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23 Aug 1999

Volume 75, Issue 8, pp. 1033-1181

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Recalescence after solidification in Ge films melted by picosecond laser pulses

J. Siegel, J. Solis, and C. N. Afonso

Appl. Phys. Lett. 75, 1071 (1999); http://dx.doi.org/10.1063/1.124600 (3 pages) | Cited 19 times

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Thin amorphous Ge films on glass substrates are irradiated by single picosecond (ps) laser pulses and the induced melting and solidification process is followed by means of real-time reflectivity measurements with ps resolution using a setup based on a streak camera. Due to the excellent time resolution achieved in single exposure, the recalescence process occurring upon solidification can be completely resolved by means of an all-optical technique. The results are consistent with the bulk nucleation of the amorphous phase in the supercooled liquid at an extremely large nucleation rate. The massive release of solidification heat causes the reheating and partial remelting of the film after its complete solidification. The occurrence of recalescence after solidification is responsible for the formation of the crystalline phase finally obtained. © 1999 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.D- Solid-liquid transitions
42.62.-b Laser applications
78.66.Jg Amorphous semiconductors; glasses
78.47.-p Spectroscopy of solid state dynamics
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators

Room temperature manipulation of the heterofullerene C59N on Si(100)-2×1

M. J. Butcher, F. H. Jones, P. Moriarty, P. H. Beton, K. Prassides, K. Kordatos, and N. Tagmatarchis

Appl. Phys. Lett. 75, 1074 (1999); http://dx.doi.org/10.1063/1.124601 (3 pages) | Cited 15 times

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The absorption of the heterofullerene C59N on the Si(100)-2×1 surface has been investigated using scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. The molecules are adsorbed in monomer form in the troughs between silicon dimer rows. It is possible to use the tip of the STM to manipulate the molecules parallel and perpendicular to the dimer rows in a controlled fashion at room temperature. To determine the stability of the C59N monomer we have examined the response of pairs of molecules to STM manipulation and found that the Si(100)-2×1 surface inhibits conversion to (C59N)2 dimers. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Scratching resistance of diamond-like carbon coatings in the subnanometer regime

A. Wienss, G. Persch-Schuy, M. Vogelgesang, and U. Hartmann

Appl. Phys. Lett. 75, 1077 (1999); http://dx.doi.org/10.1063/1.124602 (3 pages) | Cited 13 times

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In order to examine the scratching resistance of ultrathin hydrogenated amorphous carbon (a-C:H) coatings used in magnetic storage devices, a large number of scratches with reproducible residual groove depths well below 1 nm has been examined. All measurements were carried out with an atomic force microscope and diamond-tipped cantilevers. The analysis of such shallow scratches is made possible by means of an image processing procedure which minimizes surface roughness effects using subtraction imaging. This method was applied to a series of sputter-deposited, fully aged, unlubricated amorphous coatings with different hydrogenations. For low hydrogen content in the sputtering gas, the scratching resistance decreased with an increasing amount of hydrogen, in accordance with many other experiments. In contrast, an unusual slight improvement of the scratching resistance for a further increase of hydrogenation was obtained. © 1999 American Institute of Physics.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
75.50.Ss Magnetic recording materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Surface sensitivity effects with local probe scanning Auger–scanning electron microscopy

D. T. L. van Agterveld, G. Palasantzas, and J. Th. M. De Hosson

Appl. Phys. Lett. 75, 1080 (1999); http://dx.doi.org/10.1063/1.124603 (3 pages) | Cited 4 times

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This letter concentrates on a quantitative description of surface roughness effects on Auger peak-line profiles for pure and alloyed specimens. The nanometer lateral electron probe size of the order of 10 nm yielded peak-line profiles that capture surface topology variations down to nanometer-length scales. Surface roughness leads to peak-intensity fluctuations, which are described within the weak roughness limit by a simple form, I(r) ≈ Iav[1+βh(r)]. Iav is the average peak intensity, h(r) represents the roughness fluctuation along a lateral in-planar distance r, and β is a constant (<1). In addition, analyses of the peak-difference correlation function Iz(r) = 〈∣I(r)−I(0)∣2〉1/2 showed a power-law behavior Iz(r)∝rα with α ranging between 0.7 and 1 at small-length scales, i.e., for r≪ξ, with ξ a peak correlation length that was comparable to average specimen cluster sizes. © 1999 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Fv Electron impact: Auger emission
07.81.+a Electron and ion spectrometers

Boron pileup and clustering in silicon-on-insulator films

H.-H. Vuong, H.-J. Gossmann, L. Pelaz, G. K. Celler, D. C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V. C. Venezia, C. S. Rafferty, S. J. Hillenius, J. McKinley, F. A. Stevie, and C. Granger

Appl. Phys. Lett. 75, 1083 (1999); http://dx.doi.org/10.1063/1.124604 (3 pages) | Cited 13 times

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The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting (a) boron pileup at both upper and lower interfaces of the Si film, and (b) no reduction of the boron clustering in SOI compared with bulk silicon. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals
64.75.-g Phase equilibria
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.J- Point defects and defect clusters

Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot

Z. F. Ren, Z. P. Huang, D. Z. Wang, J. G. Wen, J. W. Xu, J. H. Wang, L. E. Calvet, J. Chen, J. F. Klemic, and M. A. Reed

Appl. Phys. Lett. 75, 1086 (1999); http://dx.doi.org/10.1063/1.124605 (3 pages) | Cited 170 times

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Patterned growth of freestanding carbon nanotube(s) on submicron nickel dot(s) on silicon has been achieved by plasma-enhanced-hot-filament-chemical-vapor deposition (PE-HF-CVD). A thin film nickel grid was fabricated on a silicon wafer by standard microlithographic techniques, and the PE-HF-CVD was done using acetylene (C2H2) gas as the carbon source and ammonia (NH3) as a catalyst and dilution gas. Well separated, single carbon nanotubes were observed to grow on the grid. The structures had rounded base diameters of approximately 150 nm, heights ranging from 0.1 to 5 μm, and sharp pointed tips. Transmission electron microscopy cross-sectional image clearly showed that the structures are indeed hollow nanotubes. The diameter and height depend on the nickel dot size and growth time, respectively. This nanotube growth process is compatible with silicon integrated circuit processing. Using this method, devices requiring freestanding vertical carbon nanotube(s) such as scanning probe microscopy, field emission flat panel displays, etc. can be fabricated without difficulty. © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.48.-c Structure of fullerenes and related hollow and planar molecular structures

Large supercooled liquid region and phase separation in the Zr–Ti–Ni–Cu–Be bulk metallic glasses

C. C. Hays, C. P. Kim, and W. L. Johnson

Appl. Phys. Lett. 75, 1089 (1999); http://dx.doi.org/10.1063/1.124606 (3 pages) | Cited 46 times

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Results of calorimetric, differential thermal analysis, and structural measurements are presented for a series of bulk metallic glass forming compositions in the Zr–Ti–Cu–Ni–Be alloy system. The calorimetric data for five alloys, prepared along the tie line between phase separating and nonphase separating compositions, show that the transition from phase separating to nonphase separating behavior is smooth. The bulk glasses near the center of the tie line exhibit large supercooled liquid regions: ΔT ≈ 135 K, the largest known for a bulk metallic glass. © 1999 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses
64.75.-g Phase equilibria
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
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