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6 Mar 2000

Volume 76, Issue 10, pp. 1219-1345

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Effect of RuO2 growth temperature on ferroelectric properties of RuO2/Pb(Zr, Ti)O3/RuO2/Pt capacitors

G. J. Norga, Laura Fè, D. J. Wouters, and H. E. Maes

Appl. Phys. Lett. 76, 1318 (2000); http://dx.doi.org/10.1063/1.126021 (3 pages) | Cited 15 times

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We present a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol–gel method. As the substrate temperature during reactive sputtering of the RuO2 bottom electrode layer is reduced, the (111) PZT texture component becomes more pronounced, an effect attributed to the change from columnar to granular RuO2 film morphology. Reducing the residual PZT (100) and (101) texture components was found to be a necessary condition for obtaining optimal pulse switching and endurance properties of the layers. Highly (111)-oriented PZT layers, obtained on RuO2 grown at 150 °C exhibit a net switched charge of >60 μC/cm2 during pulse measurement and <10% degradation after 1011 fatigue cycles. © 2000 American Institute of Physics.
Show PACS
81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Scanning force microscopy study of the ferroelectric phase transition in triglycine sulfate

X. K. Orlik, V. Likodimos, L. Pardi, M. Labardi, and M. Allegrini

Appl. Phys. Lett. 76, 1321 (2000); http://dx.doi.org/10.1063/1.126022 (3 pages) | Cited 11 times

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Voltage-modulated scanning force microscopy is applied to study the temperature dependence of the ferroelectric domain structure of triglycine sulfate up to TC, the ferroelectric transition temperature. The polarization image contrast exhibits a power-law decrease as TC is approached, associated with the competition between Maxwell stress and the converse piezoelectric effect. Substantial differences in the static and dynamic domain patterns are detected for two samples of different aging conditions. © 2000 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.80.B- Phase transitions and Curie point
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Field effect transistors with SrTiO3 gate dielectric on Si

K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard

Appl. Phys. Lett. 76, 1324 (2000); http://dx.doi.org/10.1063/1.126023 (3 pages) | Cited 149 times

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SrTiO3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO2. This structure has been used to make capacitors and metal oxide semiconductor field effect transistors. The interface trap density between the SrTiO3 and the Si is 6.4×1010 states/cm2 eV and the inversion layer mobility is 221 and 62 cm2/V s for n- and p-channel devices, respectively. The gate leakage in these devices is two orders of magnitude smaller than a similar SiO2 gate dielectric field effect transistor. © 2000 American Institute of Physics.  
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85.30.Tv Field effect devices

Pressure-induced crossover from long-to-short-range order in [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095 single crystal

G. A. Samara, E. L. Venturini, and V. Hugo Schmidt

Appl. Phys. Lett. 76, 1327 (2000); http://dx.doi.org/10.1063/1.126024 (3 pages) | Cited 33 times

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A pressure-induced crossover from normal ferroelectric–to–relaxor behavior has been observed in single crystal [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095, or PZN-9.5% PT. Analogy with similar observations for other perovskites indicates that this crossover is a general feature of compositionally disordered soft mode ferroelectrics. The pressure-temperature phase diagram has been also determined. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
62.50.-p High-pressure effects in solids and liquids
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions
77.80.Dj Domain structure; hysteresis

Relaxor behavior in BaTiO3

M. Mahesh Kumar, K. Srinivas, and S. V. Suryanarayana

Appl. Phys. Lett. 76, 1330 (2000); http://dx.doi.org/10.1063/1.125898 (3 pages) | Cited 17 times

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BaTiO3 shows relaxation effects when minute concentrations of Bi+3 and Fe+3 are added in varying molar ratios. Addition of Bi+3 at the A site reduces the transition maximum (Tm), whereas Fe+3 addition at the B site reduces the value of dielectric constant. Doping of Bi+3 and Fe+3 in equimolar ratios shows a positive shift in relaxation, while excess addition of either of the dopants produces a negative shift in the transition maximum with increasing frequency. Relaxation effects follow the Vogel–Fulcher law for spin glasses. The dielectric loss also shows relaxation effects. © 2000 American Institute of Physics.
Show PACS
77.80.B- Phase transitions and Curie point
77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
75.50.Lk Spin glasses and other random magnets
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