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6 Mar 2000

Volume 76, Issue 10, pp. 1219-1345

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A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well

M. Wraback and H. Shen

Appl. Phys. Lett. 76, 1288 (2000); http://dx.doi.org/10.1063/1.126011 (3 pages) | Cited 8 times

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High contrast and femtosecond speed have been achieved in an optically addressed anisotropically strained multiple quantum well modulator by exploiting polarization-sensitive optical nonlinearities associated with the interaction of resonantly excited excitons with a population of nonresonantly created excitons that adiabatically follows the temporal intensity profile of the excitation pulse. The resultant modulation is characterized by a contrast ratio of 380:1, corresponding to a dynamic polarization rotation of 18°, and a pulse-width-limited full width at half maximum of 165 fs. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes

Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx

P. Chavarkar, U. K. Mishra, S. K. Mathis, and J. S. Speck

Appl. Phys. Lett. 76, 1291 (2000); http://dx.doi.org/10.1063/1.126012 (3 pages) | Cited 4 times

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We demonstrate the effect of antimony (Sb) composition on the oxidation mechanism of AlAs1−xSbx (x<0.21) layers on GaAs substrates. It has been demonstrated that addition of a group-III element like Ga to AlAs slows the rate of oxidation. In contrast, addition of a group-V element like Sb to AlAs changes the oxidation mechanism in more than one way. The oxidation rate increases with Sb addition, and the oxidation reaction changes from a diffusion-limited mechanism to a reaction-rate-limited mechanism at higher oxidation temperatures. This is attributed to the increase in the permeability of the oxide. Nonuniform segregation of Sb is observed upon oxidation. The activation energy of the oxidation reaction-rate constant initially decreases with the Sb composition upto 10%, further Sb addition increases the activation energy. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Mq Oxidation
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation

Temperature dependence of dislocation photoresponse in relaxed GeSi films

Matthew H. Gray and J. W. P. Hsu

Appl. Phys. Lett. 76, 1294 (2000); http://dx.doi.org/10.1063/1.126013 (3 pages) | Cited 4 times

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Using a near-field scanning optical microscope to perform local photocurrent measurements, we examine the temperature dependence of contrast associated with individual threading dislocations and crosshatch patterns from 12 to 300 K. The observed weak contrast at room temperature and a negative temperature coefficient indicate that the predominant electrical activity comes from shallow centers. This is consistent with intrinsic defects or at most low levels ( ∼ ppb) of contaminants. In addition, the crosshatch contrast displays a long-range variation below 100 K. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Ht Other nonmetals

Potential profile between boron-doped diamond electron emitter and anode electrode

Takatoshi Yamada, Atsuhito Sawabe, Satoshi Koizumi, Junji Itoh, and Ken Okano

Appl. Phys. Lett. 76, 1297 (2000); http://dx.doi.org/10.1063/1.126014 (3 pages) | Cited 13 times

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The voltage drop of vacuum and boron (B)-doped diamond electron emitter bulk has been discussed in order to understand the electron emission mechanism of B-doped diamond. It is confirmed that the electron emission from B-doped diamond depends on its film thickness and the localized electron pass/channel is formed in the film. From the results of the threshold voltage versus anode-diamond spacing characteristics, it is found that most of the anode voltage is applied in vacuum, and the high electric field near the B-doped diamond surface is required for the electron emission from B-doped diamond regardless of the film thickness. © 2000 American Institute of Physics.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Cw Elemental semiconductors

Fabrication of n-type 4H–SiC/Ni junctions using electrochemical deposition

G. Oskam, P. C. Searson, and M. W. Cole

Appl. Phys. Lett. 76, 1300 (2000); http://dx.doi.org/10.1063/1.126015 (3 pages) | Cited 5 times

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We report on the electrochemical deposition of nickel films on n-type 4H–SiC. High quality nickel films were prepared by a double potential pulse method. The as-deposited n-SiC/Ni junctions were rectifying with a barrier height of about 1.8 eV. The contact was converted to an ohmic junction by annealing at 950 °C in a 10% H2/N2 atmosphere. © 2000 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Pq Electrodeposition, electroplating
61.72.Cc Kinetics of defect formation and annealing
73.20.-r Electron states at surfaces and interfaces
73.40.Ei Rectification

Ga Ohmic contact for n-type diamond by ion implantation

T. Teraji, S. Koizumi, and H. Kanda

Appl. Phys. Lett. 76, 1303 (2000); http://dx.doi.org/10.1063/1.126016 (3 pages) | Cited 5 times

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Electric contacts formed on an n-type diamond film by means of the Ga ion implantation were studied. The implanted Ga contacts revealed Ohmic property at room temperature. Contact resistivity for the implanted Ga contacts formed on the diamond film with donor density of 3×1018 cm−3 was 4.8×106 Ω cm2. The value is more than one order smaller than that for conventional vacuum-deposited metal contacts on the same diamond film. This contact has enabled us to measure electric properties for relatively lightly doped n-type diamond films in a temperature range between room temperature and 600 °C. © 2000 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
73.40.Cg Contact resistance, contact potential
61.82.Fk Semiconductors

Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

S. Marcinkevičius, C. Jagadish, H. H. Tan, M. Kaminska, K. Korona, R. Adomavičius, and A. Krotkus

Appl. Phys. Lett. 76, 1306 (2000); http://dx.doi.org/10.1063/1.126017 (3 pages) | Cited 12 times

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Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500–700 °C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
61.72.uj III-V and II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.Cc Kinetics of defect formation and annealing

Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Yongsheng Gui, Shaoling Guo, Guozhen Zheng, Junhao Chu, Xiaohua Fang, Kai Qiu, and Xingwu Wang

Appl. Phys. Lett. 76, 1309 (2000); http://dx.doi.org/10.1063/1.126018 (3 pages) | Cited 7 times

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Variable magnetic-field Hall measurement has been used to investigate the transport properties in the double-heterostructure pseudomorphic high-electron-mobility transistor in the temperature range from 1.6 to 240 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov–de Haas measurements and the hybrid MS+MCF approach agree well with the theoretical calculations. The resulting temperature dependence of mobility and concentration for ground subbands and excited subbands shows that the excited subbands play an important role in the observed transport behavior. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
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