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6 Mar 2000

Volume 76, Issue 10, pp. 1219-1345

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Temperature dependence of dislocation photoresponse in relaxed GeSi films

Matthew H. Gray and J. W. P. Hsu

Appl. Phys. Lett. 76, 1294 (2000); http://dx.doi.org/10.1063/1.126013 (3 pages) | Cited 4 times

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Using a near-field scanning optical microscope to perform local photocurrent measurements, we examine the temperature dependence of contrast associated with individual threading dislocations and crosshatch patterns from 12 to 300 K. The observed weak contrast at room temperature and a negative temperature coefficient indicate that the predominant electrical activity comes from shallow centers. This is consistent with intrinsic defects or at most low levels ( ∼ ppb) of contaminants. In addition, the crosshatch contrast displays a long-range variation below 100 K. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Ht Other nonmetals

Potential profile between boron-doped diamond electron emitter and anode electrode

Takatoshi Yamada, Atsuhito Sawabe, Satoshi Koizumi, Junji Itoh, and Ken Okano

Appl. Phys. Lett. 76, 1297 (2000); http://dx.doi.org/10.1063/1.126014 (3 pages) | Cited 13 times

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The voltage drop of vacuum and boron (B)-doped diamond electron emitter bulk has been discussed in order to understand the electron emission mechanism of B-doped diamond. It is confirmed that the electron emission from B-doped diamond depends on its film thickness and the localized electron pass/channel is formed in the film. From the results of the threshold voltage versus anode-diamond spacing characteristics, it is found that most of the anode voltage is applied in vacuum, and the high electric field near the B-doped diamond surface is required for the electron emission from B-doped diamond regardless of the film thickness. © 2000 American Institute of Physics.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Cw Elemental semiconductors

Fabrication of n-type 4H–SiC/Ni junctions using electrochemical deposition

G. Oskam, P. C. Searson, and M. W. Cole

Appl. Phys. Lett. 76, 1300 (2000); http://dx.doi.org/10.1063/1.126015 (3 pages) | Cited 5 times

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We report on the electrochemical deposition of nickel films on n-type 4H–SiC. High quality nickel films were prepared by a double potential pulse method. The as-deposited n-SiC/Ni junctions were rectifying with a barrier height of about 1.8 eV. The contact was converted to an ohmic junction by annealing at 950 °C in a 10% H2/N2 atmosphere. © 2000 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Pq Electrodeposition, electroplating
61.72.Cc Kinetics of defect formation and annealing
73.20.-r Electron states at surfaces and interfaces
73.40.Ei Rectification

Ga Ohmic contact for n-type diamond by ion implantation

T. Teraji, S. Koizumi, and H. Kanda

Appl. Phys. Lett. 76, 1303 (2000); http://dx.doi.org/10.1063/1.126016 (3 pages) | Cited 5 times

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Electric contacts formed on an n-type diamond film by means of the Ga ion implantation were studied. The implanted Ga contacts revealed Ohmic property at room temperature. Contact resistivity for the implanted Ga contacts formed on the diamond film with donor density of 3×1018 cm−3 was 4.8×106 Ω cm2. The value is more than one order smaller than that for conventional vacuum-deposited metal contacts on the same diamond film. This contact has enabled us to measure electric properties for relatively lightly doped n-type diamond films in a temperature range between room temperature and 600 °C. © 2000 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
73.40.Cg Contact resistance, contact potential
61.82.Fk Semiconductors

Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

S. Marcinkevičius, C. Jagadish, H. H. Tan, M. Kaminska, K. Korona, R. Adomavičius, and A. Krotkus

Appl. Phys. Lett. 76, 1306 (2000); http://dx.doi.org/10.1063/1.126017 (3 pages) | Cited 12 times

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Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500–700 °C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
61.72.uj III-V and II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.Cc Kinetics of defect formation and annealing

Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Yongsheng Gui, Shaoling Guo, Guozhen Zheng, Junhao Chu, Xiaohua Fang, Kai Qiu, and Xingwu Wang

Appl. Phys. Lett. 76, 1309 (2000); http://dx.doi.org/10.1063/1.126018 (3 pages) | Cited 7 times

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Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov–de Haas measurements and the hybrid MS+MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
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Dynamic study and experimental “two-step process” of substrate step preparation for high-Tc Josephson junctions

H. Y. Zhai, L. Zhang, W. K. Chu, T. Morishita, S. Tanaka, F. Z. Xu, and Q. S. Yang

Appl. Phys. Lett. 76, 1312 (2000); http://dx.doi.org/10.1063/1.126019 (3 pages) | Cited 2 times

