcylinder lasers is 165 K. Single mode emission is detected with a side mode suppression ratio better than 20 dB. © 1999 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical method for two-dimensional ultrasonic detection

G. Paltauf, H. Schmidt-Kloiber, K. P. Köstli, and M. Frenz

Appl. Phys. Lett. 75, 1048 (1999); http://dx.doi.org/10.1063/1.124592 (3 pages) | Cited 25 times

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Two-dimensional detection of ultrasonic waves is based on pressure-induced changes of optical reflectance at a glass–liquid interface, imaged with a time-gated video camera. The method is used to record optoacoustic waves generated after irradiation of optically absorbing targets with 6 ns long laser pulses. Measurements of absolute pressure values with high temporal and spatial resolution (in the range of 10 ns and 10 μm, respectively) is demonstrated. The sensitivity is varied between 0.19% and 0.81% gray level modulation per bar. The detector plane is optically transparent, making it possible to irradiate the sample through the detector without disturbing the acoustic measurement. Two-dimensional recording of ultrasonic waves is ideally suited for the analysis of acoustic emission from small sources and for optoacoustic imaging of optical absorption differences in an opaque material. © 1999 American Institute of Physics.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.80.Ev Acoustical measurement methods in biological systems and media
87.50.Y- Biological effects of acoustic and ultrasonic energy
07.60.Hv Refractometers and reflectometers

Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes

N. Y. Li, C. P. Hains, K. Yang, J. Lu, J. Cheng, and P. W. Li

Appl. Phys. Lett. 75, 1051 (1999); http://dx.doi.org/10.1063/1.124593 (3 pages) | Cited 13 times

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We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17–1.20 μm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm2 has been successfully demonstrated. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Patterning of (Pb, La)(Zr, Ti)O3 waveguides for fabricating micro-optics using wet etching and solid-phase epitaxy

K. Nashimoto, K. Haga, M. Watanabe, S. Nakamura, and E. Osakabe

Appl. Phys. Lett. 75, 1054 (1999); http://dx.doi.org/10.1063/1.124594 (3 pages) | Cited 13 times

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The patterning process of (Pb, La)(Zr, Ti)O3 heterostructure waveguides was examined for fabricating micro-optics, including channels and lenses. After the patterning of the amorphous thin films derived from spin-cast methoxyethoxide precursors by a wet etching, the patterned amorphous film was crystallized by solid-phase epitaxy. A 5-μm-wide ridge-type channel waveguide was fabricated in a Pb0.91La0.09(Zr0.65Ti0.35)O3/Pb(Zr0.52Ti0.48)O3 heterostructure on a SrTiO3 (100) substrate by the process. The optical confinement was successfully observed. A mode index lens was also fabricated in the Pb0.91La0.09(Zr0.65Ti0.35)O3/Pb(Zr0.30Ti0.70)O3 heterostructure on the SrTiO3 (100) substrate. A deflection of the collimated light by the lens was observed. © 1999 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
81.65.Cf Surface cleaning, etching, patterning
81.15.Np Solid phase epitaxy; growth from solid phases
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Photonic band-gap effects upon the light emission from a dye–polymer–opal composite

S. G. Romanov, T. Maka, C. M. Sotomayor Torres, M. Müller, and R. Zentel

Appl. Phys. Lett. 75, 1057 (1999); http://dx.doi.org/10.1063/1.124595 (3 pages) | Cited 33 times

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A polymeric photonic crystal formed by impregnating an opal with a Coumarin 6 dye containing polymer has been prepared and its emission properties studied by angular-resolved photoluminescence. A strong spectral redistribution of the luminescence intensity was observed in the dye-polymer-opal compared to that of the dye-polymer reference sample. The emission spectrum shows a marked distortion compared with the reference sample, which changes with the rotation of the crystal due to the angular dispersion of the stop band. Under increasing optical pumping power, a band of amplified spontaneous emission was observed at the stop-band edge. The angular dispersion of the stop band in the luminescence observed from the back surface exhibits in a strong directionality at the maximum of the dye emission band. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
78.55.-m Photoluminescence, properties and materials
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems

Broadband phase-matched difference frequency mixing of femtosecond pulses in GaSe: Experiment and theory

R. A. Kaindl, F. Eickemeyer, M. Woerner, and T. Elsaesser

Appl. Phys. Lett. 75, 1060 (1999); http://dx.doi.org/10.1063/1.124596 (3 pages) | Cited 46 times

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Phase-matched difference frequency mixing within the broad spectrum of single 13 fs pulses from a cavity-dumped, mode-locked Ti:sapphire laser in a GaSe crystal allows the generation of femtosecond mid-infrared pulses, continuously tunable in the wavelength range from 7 to 20 μm. Pulse durations down to 95 fs at 9.3 μm are directly measured. Model calculations including the full dispersion of GaSe show that the chirp of the pump pulses allows to change both the pulse duration and conversion efficiency obtained in the nonlinear process, in agreement with the experiment. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Light scattering from dipole and quadrupole nanoshell antennas

S. J. Oldenburg, G. D. Hale, J. B. Jackson, and N. J. Halas

Appl. Phys. Lett. 75, 1063 (1999); http://dx.doi.org/10.1063/1.124597 (3 pages) | Cited 91 times

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Metal nanoshells are nanoscale optical components that allow for the controllable redirection of electromagnetic radiation via careful engineering of their multilayer structures. By varying the core size and shell thickness of these nanoparticles, nanoscale “antennas” are constructed that can be selectively driven into a dipolar or quadrupolar oscillation pattern. With scattering cross sections many times larger than their physical cross section, these antennas efficiently couple to the incident electromagnetic wave. These structures can focus, redirect, or split the incident light with subwavelength precision, and may find useful applications in the remote coupling of electromagnetic signals into nanoscale machines or devices. © 1999 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
81.07.-b Nanoscale materials and structures: fabrication and characterization
84.40.Ba Antennas: theory, components and accessories
78.66.Bz Metals and metallic alloys
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings
61.46.-w Structure of nanoscale materials
42.25.Fx Diffraction and scattering

Noise in slow saturable absorber mode-locked semiconductor lasers

J. L. A. Dubbeldam and D. Lenstra

Appl. Phys. Lett. 75, 1066 (1999); http://dx.doi.org/10.1063/1.124598 (3 pages) | Cited 1 time

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A theoretical investigation of the influence of noise in a passively mode-locked semiconductor laser with a slow saturable absorber is presented. Difference equations for the pulse energy and jitter are derived. We find that noise leads to increased pulse durations and considerable jitter. The influence of noise, for systems with and without self-phase modulation and group velocity dispersion, on the pulse energy and stability regions is discussed. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
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