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13 Mar 2000

Volume 76, Issue 11, pp. 1353-1479

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Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots

K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano

Appl. Phys. Lett. 76, 1464 (2000); http://dx.doi.org/10.1063/1.126065 (3 pages) | Cited 24 times

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This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature. © 2000 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Spin-dependent capacitance of silicon field-effect transistors

M. S. Brandt, R. T. Neuberger, and M. Stutzmann

Appl. Phys. Lett. 76, 1467 (2000); http://dx.doi.org/10.1063/1.126066 (3 pages) | Cited 3 times

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Under electron spin resonance conditions, changes of the capacitance of vertical field-effect transistors are observed, due to spin-dependent trapping of charge carriers by defects at the interface between the substrate and the channel region. The spectra obtained by capacitively detected magnetic resonance show the presence of two different defects, tentatively assigned to defects introduced by processing and complexes involving transition-metal impurities. Using a quantitative model, the number of defects resonantly charged by this trapping is estimated. It is shown that the possible cross talk of spin-dependent changes of the conductivity in the substrate is, in fact, suppressed by the large impedance of the space-charge layer. © 2000 American Institute of Physics.
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73.61.Cw Elemental semiconductors
85.30.Tv Field effect devices
76.30.Mi Color centers and other defects

Atomic resolution on Si(111)-(7×7) by noncontact atomic force microscopy with a force sensor based on a quartz tuning fork

Franz J. Giessibl

Appl. Phys. Lett. 76, 1470 (2000); http://dx.doi.org/10.1063/1.126067 (3 pages) | Cited 142 times

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Atomic resolution by noncontact atomic force microscopy with a self-sensing piezoelectric force sensor is presented. The sensor has a stiffness of 1800 N/m and is operated with sub-nanometer amplitudes, allowing atomic resolution with relatively bluntly etched tungsten tips. Sensitivity and noise are discussed. © 2000 American Institute of Physics.
Show PACS
07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.10.Pz Instruments for strain, force, and torque
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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