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We report theoretical and experimental studies of the dynamics of substrate step preparation for high-Tc Josephson junctions. A maximum step edge angle of 70.8° has been calculated for SrTiO3 (STO) substrates with a Nb mask. This calculated angle agrees well with our experimental result of 66°. Step-edge angles can be predicted for different purposes using this method. We also utilized a “two-step process” to improve the surface morphology of the stepped substrate, and step-edge Josephson junctions were fabricated with good uniformity. © 2000 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects

Magnetic electrodes for spin-polarized injection into InAs

G. Meier and T. Matsuyama

Appl. Phys. Lett. 76, 1315 (2000); http://dx.doi.org/10.1063/1.126020 (3 pages) | Cited 14 times

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Tailored magnetic electrodes are an important prerequisite to inject and detect charge carriers into a semiconductor with defined spins. Especially, if a gate electrode is used to tune the polarization of the carriers by the Rashba effect, magnetic electrodes providing simultaneously a high degree of polarization and a low stray field are important. We have simulated magnetization and hysteresis curves of permalloy electrode configurations and verified our theoretical results by magnetic-force microscopy for electrodes prepared on p-type InAs single crystals. This semiconductor exhibits a strong, gate-voltage dependent Rashba effect and therefore is a candidate for the realization of the spin transistor. © 2000 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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Effect of RuO2 growth temperature on ferroelectric properties of RuO2/Pb(Zr, Ti)O3/RuO2/Pt capacitors

G. J. Norga, Laura Fè, D. J. Wouters, and H. E. Maes

Appl. Phys. Lett. 76, 1318 (2000); http://dx.doi.org/10.1063/1.126021 (3 pages) | Cited 15 times

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We present a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol–gel method. As the substrate temperature during reactive sputtering of the RuO2 bottom electrode layer is reduced, the (111) PZT texture component becomes more pronounced, an effect attributed to the change from columnar to granular RuO2 film morphology. Reducing the residual PZT (100) and (101) texture components was found to be a necessary condition for obtaining optimal pulse switching and endurance properties of the layers. Highly (111)-oriented PZT layers, obtained on RuO2 grown at 150 °C exhibit a net switched charge of >60 μC/cm2 during pulse measurement and <10% degradation after 1011 fatigue cycles. © 2000 American Institute of Physics.
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81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Scanning force microscopy study of the ferroelectric phase transition in triglycine sulfate

X. K. Orlik, V. Likodimos, L. Pardi, M. Labardi, and M. Allegrini

Appl. Phys. Lett. 76, 1321 (2000); http://dx.doi.org/10.1063/1.126022 (3 pages) | Cited 11 times

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Voltage-modulated scanning force microscopy is applied to study the temperature dependence of the ferroelectric domain structure of triglycine sulfate up to TC, the ferroelectric transition temperature. The polarization image contrast exhibits a power-law decrease as TC is approached, associated with the competition between Maxwell stress and the converse piezoelectric effect. Substantial differences in the static and dynamic domain patterns are detected for two samples of different aging conditions. © 2000 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.80.B- Phase transitions and Curie point
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Field effect transistors with SrTiO3 gate dielectric on Si

K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard

Appl. Phys. Lett. 76, 1324 (2000); http://dx.doi.org/10.1063/1.126023 (3 pages) | Cited 149 times

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SrTiO3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO2. This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the SrTiO3 and the Si is 6.4×1010 states/cm2 eV and the inversion layer mobility is 221 and 62 cm2/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar SiO2 gate dielectric field effect transistor. © 2000 American Institute of Physics.  
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85.30.Tv Field effect devices

Pressure-induced crossover from long-to-short-range order in [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095 single crystal

G. A. Samara, E. L. Venturini, and V. Hugo Schmidt

Appl. Phys. Lett. 76, 1327 (2000); http://dx.doi.org/10.1063/1.126024 (3 pages) | Cited 33 times

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A pressure-induced crossover from normal ferroelectric–to–relaxor behavior has been observed in single crystal [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095, or PZN-9.5% PT. Analogy with similar observations for other perovskites indicates that this crossover is a general feature of compositionally disordered soft mode ferroelectrics. The pressure-temperature phase diagram has been also determined. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
62.50.-p High-pressure effects in solids and liquids
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions
77.80.Dj Domain structure; hysteresis

Relaxor behavior in BaTiO3

M. Mahesh Kumar, K. Srinivas, and S. V. Suryanarayana

Appl. Phys. Lett. 76, 1330 (2000); http://dx.doi.org/10.1063/1.125898 (3 pages) | Cited 17 times

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BaTiO3 shows relaxation effects when minute concentrations of Bi+3 and Fe+3 are added in varying molar ratios. Addition of Bi+3 at the A site reduces the transition maximum (Tm), whereas Fe+3 addition at the B site reduces the value of dielectric constant. Doping of Bi+3 and Fe+3 in equimolar ratios shows a positive shift in relaxation, while excess addition of either of the dopants produces a negative shift in the transition maximum with increasing frequency. Relaxation effects follow the Vogel–Fulcher law for spin glasses. The dielectric loss also shows relaxation effects. © 2000 American Institute of Physics.
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77.80.B- Phase transitions and Curie point
77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
75.50.Lk Spin glasses and other random magnets
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Molecular detection based on conductance quantization of nanowires

C. Z. Li, H. X. He, A. Bogozi, J. S. Bunch, and N. J. Tao

Appl. Phys. Lett. 76, 1333 (2000); http://dx.doi.org/10.1063/1.126025 (3 pages) | Cited 75 times

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We have studied molecular adsorption onto stable metallic nanowires fabricated with an electrochemical method. Upon the adsorption, the quantized conductance decreases, typically, to a fractional value, which may be attributed to the scattering of the conduction electrons by the adsorbates. The further conductance change occurs when the nanowire is exposed to another molecule that has stronger adsorption strength. Because the quantized conductance is determined by a few atoms at the narrowest portion of each nanowire, adsorption of a molecule onto the portion is enough to change the conductance, which may be used for chemical sensors. © 2000 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.61.At Metal and metallic alloys
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
73.25.+i Surface conductivity and carrier phenomena
73.23.-b Electronic transport in mesoscopic systems
82.45.-h Electrochemistry and electrophoresis
72.15.Qm Scattering mechanisms and Kondo effect

Direct measurement of internal potential distribution in organic electroluminescent diodes during operation

Masahiro Hiramoto, Keiji Koyama, Ken-ichi Nakayama, and Masaaki Yokoyama

Appl. Phys. Lett. 76, 1336 (2000); http://dx.doi.org/10.1063/1.126026 (3 pages) | Cited 18 times

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Direct measurement of the internal potential distribution in an organic electroluminescent (EL) diode under operating conditions was carried out by inserting a third gold electrode in the bulk of the organic thin film to monitor the potential. This electrode was sandwiched between two driving metal electrodes. During the operation of the organic EL diode, consisting of hole transporting and emitter layers, the applied voltage was distributed mainly across the emitter layer. The present technique provides a useful method for elucidating the operating mechanism of various types of organic thin-film devices. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices

High anisotropic conductivity in organic insulator/semiconductor monolayer heterostructure

J. Collet, S. Lenfant, D. Vuillaume, O. Bouloussa, F. Rondelez, J. M. Gay, K. Kham, and C. Chevrot

Appl. Phys. Lett. 76, 1339 (2000); http://dx.doi.org/10.1063/1.126027 (3 pages) | Cited 17 times

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We demonstrate a highly anisotropic conductivity, with a 109 ratio, between the in-plane and perpendicular electrical transport in organic insulator/semiconductor heterostructures of monolayer thickness. These heterostructures are self-assembled monolayers made of alkyl chains and functionalized by various conjugated moieties at their ends. The high anisotropic conductivity is due to the close packing of the conjugated end groups. These structures might be the building blocks of molecular-scale devices. © 2000 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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Fine crystal lattice fringes observed using a transmission electron microscope with 1 MeV coherent electron waves

T. Kawasaki, T. Yoshida, T. Matsuda, N. Osakabe, A. Tonomura, I. Matsui, and K. Kitazawa

Appl. Phys. Lett. 76, 1342 (2000); http://dx.doi.org/10.1063/1.126028 (3 pages) | Cited 25 times

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A transmission electron microscope with a 1 MeV cold field-emission electron source has been developed for coherent and penetrating electron waves. We confirmed the coherence and overall stability of the microscope by observing Au(33math) lattice fringes. These fringes have a 0.498 Å spacing. © 2000 American Institute of Physics.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.66.Bi Elemental solids
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FREE

Erratum: “Analysis of asymmetric giant magnetoimpedance in field-annealed Co-based amorphous ribbon” [Appl. Phys. Lett. 75, 2114 (1999)]

Cheol Gi Kim, K. J. Jang, D. Y. Kim, and S. S. Yoon

Appl. Phys. Lett. 76, 1345 (2000); http://dx.doi.org/10.1063/1.125853 (1 page) | Cited 3 times

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Abstract Unavailable
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72.15.Gd Galvanomagnetic and other magnetotransport effects
75.47.Gk Colossal magnetoresistance
75.60.Nt Magnetic annealing and temperature-hysteresis effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments
75.30.Gw Magnetic anisotropy
75.60.Ch Domain walls and domain structure
75.30.Et Exchange and superexchange interactions
99.10.Cd Errata
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